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Cho, E. and Seo, S. and Jin, C. and Pavlidis, D. and Fu, G. and Tuerck, J. and Jaegermann, W. (2009):
Impact of in situ SiNx layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures.
In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, pp. 2079-2083, 27, (5), ISSN 10711023,
[Online-Edition: http://dx.doi.org/10.1116/1.3186615],
[Article]

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