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Cho, E. ; Seo, S. ; Jin, C. ; Pavlidis, D. ; Fu, G. ; Tuerck, J. ; Jaegermann, W. (2009):
Impact of in situ SiNx layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures.
In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 27 (5), pp. 2079-2083. ISSN 10711023,

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