2010

Alaei, H. R. ; Eshghi, H. ; Riedel, R. ; Pavlidis, D. (2010)
Thermal Stress and Strain in a GaN Epitaxial Layer Grown on a Sapphire Substrate by the MOCVD Method.
In: Chinese Journal of Physics, 48 (3)
Artikel, Bibliographie

2009

Cho, E. ; Seo, S. ; Jin, C. ; Pavlidis, D. ; Fu, G. ; Tuerck, J. ; Jaegermann, W. (2009)
Impact of in situ SiNx layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures.
In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 27 (5)
doi: 10.1116/1.3186615
Artikel, Bibliographie

2006

Valizadeh, P. ; Alekseev, E. ; Pavlidis, D. ; Yun, F. ; Morkoc, H. (2006)
Anomalous effects of temperature and UV illumination on the operation of AlGaN/GaN MODFET.
In: Solid State Electronics, 50
Artikel, Bibliographie

Evtukh, A. ; Litovchenko, V. ; Semenenko, M. ; Yilmazoglu, O. ; Mutamba, K. ; Hartnagel, H. ; Pavlidis, D. (2006)
Formation of conducting nanochannels in diamond-like carbon films.
In: Semiconductor Science and Technology, 21
Artikel, Bibliographie

2005

Valizadeh, P. ; Pavlidis, D. (2005)
Effects of RF and DC stress on AlGaN/GaN MODFETs : a low-frequency noise based investigation.
In: IEEE Transactions on Materials and Device Reliability, 5
Artikel, Bibliographie

Zhu, X. ; Wang, J. ; Pavlidis, D. (2005)
First demonstration of basic- and Darlington-Coupled monolithic transimpedance amplifiers using InP/GaAsSb/InP DHBTs.
Konferenzveröffentlichung, Bibliographie

Litovchenko, V. ; Evtukh, A. ; Yilmazoglu, O. ; Mutamba, K. ; Hartnagel, H. L. ; Pavlidis, D. (2005)
Gunn effect in field-emission phenomena.
In: Journal of Applied Physics, 97
Artikel, Bibliographie

Zhao, G. ; Hubbard, S. M. ; Pavlidis, D. (2005)
High quality AlN grown by organometallic vapor phase epitaxy (OMVPE).
Konferenzveröffentlichung, Bibliographie

Hubbard, S. M. ; Zhao, G. ; Pavlidis, D. ; Sutton, W. ; Cho, E. (2005)
High resistivity GaN Buffer templates and their optimization for GaN-Based HFETs.
In: Journal of Crystal Growth, 284
Artikel, Bibliographie

Zhu, X. ; Wang, J. ; Pavlidis, D. (2005)
InP/GaAsSb/InP DHBT monolithic transimpedance amplifier with large dynamic range.
Konferenzveröffentlichung, Bibliographie

Valizadeh, P. ; Pavlidis, D. (2005)
Investigation of the impact of Al mole-fraction on the consequences of RF stress on AlxGa1-xN/GaN MODFETs.
In: IEEE Transactions on Electron Devices, 52
Artikel, Bibliographie

Valizadeh, P. ; Pavlidis, D. ; Shiojima, K. ; Makimura, T. ; Shigekawa, N. (2005)
Low frequency noise of AlGaN/GaN MODFETs : a comparative study of surface, barrier and heterointerface effects.
In: Solid State Electronics, 49
Artikel, Bibliographie

Wang, J. ; Zhu, X. ; Pavlidis, D. ; Hsu, Shawn (2005)
Monolithic transimpedance amplifiers for low-power/low-noise and maximum bandwidth using InP/GaAsSb/InP DHBTs.
Konferenzveröffentlichung, Bibliographie

Mutamba, K. ; Yilmazoglu, O. ; Sydlo, C. ; Pavlidis, D. ; Mir, S. ; Hubbard, S. ; Zhao, G. ; Daumiller, I. (2005)
Technology and characteristics of GaN-based diodes for high-field operation.
Konferenzveröffentlichung, Bibliographie

Seo, S. ; Pavlidis, D. ; Moon, J. S. (2005)
Wideband balanced AlGaN/GaN HEMT MMIC low noise amplifier.
In: Electronic Letters, 41
Artikel, Bibliographie

Seo, S. ; Pavlidis, D. ; Moon, J.-S. (2005)
Wideband balanced AlGaN/GaN HEMT MMIC low noise amplifier for transceiver front-ends.
Konferenzveröffentlichung, Bibliographie

2000

Tiginyanu, I. ; Kravetsky, I. ; Pavlidis, D. ; Eisenbach, A. ; Hildebrandt, R. ; Marowsky, G. ; Hartnagel, H. L. (2000)
Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire.
In: MRS Internet journal nitride semiconductor research. 5S1, W11.52 (2000)
Artikel, Bibliographie

Kravetsky, V. ; Tiginyanu, I. M. ; Hildebrandt, R. ; Marowsky, G. ; Pavlidis, D. ; Eisenbach, A. ; Hartnagel, H. L. (2000)
Nonlinear optical response of GaN layers on sapphire: the impact of fundamental beam interference.
In: Applied physics letters, 76
Artikel, Bibliographie

1997

Tiginyanu, I. ; Pavlidis, D. ; Cao, J. ; Eisenbach, A. ; Ichizli, Victoria M. ; Hartnagel, Hans L. ; Anedda, A. ; Corpino, R. (1997)
Time-resolved photoluminescence characterisation of GaN layers grown by metalorganic chemical vapor deposition.
Konferenzveröffentlichung, Bibliographie