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Sharbafi, M. A. ; Rode, C. ; Kurowski, Stefan ; Scholz, Dorian ; Möckel, R. ; Radkhah, Katayon ; Zhao, G. ; Rashty, A.M. ; von Stryk, Oskar ; Seyfarth, A. :
A new biarticular actuator design facilitates control of leg function in BioBiped3.
[Online-Edition: http://iopscience.iop.org/article/10.1088/1748-3190/11/4/046...]
In: Bioinspiration & Biomimetics, 11 (4) 046003.
[Artikel] , (2016)

Mutamba, Kabula ; Yilmazoglu, Oktay ; Sydlo, Cezary ; Mir, Mostafa ; Hubbard, Seth ; Zhao, G. ; Daumiller, Ingo ; Pavlidis, Dimitris :
Technology aspects of GaN-based diodes for high-field operation.
In: Superlatices and Microstructures, 40 pp. 363-368.
[Artikel] , (2006)

Zhao, G. ; Hubbard, S. M. ; Pavlidis, D. :
High quality AlN grown by organometallic vapor phase epitaxy (OMVPE).
In: Proceedings of WOCSDICE '05 : Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe <29, 2005, Cardiff, UK>, 2005, S. 83-84 .
[Konferenz- oder Workshop-Beitrag] , (2005)

Hubbard, S. M. ; Zhao, G. ; Pavlidis, D. ; Sutton, W. ; Cho, E. :
High resistivity GaN Buffer templates and their optimization for GaN-Based HFETs.
In: Journal of Crystal Growth, 284 pp. 297-305.
[Artikel] , (2005)

Mutamba, K. ; Yilmazoglu, O. ; Sydlo, C. ; Pavlidis, D. ; Mir, S. ; Hubbard, S. ; Zhao, G. ; Daumiller, I. :
Technology and characteristics of GaN-based diodes for high-field operation.
In: Proceedings of WOCSDICE ' 05 : Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe <29, 2005,Cardiff, UK>, 2005, S.111 - 112 .
[Konferenz- oder Workshop-Beitrag] , (2005)

Zhu, X. ; Pavlidis, Dimitris ; Zhao, G. ; Han, B.-K. ; Wibowo, A. ; Pan, N. :
First power demonstration of InP/GaAsSb/InP double HBTs.
In: Conference proceedings / 2004 International Conference Indium Phosphide and Related Materials, 16th IPRM : May 31 (Mon.) - June 4 (Fri.), 2004, Kagoshima Shimin Bunka Hall, Kagoshima, Jaoan / sponsored by the Japan Society of Applied Physics, IEEE Lasers . IEEE Operations Center , Piscataway, NJ
[Konferenz- oder Workshop-Beitrag] , (2004)

Hubbard, S. M. ; Zhao, G. ; Pavlidis, Dimitris ; Cho, E. ; Sutton, W. :
Optimization of GaN channel conductivity in AlGaN/GaN HFET structures grown by MOVPE.
In: Materials Research Society Fall Meeting, Boston, Mass., November 29-December 3, 2004, proceedings.- Paper E11.11 .
[Konferenz- oder Workshop-Beitrag] , (2004)

Zhao, G. ; Hubbard, S. M. ; Pavlidis, Dimitris :
Yellow luminescence centers of GaN.
In: Japanese journal of applied physics, Vol. 4 pp. 2471-2472.
[Artikel] , (2004)

Zhu, X. ; Pavlidis, Dimitris ; Zhao, G. :
First high-frequency amd power demonstration of InGaAlAs/GaAsSb/InP double HBTs.
In: International Conference on Indium Phosphide and Related Materials <2003, Santa Barbara, Calif.>: Proceedings ...- Piscataway, NJ: IEEE Service Center, 2003.- 578 S.- ISBN 0-7803-7704-4.- S. 149-152 . IEEE Service Center , Piscataway, NJ
[Konferenz- oder Workshop-Beitrag] , (2003)

Zhu, X. ; Pavlidis, Dimitris ; Zhao, G. ; Bove, P. ; Lahrèche, H. ; Langer, R. :
First microwave characteristics of InGaAlAs/GaAsSb/InP double HBTs.
In: IEICE transactions on electronics / E / C, Vol. 8 pp. 2010-2014.
[Artikel] , (2003)

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