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Number of items: 10.

Sharbafi, M. A. and Rode, C. and Kurowski, Stefan and Scholz, Dorian and Möckel, R. and Radkhah, Katayon and Zhao, G. and Rashty, A.M. and Stryk, Oskar von and Seyfarth, A. (2016):
A new biarticular actuator design facilitates control of leg function in BioBiped3.
In: Bioinspiration & Biomimetics, pp. 046003, 11, (4), DOI: 10.1088/1748-3190/11/4/046003,
[Online-Edition: http://iopscience.iop.org/article/10.1088/1748-3190/11/4/046...],
[Article]

Mutamba, Kabula and Yilmazoglu, Oktay and Sydlo, Cezary and Mir, Mostafa and Hubbard, Seth and Zhao, G. and Daumiller, Ingo and Pavlidis, Dimitris (2006):
Technology aspects of GaN-based diodes for high-field operation.
In: Superlatices and Microstructures, pp. 363-368, 40, [Article]

Zhao, G. and Hubbard, S. M. and Pavlidis, D. (2005):
High quality AlN grown by organometallic vapor phase epitaxy (OMVPE).
In: Proceedings of WOCSDICE '05 : Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe <29, 2005, Cardiff, UK>, 2005, S. 83-84, [Conference or Workshop Item]

Hubbard, S. M. and Zhao, G. and Pavlidis, D. and Sutton, W. and Cho, E. (2005):
High resistivity GaN Buffer templates and their optimization for GaN-Based HFETs.
In: Journal of Crystal Growth, pp. 297-305, 284, [Article]

Mutamba, K. and Yilmazoglu, O. and Sydlo, C. and Pavlidis, D. and Mir, S. and Hubbard, S. and Zhao, G. and Daumiller, I. (2005):
Technology and characteristics of GaN-based diodes for high-field operation.
In: Proceedings of WOCSDICE ' 05 : Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe <29, 2005,Cardiff, UK>, 2005, S.111 - 112, [Conference or Workshop Item]

Zhu, X. and Pavlidis, Dimitris and Zhao, G. and Han, B.-K. and Wibowo, A. and Pan, N. (2004):
First power demonstration of InP/GaAsSb/InP double HBTs.
Piscataway, NJ, IEEE Operations Center, In: Conference proceedings / 2004 International Conference Indium Phosphide and Related Materials, 16th IPRM : May 31 (Mon.) - June 4 (Fri.), 2004, Kagoshima Shimin Bunka Hall, Kagoshima, Jaoan / sponsored by the Japan Society of Applied Physics, IEEE Lasers, [Conference or Workshop Item]

Hubbard, S. M. and Zhao, G. and Pavlidis, Dimitris and Cho, E. and Sutton, W. (2004):
Optimization of GaN channel conductivity in AlGaN/GaN HFET structures grown by MOVPE.
In: Materials Research Society Fall Meeting, Boston, Mass., November 29-December 3, 2004, proceedings.- Paper E11.11, [Conference or Workshop Item]

Zhao, G. and Hubbard, S. M. and Pavlidis, Dimitris (2004):
Yellow luminescence centers of GaN.
In: Japanese journal of applied physics, pp. 2471-2472, Vol. 4, [Article]

Zhu, X. and Pavlidis, Dimitris and Zhao, G. (2003):
First high-frequency amd power demonstration of InGaAlAs/GaAsSb/InP double HBTs.
Piscataway, NJ, IEEE Service Center, In: International Conference on Indium Phosphide and Related Materials <2003, Santa Barbara, Calif.>: Proceedings ...- Piscataway, NJ: IEEE Service Center, 2003.- 578 S.- ISBN 0-7803-7704-4.- S. 149-152, [Conference or Workshop Item]

Zhu, X. and Pavlidis, Dimitris and Zhao, G. and Bove, P. and Lahrèche, H. and Langer, R. (2003):
First microwave characteristics of InGaAlAs/GaAsSb/InP double HBTs.
In: IEICE transactions on electronics / E / C, pp. 2010-2014, Vol. 8, [Article]

This list was generated on Sat Jul 20 00:33:52 2019 CEST.