Alaei, H. R. and Riedel, Ralf and Younesi, M. (2014):
Intersubband transitions under strong screening effect of five carriers in the step doped InGaN/GaN Quantum Well.
In: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 16 (1-2), pp. 25-30. NATL INST OPTOELECTRONICS, 1 ATOMISTILOR ST, PO BOX MG-5, BUCHAREST-MAGURELE 76900, ROMANIA, ISSN 1454-4164,
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Alaei, H. R. and Eshghi, H. and Riedel, R. and Pavlidis, D. (2010):
Thermal Stress and Strain in a GaN Epitaxial Layer Grown on a Sapphire Substrate by the MOCVD Method.
In: Chinese Journal of Physics, 48 (3), pp. 400-407. [Article]