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Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire

Tiginyanu, I. and Kravetsky, I. and Pavlidis, D. and Eisenbach, A. and Hildebrandt, R. and Marowsky, G. and Hartnagel, H. L. (2000):
Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire.
In: MRS Internet journal nitride semiconductor research. 5S1, W11.52 (2000), [Article]

Item Type: Article
Erschienen: 2000
Creators: Tiginyanu, I. and Kravetsky, I. and Pavlidis, D. and Eisenbach, A. and Hildebrandt, R. and Marowsky, G. and Hartnagel, H. L.
Title: Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire
Language: English
Journal or Publication Title: MRS Internet journal nitride semiconductor research. 5S1, W11.52 (2000)
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 19 Nov 2008 16:25
License: [undefiniert]
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