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Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire

Tiginyanu, I. ; Kravetsky, I. ; Pavlidis, D. ; Eisenbach, A. ; Hildebrandt, R. ; Marowsky, G. ; Hartnagel, H. L. (2000):
Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire.
In: MRS Internet journal nitride semiconductor research. 5S1, W11.52 (2000), [Article]

Item Type: Article
Erschienen: 2000
Creators: Tiginyanu, I. ; Kravetsky, I. ; Pavlidis, D. ; Eisenbach, A. ; Hildebrandt, R. ; Marowsky, G. ; Hartnagel, H. L.
Title: Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire
Language: English
Journal or Publication Title: MRS Internet journal nitride semiconductor research. 5S1, W11.52 (2000)
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 19 Nov 2008 16:25
License: [undefiniert]
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