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Zhao, G. ; Hubbard, S. M. ; Pavlidis, D. :
High quality AlN grown by organometallic vapor phase epitaxy (OMVPE).
In: Proceedings of WOCSDICE '05 : Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe <29, 2005, Cardiff, UK>, 2005, S. 83-84 .
[Konferenz- oder Workshop-Beitrag] , (2005)

Hubbard, S. M. ; Zhao, G. ; Pavlidis, D. ; Sutton, W. ; Cho, E. :
High resistivity GaN Buffer templates and their optimization for GaN-Based HFETs.
In: Journal of Crystal Growth, 284 S. 297-305.
[Artikel] , (2005)

Hubbard, S. M. ; Zhao, G. ; Pavlidis, Dimitris ; Cho, E. ; Sutton, W. :
Optimization of GaN channel conductivity in AlGaN/GaN HFET structures grown by MOVPE.
In: Materials Research Society Fall Meeting, Boston, Mass., November 29-December 3, 2004, proceedings.- Paper E11.11 .
[Konferenz- oder Workshop-Beitrag] , (2004)

Zhao, G. ; Hubbard, S. M. ; Pavlidis, Dimitris :
Yellow luminescence centers of GaN.
In: Japanese journal of applied physics, Vol. 4 S. 2471-2472.
[Artikel] , (2004)

Pavlidis, Dimitris ; Hubbard, S. M. ; Hsu, S. S. H. ; Seo, S. :
AlGaN/GaN and AlN/GaN heterostructure devices : a possible device technology for high RF power wireless transmission.
In: JUSPS, Japan-United States Joint Workshop on Space Solar Power System <2003, Kyoto>: Proceedings ... .
[Konferenz- oder Workshop-Beitrag] , (2003)

Yilmazoglu, Oktay ; Pavlidis, Dimitris ; Litvin, Yu. M. ; Hubbard, S. M. ; Tiginyanu, I. M. ; Mutamba, Kabula ; Hartnagel, Hans L. ; Litovchenko, V. G. ; Evtukh, A. A. :
Field emission from quantum size GaN structures.
In: Applied surface science, Vol. 2 S. 46-50.
[Artikel] , (2003)

Syrbu, N. N. ; Tiginyanu, I. M. ; Ursaki, V. V. ; Zalamai, V. V. ; Popa, V. ; Hubbard, S. M. ; Pavlidis, Dimitris :
Free excitons in strained MOCVD-grown GaN layers.
In: MRS internet journal of nitride semiconductor research, Vol. 8 S. 1-5.
[Artikel] , (2003)

Tiginyanu, I. M. ; Ursaki, V. V. ; Zalamai, V. V. ; Langa, S. ; Hubbard, S. M. ; Pavlidis, Dimitris ; Föll, H. :
Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching.
In: Applied physics letters, Vol. 8 S. 1551-1553.
[Artikel] , (2003)

Ursaki, V. V. ; Tiginyanu, I. M. ; Zalamai, V. V. ; Hubbard, S. M. ; Pavlidis, Dimitris :
Optical characterization of AlN/GaN heterostructure.
In: Journal of applied physics, Vol. 9 S. 4813-481.
[Artikel] , (2003)

Ursaki, V. V. ; Tiginyanu, I. M. ; Ricci, P. C. ; Anedda, A. ; Hubbard, S. M. ; Pavlidis, Dimitris :
Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation.
In: Journal of applied physics, Vol. 9 S. 3875-388.
[Artikel] , (2003)

Ursaki, V. V. ; Tiginyanu, I. M. ; Syrbu, N. N. ; Zalamai, V. V. ; Hubbard, S. M. ; Pavlidis, Dimitris :
Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures.
In: Semiconductor science and technology, 18 L9-L11.
[Artikel] , (2003)

Zhao, G. Y. ; Sutton, W. ; Pavlidis, Dimitris ; Piner, E. ; Schwank, J. W. ; Hubbard, S. M. :
A novel Pt-AlGaN/GaN heterostructure Schottky diode gas sensor on Si.
In: IEICE transactions on electronics / E / C, Vol. 8 S. 2027-2031.
[Artikel] , (2003)

Yilmazoglu, Oktay ; Pavlidis, Dimitris ; Litvin, Yu. M. ; Hubbard, S. M. ; Tiginyanu, I. ; Mutamba, Kabula ; Hartnagel, Hans L. ; Litovchenko, V. G. ; Evtukh, A. A. :
Field emission from quantum size GaN whiskers.
In: International Vacuum Microelectronics Conference <15, 2002, Lyon>: Proceedings ... IVMC 2002.- Lyon, 2002.- QB3.07 .
[Konferenz- oder Workshop-Beitrag] , (2002)

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