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Number of items: 13.

Zhao, G. and Hubbard, S. M. and Pavlidis, D. (2005):
High quality AlN grown by organometallic vapor phase epitaxy (OMVPE).
In: Proceedings of WOCSDICE '05 : Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe <29, 2005, Cardiff, UK>, 2005, S. 83-84, [Conference or Workshop Item]

Hubbard, S. M. and Zhao, G. and Pavlidis, D. and Sutton, W. and Cho, E. (2005):
High resistivity GaN Buffer templates and their optimization for GaN-Based HFETs.
In: Journal of Crystal Growth, pp. 297-305, 284, [Article]

Hubbard, S. M. and Zhao, G. and Pavlidis, Dimitris and Cho, E. and Sutton, W. (2004):
Optimization of GaN channel conductivity in AlGaN/GaN HFET structures grown by MOVPE.
In: Materials Research Society Fall Meeting, Boston, Mass., November 29-December 3, 2004, proceedings.- Paper E11.11, [Conference or Workshop Item]

Zhao, G. and Hubbard, S. M. and Pavlidis, Dimitris (2004):
Yellow luminescence centers of GaN.
In: Japanese journal of applied physics, pp. 2471-2472, Vol. 4, [Article]

Pavlidis, Dimitris and Hubbard, S. M. and Hsu, S. S. H. and Seo, S. (2003):
AlGaN/GaN and AlN/GaN heterostructure devices : a possible device technology for high RF power wireless transmission.
In: JUSPS, Japan-United States Joint Workshop on Space Solar Power System <2003, Kyoto>: Proceedings ..., [Conference or Workshop Item]

Yilmazoglu, Oktay and Pavlidis, Dimitris and Litvin, Yu. M. and Hubbard, S. M. and Tiginyanu, I. M. and Mutamba, Kabula and Hartnagel, Hans L. and Litovchenko, V. G. and Evtukh, A. A. (2003):
Field emission from quantum size GaN structures.
In: Applied surface science, pp. 46-50, Vol. 2, [Article]

Syrbu, N. N. and Tiginyanu, I. M. and Ursaki, V. V. and Zalamai, V. V. and Popa, V. and Hubbard, S. M. and Pavlidis, Dimitris (2003):
Free excitons in strained MOCVD-grown GaN layers.
In: MRS internet journal of nitride semiconductor research, pp. 1-5, Vol. 8, [Article]

Tiginyanu, I. M. and Ursaki, V. V. and Zalamai, V. V. and Langa, S. and Hubbard, S. M. and Pavlidis, Dimitris and Föll, H. (2003):
Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching.
In: Applied physics letters, pp. 1551-1553, Vol. 8, [Article]

Ursaki, V. V. and Tiginyanu, I. M. and Zalamai, V. V. and Hubbard, S. M. and Pavlidis, Dimitris (2003):
Optical characterization of AlN/GaN heterostructure.
In: Journal of applied physics, pp. 4813-481, Vol. 9, [Article]

Ursaki, V. V. and Tiginyanu, I. M. and Ricci, P. C. and Anedda, A. and Hubbard, S. M. and Pavlidis, Dimitris (2003):
Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation.
In: Journal of applied physics, pp. 3875-388, Vol. 9, [Article]

Ursaki, V. V. and Tiginyanu, I. M. and Syrbu, N. N. and Zalamai, V. V. and Hubbard, S. M. and Pavlidis, Dimitris (2003):
Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures.
In: Semiconductor science and technology, pp. L9-L11, 18, [Article]

Zhao, G. Y. and Sutton, W. and Pavlidis, Dimitris and Piner, E. and Schwank, J. W. and Hubbard, S. M. (2003):
A novel Pt-AlGaN/GaN heterostructure Schottky diode gas sensor on Si.
In: IEICE transactions on electronics / E / C, pp. 2027-2031, Vol. 8, [Article]

Yilmazoglu, Oktay and Pavlidis, Dimitris and Litvin, Yu. M. and Hubbard, S. M. and Tiginyanu, I. and Mutamba, Kabula and Hartnagel, Hans L. and Litovchenko, V. G. and Evtukh, A. A. (2002):
Field emission from quantum size GaN whiskers.
In: International Vacuum Microelectronics Conference <15, 2002, Lyon>: Proceedings ... IVMC 2002.- Lyon, 2002.- QB3.07, [Conference or Workshop Item]

This list was generated on Tue Jul 23 01:29:47 2019 CEST.