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Number of items: 19.

Alaei, H. R. and Eshghi, H. and Riedel, R. and Pavlidis, D. :
Thermal Stress and Strain in a GaN Epitaxial Layer Grown on a Sapphire Substrate by the MOCVD Method.
In: Chinese Journal of Physics, 48 (3) pp. 400-407.
[Article] , (2010)

Cho, E. and Seo, S. and Jin, C. and Pavlidis, D. and Fu, G. and Tuerck, J. and Jaegermann, W. :
Impact of in situ SiNx layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures.
[Online-Edition: http://dx.doi.org/10.1116/1.3186615]
In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 27 (5) pp. 2079-2083. ISSN 10711023
[Article] , (2009)

Valizadeh, P. and Alekseev, E. and Pavlidis, D. and Yun, F. and Morkoc, H. :
Anomalous effects of temperature and UV illumination on the operation of AlGaN/GaN MODFET.
In: Solid State Electronics, 50 pp. 282-286.
[Article] , (2006)

Evtukh, A. and Litovchenko, V. and Semenenko, M. and Yilmazoglu, O. and Mutamba, K. and Hartnagel, H. and Pavlidis, D. :
Formation of conducting nanochannels in diamond-like carbon films.
In: Semiconductor Science and Technology, 21 pp. 1326-1330.
[Article] , (2006)

Valizadeh, P. and Pavlidis, D. :
Effects of RF and DC stress on AlGaN/GaN MODFETs : a low-frequency noise based investigation.
In: IEEE Transactions on Materials and Device Reliability, 5 pp. 555-563.
[Article] , (2005)

Zhu, X. and Wang, J. and Pavlidis, D. :
First demonstration of basic- and Darlington-Coupled monolithic transimpedance amplifiers using InP/GaAsSb/InP DHBTs.
In: Microwave symposium digest 2005 IEEE MTT-S International of the IEEE International Microwave Symposium <2005,12-17 June, Long Beach, CA>, 2005, S. 101-104 .
[Conference or Workshop Item] , (2005)

Litovchenko, V. and Evtukh, A. and Yilmazoglu, O. and Mutamba, K. and Hartnagel, H. L. and Pavlidis, D. :
Gunn effect in field-emission phenomena.
In: Journal of Applied Physics, 97 044911-1.
[Article] , (2005)

Zhao, G. and Hubbard, S. M. and Pavlidis, D. :
High quality AlN grown by organometallic vapor phase epitaxy (OMVPE).
In: Proceedings of WOCSDICE '05 : Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe <29, 2005, Cardiff, UK>, 2005, S. 83-84 .
[Conference or Workshop Item] , (2005)

Hubbard, S. M. and Zhao, G. and Pavlidis, D. and Sutton, W. and Cho, E. :
High resistivity GaN Buffer templates and their optimization for GaN-Based HFETs.
In: Journal of Crystal Growth, 284 pp. 297-305.
[Article] , (2005)

Zhu, X. and Wang, J. and Pavlidis, D. :
InP/GaAsSb/InP DHBT monolithic transimpedance amplifier with large dynamic range.
In: Conference proceedings / European Microwave Week 2005 : 3 - 7 October 2005, CNIT la Défense, Paris, France; [comprises the] 35th European Microwave Conference 2005 ; The European Conference on Wireless Technology 2005 ; European Radar Conference 2005 ; G . Horizon House Publ , [Elektronische Ressource]. - London
[Conference or Workshop Item] , (2005)

Valizadeh, P. and Pavlidis, D. :
Investigation of the impact of Al mole-fraction on the consequences of RF stress on AlxGa1-xN/GaN MODFETs.
In: IEEE Transactions on Electron Devices, 52 pp. 1933-1939.
[Article] , (2005)

Valizadeh, P. and Pavlidis, D. and Shiojima, K. and Makimura, T. and Shigekawa, N. :
Low frequency noise of AlGaN/GaN MODFETs : a comparative study of surface, barrier and heterointerface effects.
In: Solid State Electronics, 49 pp. 1352-1360.
[Article] , (2005)

Wang, J. and Zhu, X. and Pavlidis, D. and Hsu, Shawn :
Monolithic transimpedance amplifiers for low-power/low-noise and maximum bandwidth using InP/GaAsSb/InP DHBTs.
In: Proceedings of WOCSDICE '05 : Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe <29, 2005, Cardiff, UK>, 2005, S. 69-70 .
[Conference or Workshop Item] , (2005)

Mutamba, K. and Yilmazoglu, O. and Sydlo, C. and Pavlidis, D. and Mir, S. and Hubbard, S. and Zhao, G. and Daumiller, I. :
Technology and characteristics of GaN-based diodes for high-field operation.
In: Proceedings of WOCSDICE ' 05 : Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe <29, 2005,Cardiff, UK>, 2005, S.111 - 112 .
[Conference or Workshop Item] , (2005)

Seo, S. and Pavlidis, D. and Moon, J. S. :
Wideband balanced AlGaN/GaN HEMT MMIC low noise amplifier.
In: Electronic Letters, 41 pp. 909-911.
[Article] , (2005)

Seo, S. and Pavlidis, D. and Moon, J.-S. :
Wideband balanced AlGaN/GaN HEMT MMIC low noise amplifier for transceiver front-ends.
In: Conference proceedings / European Microwave Week 2005 : 3 - 7 October 2005, CNIT la Défense, Paris, France; [comprises the] 35th European Microwave Conference 2005 ; The European Conference on Wireless Technology 2005 ; European Radar Conference 2005 ; G . Horizon House Publ , [Elektronische Ressource]. - London
[Conference or Workshop Item] , (2005)

Tiginyanu, I. and Kravetsky, I. and Pavlidis, D. and Eisenbach, A. and Hildebrandt, R. and Marowsky, G. and Hartnagel, H. L. :
Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire.
In: MRS Internet journal nitride semiconductor research. 5S1, W11.52 (2000)
[Article] , (2000)

Kravetsky, V. and Tiginyanu, I. M. and Hildebrandt, R. and Marowsky, G. and Pavlidis, D. and Eisenbach, A. and Hartnagel, H. L. :
Nonlinear optical response of GaN layers on sapphire: the impact of fundamental beam interference.
In: Applied physics letters, 76 S. 810-812.
[Article] , (2000)

Tiginyanu, I. and Pavlidis, D. and Cao, J. and Eisenbach, A. and Ichizli, Victoria M. and Hartnagel, Hans L. and Anedda, A. and Corpino, R. :
Time-resolved photoluminescence characterisation of GaN layers grown by metalorganic chemical vapor deposition.
In: Conference on Defect Recognition and Imaging Processing <7, 1997>: Proceedings .
[Conference or Workshop Item] , (1997)

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