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Alaei, H. R. ; Eshghi, H. ; Riedel, R. ; Pavlidis, D. :
Thermal Stress and Strain in a GaN Epitaxial Layer Grown on a Sapphire Substrate by the MOCVD Method.
In: Chinese Journal of Physics, 48 (3) S. 400-407.
[Artikel] , (2010)

Cho, E. ; Seo, S. ; Jin, C. ; Pavlidis, D. ; Fu, G. ; Tuerck, J. ; Jaegermann, W. :
Impact of in situ SiNx layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures.
[Online-Edition: http://dx.doi.org/10.1116/1.3186615]
In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 27 (5) S. 2079-2083. ISSN 10711023
[Artikel] , (2009)

Valizadeh, P. ; Alekseev, E. ; Pavlidis, D. ; Yun, F. ; Morkoc, H. :
Anomalous effects of temperature and UV illumination on the operation of AlGaN/GaN MODFET.
In: Solid State Electronics, 50 S. 282-286.
[Artikel] , (2006)

Evtukh, A. ; Litovchenko, V. ; Semenenko, M. ; Yilmazoglu, O. ; Mutamba, K. ; Hartnagel, H. ; Pavlidis, D. :
Formation of conducting nanochannels in diamond-like carbon films.
In: Semiconductor Science and Technology, 21 S. 1326-1330.
[Artikel] , (2006)

Valizadeh, P. ; Pavlidis, D. :
Effects of RF and DC stress on AlGaN/GaN MODFETs : a low-frequency noise based investigation.
In: IEEE Transactions on Materials and Device Reliability, 5 S. 555-563.
[Artikel] , (2005)

Zhu, X. ; Wang, J. ; Pavlidis, D. :
First demonstration of basic- and Darlington-Coupled monolithic transimpedance amplifiers using InP/GaAsSb/InP DHBTs.
In: Microwave symposium digest 2005 IEEE MTT-S International of the IEEE International Microwave Symposium <2005,12-17 June, Long Beach, CA>, 2005, S. 101-104 .
[ Konferenzveröffentlichung] , (2005)

Litovchenko, V. ; Evtukh, A. ; Yilmazoglu, O. ; Mutamba, K. ; Hartnagel, H. L. ; Pavlidis, D. :
Gunn effect in field-emission phenomena.
In: Journal of Applied Physics, 97 044911-1.
[Artikel] , (2005)

Zhao, G. ; Hubbard, S. M. ; Pavlidis, D. :
High quality AlN grown by organometallic vapor phase epitaxy (OMVPE).
In: Proceedings of WOCSDICE '05 : Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe <29, 2005, Cardiff, UK>, 2005, S. 83-84 .
[ Konferenzveröffentlichung] , (2005)

Hubbard, S. M. ; Zhao, G. ; Pavlidis, D. ; Sutton, W. ; Cho, E. :
High resistivity GaN Buffer templates and their optimization for GaN-Based HFETs.
In: Journal of Crystal Growth, 284 S. 297-305.
[Artikel] , (2005)

Zhu, X. ; Wang, J. ; Pavlidis, D. :
InP/GaAsSb/InP DHBT monolithic transimpedance amplifier with large dynamic range.
In: Conference proceedings / European Microwave Week 2005 : 3 - 7 October 2005, CNIT la Défense, Paris, France; [comprises the] 35th European Microwave Conference 2005 ; The European Conference on Wireless Technology 2005 ; European Radar Conference 2005 ; G . Horizon House Publ , [Elektronische Ressource]. - London
[ Konferenzveröffentlichung] , (2005)

Valizadeh, P. ; Pavlidis, D. :
Investigation of the impact of Al mole-fraction on the consequences of RF stress on AlxGa1-xN/GaN MODFETs.
In: IEEE Transactions on Electron Devices, 52 S. 1933-1939.
[Artikel] , (2005)

Valizadeh, P. ; Pavlidis, D. ; Shiojima, K. ; Makimura, T. ; Shigekawa, N. :
Low frequency noise of AlGaN/GaN MODFETs : a comparative study of surface, barrier and heterointerface effects.
In: Solid State Electronics, 49 S. 1352-1360.
[Artikel] , (2005)

Wang, J. ; Zhu, X. ; Pavlidis, D. ; Hsu, Shawn :
Monolithic transimpedance amplifiers for low-power/low-noise and maximum bandwidth using InP/GaAsSb/InP DHBTs.
In: Proceedings of WOCSDICE '05 : Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe <29, 2005, Cardiff, UK>, 2005, S. 69-70 .
[ Konferenzveröffentlichung] , (2005)

Mutamba, K. ; Yilmazoglu, O. ; Sydlo, C. ; Pavlidis, D. ; Mir, S. ; Hubbard, S. ; Zhao, G. ; Daumiller, I. :
Technology and characteristics of GaN-based diodes for high-field operation.
In: Proceedings of WOCSDICE ' 05 : Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe <29, 2005,Cardiff, UK>, 2005, S.111 - 112 .
[ Konferenzveröffentlichung] , (2005)

Seo, S. ; Pavlidis, D. ; Moon, J. S. :
Wideband balanced AlGaN/GaN HEMT MMIC low noise amplifier.
In: Electronic Letters, 41 S. 909-911.
[Artikel] , (2005)

Seo, S. ; Pavlidis, D. ; Moon, J.-S. :
Wideband balanced AlGaN/GaN HEMT MMIC low noise amplifier for transceiver front-ends.
In: Conference proceedings / European Microwave Week 2005 : 3 - 7 October 2005, CNIT la Défense, Paris, France; [comprises the] 35th European Microwave Conference 2005 ; The European Conference on Wireless Technology 2005 ; European Radar Conference 2005 ; G . Horizon House Publ , [Elektronische Ressource]. - London
[ Konferenzveröffentlichung] , (2005)

Tiginyanu, I. ; Kravetsky, I. ; Pavlidis, D. ; Eisenbach, A. ; Hildebrandt, R. ; Marowsky, G. ; Hartnagel, H. L. :
Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire.
In: MRS Internet journal nitride semiconductor research. 5S1, W11.52 (2000)
[Artikel] , (2000)

Kravetsky, V. ; Tiginyanu, I. M. ; Hildebrandt, R. ; Marowsky, G. ; Pavlidis, D. ; Eisenbach, A. ; Hartnagel, H. L. :
Nonlinear optical response of GaN layers on sapphire: the impact of fundamental beam interference.
In: Applied physics letters, 76 S. 810-812.
[Artikel] , (2000)

Tiginyanu, I. ; Pavlidis, D. ; Cao, J. ; Eisenbach, A. ; Ichizli, Victoria M. ; Hartnagel, Hans L. ; Anedda, A. ; Corpino, R. :
Time-resolved photoluminescence characterisation of GaN layers grown by metalorganic chemical vapor deposition.
In: Conference on Defect Recognition and Imaging Processing <7, 1997>: Proceedings .
[ Konferenzveröffentlichung] , (1997)

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