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Number of items: 4.

Tiginyanu, I. ; Kravetsky, I. ; Pavlidis, D. ; Eisenbach, A. ; Hildebrandt, R. ; Marowsky, G. ; Hartnagel, H. L. (2000):
Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire.
In: MRS Internet journal nitride semiconductor research. 5S1, W11.52 (2000), [Article]

Kravetsky, V. ; Tiginyanu, I. M. ; Hildebrandt, R. ; Marowsky, G. ; Pavlidis, D. ; Eisenbach, A. ; Hartnagel, H. L. (2000):
Nonlinear optical response of GaN layers on sapphire: the impact of fundamental beam interference.
76, In: Applied physics letters, pp. S. 810-812. [Article]

Tiginyanu, I. ; Pavlidis, D. ; Cao, J. ; Eisenbach, A. ; Ichizli, Victoria M. ; Hartnagel, Hans L. ; Anedda, A. ; Corpino, R. (1997):
Time-resolved photoluminescence characterisation of GaN layers grown by metalorganic chemical vapor deposition.
In: Conference on Defect Recognition and Imaging Processing <7, 1997>: Proceedings, [Conference or Workshop Item]

Kuphal, E. ; Mause, K. ; Miethe, K. ; Eisenbach, A. ; Fiedler, F. ; Corbet, A. (1995):
Electron diffusion length in InGaAs:Zn derived from heterostructure bipolar transistors.
In: Solid state electronics, 38 (4), pp. 795-799. Elsevier, e-ISSN 1879-2405,
DOI: 10.1016/0038-1101(94)00182-F,
[Article]

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