TU Darmstadt / ULB / TUbiblio

Thermal Stress and Strain in a GaN Epitaxial Layer Grown on a Sapphire Substrate by the MOCVD Method

Alaei, H. R. ; Eshghi, H. ; Riedel, R. ; Pavlidis, D. (2010)
Thermal Stress and Strain in a GaN Epitaxial Layer Grown on a Sapphire Substrate by the MOCVD Method.
In: Chinese Journal of Physics, 48 (3)
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

In this article we have studied the existence of stress and strain in a Si-doped GaN (2µm)/sapphire structure grown by the metal-organic chemical vapour deposition (MOCVD) method and tried to model the parameters. The presence of stress in our sample is supported by an E2 Raman shift mode (∆ω) of about 1.25 cm−1. To find the amount of biaxial basal plane stress we performed two techniques, XRD and film bending by a profilometer. The XRD technique confirmed that the GaN layer has a hexagonal structure with the lattice constants of c = 5.1825˚ A and a = 3.187˚ A. Our theoretical calculations show that this layer suffers a biaxial stress (σa) of about 0.175 ± 0.003 GPa. The profilometer data analysis also leads to a compatible value of 0.12 ± 0.04 GPa. These parameters altogether suggest the relation ∆ω = 7.1 ± 0.1σ cm−1/GPa for this layer.

Typ des Eintrags: Artikel
Erschienen: 2010
Autor(en): Alaei, H. R. ; Eshghi, H. ; Riedel, R. ; Pavlidis, D.
Art des Eintrags: Bibliographie
Titel: Thermal Stress and Strain in a GaN Epitaxial Layer Grown on a Sapphire Substrate by the MOCVD Method
Sprache: Englisch
Publikationsjahr: Juni 2010
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Chinese Journal of Physics
Jahrgang/Volume einer Zeitschrift: 48
(Heft-)Nummer: 3
Kurzbeschreibung (Abstract):

In this article we have studied the existence of stress and strain in a Si-doped GaN (2µm)/sapphire structure grown by the metal-organic chemical vapour deposition (MOCVD) method and tried to model the parameters. The presence of stress in our sample is supported by an E2 Raman shift mode (∆ω) of about 1.25 cm−1. To find the amount of biaxial basal plane stress we performed two techniques, XRD and film bending by a profilometer. The XRD technique confirmed that the GaN layer has a hexagonal structure with the lattice constants of c = 5.1825˚ A and a = 3.187˚ A. Our theoretical calculations show that this layer suffers a biaxial stress (σa) of about 0.175 ± 0.003 GPa. The profilometer data analysis also leads to a compatible value of 0.12 ± 0.04 GPa. These parameters altogether suggest the relation ∆ω = 7.1 ± 0.1σ cm−1/GPa for this layer.

Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Disperse Feststoffe
Hinterlegungsdatum: 18 Dez 2018 07:43
Letzte Änderung: 18 Dez 2018 07:43
PPN:
Export:
Suche nach Titel in: TUfind oder in Google
Frage zum Eintrag Frage zum Eintrag

Optionen (nur für Redakteure)
Redaktionelle Details anzeigen Redaktionelle Details anzeigen