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Number of items: 8.

Zhu, X. and Wang, J. and Pavlidis, Dimitris and Hsu, S. (2006):
InP/GaAsSb/InP DHBT Technology and its Application to MM-Wave Integrated Oscillators.
In: Proceedings of WOCSDICE 06, Sweden, 15-17 May 2006, S. 51-53, [Conference or Workshop Item]

Wang., J. and Zhu, X. and Pavlidis, Dimitris (2006):
Low-power InP/GaAsSb/InP DHBT cascode transimpedance amplifier with GBP/P-dc of 7.2 GHz/mW.
In: Electronics Letters, pp. 25-27, 42, [Article]

Zhu, X. and Wang, J. and Pavlidis, D. (2005):
First demonstration of basic- and Darlington-Coupled monolithic transimpedance amplifiers using InP/GaAsSb/InP DHBTs.
In: Microwave symposium digest 2005 IEEE MTT-S International of the IEEE International Microwave Symposium <2005,12-17 June, Long Beach, CA>, 2005, S. 101-104, [Conference or Workshop Item]

Zhu, X. and Wang, J. and Pavlidis, D. (2005):
InP/GaAsSb/InP DHBT monolithic transimpedance amplifier with large dynamic range.
[Elektronische Ressource]. - London, Horizon House Publ, In: Conference proceedings / European Microwave Week 2005 : 3 - 7 October 2005, CNIT la Défense, Paris, France; [comprises the] 35th European Microwave Conference 2005 ; The European Conference on Wireless Technology 2005 ; European Radar Conference 2005 ; G, [Conference or Workshop Item]

Wang, J. and Zhu, X. and Pavlidis, D. and Hsu, Shawn (2005):
Monolithic transimpedance amplifiers for low-power/low-noise and maximum bandwidth using InP/GaAsSb/InP DHBTs.
In: Proceedings of WOCSDICE '05 : Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe <29, 2005, Cardiff, UK>, 2005, S. 69-70, [Conference or Workshop Item]

Zhu, X. and Pavlidis, Dimitris and Zhao, G. and Han, B.-K. and Wibowo, A. and Pan, N. (2004):
First power demonstration of InP/GaAsSb/InP double HBTs.
Piscataway, NJ, IEEE Operations Center, In: Conference proceedings / 2004 International Conference Indium Phosphide and Related Materials, 16th IPRM : May 31 (Mon.) - June 4 (Fri.), 2004, Kagoshima Shimin Bunka Hall, Kagoshima, Jaoan / sponsored by the Japan Society of Applied Physics, IEEE Lasers, [Conference or Workshop Item]

Zhu, X. and Pavlidis, Dimitris and Zhao, G. (2003):
First high-frequency amd power demonstration of InGaAlAs/GaAsSb/InP double HBTs.
Piscataway, NJ, IEEE Service Center, In: International Conference on Indium Phosphide and Related Materials <2003, Santa Barbara, Calif.>: Proceedings ...- Piscataway, NJ: IEEE Service Center, 2003.- 578 S.- ISBN 0-7803-7704-4.- S. 149-152, [Conference or Workshop Item]

Zhu, X. and Pavlidis, Dimitris and Zhao, G. and Bove, P. and Lahrèche, H. and Langer, R. (2003):
First microwave characteristics of InGaAlAs/GaAsSb/InP double HBTs.
In: IEICE transactions on electronics / E / C, pp. 2010-2014, Vol. 8, [Article]

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