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Number of items: 4.

Cho, E. and Seo, S. and Jin, C. and Pavlidis, D. and Fu, G. and Tuerck, J. and Jaegermann, W. (2009):
Impact of in situ SiNx layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures.
In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 27 (5), pp. 2079-2083, ISSN 10711023,
[Online-Edition: http://dx.doi.org/10.1116/1.3186615],

Cho, E. and Pavlidis, Dimitris and Seo, S. and Jatta, Sandro and Koegel, Benjamin and Meissner, Peter (2006):
GaN/Air gap based micro opto electro mechanical fabry-perot filters.
In: International Workshop on Nitride Semiconductors (IWN 2006), Kyoto, Japan, pages Session TuP2Þ52, October 2006, [Conference or Workshop Item]

Hubbard, S. M. and Zhao, G. and Pavlidis, D. and Sutton, W. and Cho, E. (2005):
High resistivity GaN Buffer templates and their optimization for GaN-Based HFETs.
In: Journal of Crystal Growth, 284pp. 297-305, [Article]

Hubbard, S. M. and Zhao, G. and Pavlidis, Dimitris and Cho, E. and Sutton, W. (2004):
Optimization of GaN channel conductivity in AlGaN/GaN HFET structures grown by MOVPE.
In: Materials Research Society Fall Meeting, Boston, Mass., November 29-December 3, 2004, proceedings.- Paper E11.11, [Conference or Workshop Item]

This list was generated on Sat Apr 4 02:03:43 2020 CEST.