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Technology and characteristics of GaN-based diodes for high-field operation

Mutamba, K. and Yilmazoglu, O. and Sydlo, C. and Pavlidis, D. and Mir, S. and Hubbard, S. and Zhao, G. and Daumiller, I. (2005):
Technology and characteristics of GaN-based diodes for high-field operation.
In: Proceedings of WOCSDICE ' 05 : Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe <29, 2005,Cardiff, UK>, 2005, S.111 - 112, [Conference or Workshop Item]

Item Type: Conference or Workshop Item
Erschienen: 2005
Creators: Mutamba, K. and Yilmazoglu, O. and Sydlo, C. and Pavlidis, D. and Mir, S. and Hubbard, S. and Zhao, G. and Daumiller, I.
Title: Technology and characteristics of GaN-based diodes for high-field operation
Language: English
Series Name: Proceedings of WOCSDICE ' 05 : Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe <29, 2005,Cardiff, UK>, 2005, S.111 - 112
Divisions: 18 Department of Electrical Engineering and Information Technology
Date Deposited: 19 Nov 2008 16:23
License: [undefiniert]
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