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Number of items: 5.

Tiginyanu, I. and Kravetsky, I. V. and Marowsky, G. and Monecke, J. and Hartnagel, H. L. (2000):
Design of new nonlinear optical materials based on porous III-V compounds.
In: Physica statis solidi, pp. S. 557-560, b 221, [Article]

Tiginyanu, I. and Kravetsky, I. and Pavlidis, D. and Eisenbach, A. and Hildebrandt, R. and Marowsky, G. and Hartnagel, H. L. (2000):
Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire.
In: MRS Internet journal nitride semiconductor research. 5S1, W11.52 (2000), [Article]

Kravetsky, V. and Tiginyanu, I. M. and Hildebrandt, R. and Marowsky, G. and Pavlidis, D. and Eisenbach, A. and Hartnagel, H. L. (2000):
Nonlinear optical response of GaN layers on sapphire: the impact of fundamental beam interference.
In: Applied physics letters, pp. S. 810-812, 76, [Article]

Tiginyanu, I. and Kravetsky, I. V. and Monecke, J. and Cordts, W. and Marowsky, G. and Hartnagel, H. L. (2000):
Semiconductor sieves as nonlinear optical materials.
In: Applied physics letters, pp. S. 2415-2417, 77, [Article]

Tiginyanu, I. and Kravetsky, I. V. and Marowsky, G. and Monecke, J. and Cordts, W. and Hartnagel, H. L. (2000):
Semiconductor sieves as novel materials for nonlinear optical applications.
In: Materials Research Society: Fall Meeting <2000, Boston, Mass.>. Abstract Booklet; Report ES.13, [Conference or Workshop Item]

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