TU Darmstadt / ULB / TUbiblio

Impact of in situ SiNx layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures

Cho, E. and Seo, S. and Jin, C. and Pavlidis, D. and Fu, G. and Tuerck, J. and Jaegermann, W. (2009):
Impact of in situ SiNx layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures.
In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, pp. 2079-2083, 27, (5), ISSN 10711023,
[Online-Edition: http://dx.doi.org/10.1116/1.3186615],
[Article]

Item Type: Article
Erschienen: 2009
Creators: Cho, E. and Seo, S. and Jin, C. and Pavlidis, D. and Fu, G. and Tuerck, J. and Jaegermann, W.
Title: Impact of in situ SiNx layer grown with metal organic vapor phase epitaxy on the electrical and optical properties of AlN/GaN metal insulator semiconductor field effect transistor structures
Language: English
Journal or Publication Title: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Volume: 27
Number: 5
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 25 Mar 2015 21:32
Official URL: http://dx.doi.org/10.1116/1.3186615
Identification Number: doi:10.1116/1.3186615
Export:

Optionen (nur für Redakteure)

View Item View Item