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Number of items: 101.

Rudolph, R. ; Pettenkofer, C. ; Bostwick, A. A. ; Adams, J. A. ; Ohuchi, F. ; Olmstead, M. A. ; Jaeckel, B. ; Klein, Andreas ; Jaegermann, W. (2005):
Electronic structure of the Si(111): GaSe van der Waals-like surface termination.
In: New Journal of Physics, 7, pp. 108/1-108/20. ISSN 1367-2630,
[Article]

Hunger, R. ; Pettenkofer, C. (2005):
Band structure investigation of CulnSe2(001) by angle-resolved photoelectron spectroscopy.
In: Materials Research Society symposium proceedings, 865, [Article]

Yu, S. ; Müller, N. ; Heinzmann, U. ; Pettenkofer, C. ; Klein, Andreas ; Blaha, P. (2004):
Band symmetries of GaSe(0001) studied by spin-resolved electron spectroscopy using circularly polarized radiation.
In: Physical Review B, 69 (4), pp. 045320. ISSN 1098-0121,
[Article]

Tonti, D. ; Pettenkofer, C. ; Jaegermann, W. (2004):
Origin of the Electrochemical Potential in Intercalation Electrodes: Experimental Estimation of the Electronic and Ionic Contributions for Na Intercalated into TiS2.
In: The Journal of Physical Chemistry B, 108 (41), pp. 16093-16099. ISSN 1520-6106,
[Article]

Jaegermann, W. ; Tonti, D. ; Thißen, A. ; Ensling, D. ; Wu, Q.-H. ; Fernandez-Madrigal, F. ; Pettenkofer, C.
Zaghib, K. ; Julien, C. M. ; Prakash, J. (eds.) (2003):
Thin Film Intercalation Compounds: UHV Deposition and Changes of Electronic Structure.
In: Proceeding Electrochemical Society, In: New Trends in Intercalation Compounds for Energy Storage and Conversion: Proceedings of the International Symposium, pp. 561-574, ISBN 1-56677-403-9,
[Book Section]

Fritsche, R. ; Wisotzki, E. ; Thißen, A. ; Islam, A. B. M. O. ; Klein, Andreas ; Jaegermann, W. ; Rudolph, R. ; Tonti, D. ; Pettenkofer, C. (2002):
Preparation of a Si(111):GaSe van der Waals surface termination by selenization of a monolayer Ga on Si(111).
In: Surface Science, 515 (2-3), pp. 296-304. ISSN 00396028,
[Article]

Fritsche, R. ; Wisotzki, E. ; Islam, A. B. M. O. ; Thissen, A. ; Klein, Andreas ; Jaegermann, W. ; Rudolph, R. ; Tonti, D. ; Pettenkofer, C. (2002):
Electronic passivation of Si(111) by Ga–Se half-sheet termination.
In: Applied Physics Letters, 80 (8), pp. 1388-1390. ISSN 00036951,
[Article]

Klein, Andreas ; Tiefenbacher, S. ; Eyert, V. ; Pettenkofer, C. ; Jaegermann, W. (2001):
Electronic band structure of single-crystal and single-layer WS2: Influence of interlayer van der Waals interactions.
In: Physical Review B, 64 (20), ISSN 0163-1829,
[Article]

Saltas, V. ; Papageorgopoulos, C. A. ; Papageorgopoulos, D. C. ; Tonti, D. ; Pettenkofer, C. ; Jaegermann, W. (2001):
Synchrotron radiation studies of transition metal selenide thin film formation on Ti, Mo, and Cu substrates: In and out diffusion of Li.
389, In: Thin Solid Films, (1-2), pp. 307-314. ISSN 00406090,
[Article]

Sánchez-Royo, J. F. ; Segura, A. ; Lang, O. ; Schaar, E. ; Pettenkofer, C. ; Jaegermann, W. ; Roa, L. ; Chevy, A. (2001):
Optical and Photovoltaic Properties of InSe Thin Films Prepared by van der Waals Epitaxy.
In: Journal of Applied Physics, 90 (6), pp. 2818-2823. ISSN 00218979,
[Article]

Klein, Andreas ; Tiefenbacher, S. ; Eyert, V. ; Pettenkofer, C. ; Jaegermann, W. (2000):
Electronic properties of WS2 monolayer films.
380, In: Thin Solid Films, (1-2), pp. 221-223. Elsevier, ISSN 0040-6090, e-ISSN 1879-2731,
DOI: 10.1016/S0040-6090(00)01510-8,
[Article]

Jaegermann, W. ; Rudolph, R. ; Klein, Andreas ; Pettenkofer, C. (2000):
Perspectives of the concept of van der Waals epitaxy: growth of lattice mismatched GaSe (0001) films on Si (111), Si (110), and Si (100).
380, In: Thin Solid Films, (1-2), pp. 276-281. ISSN 00406090,
[Article]

Rudolph, R. ; Pettenkofer, C. ; Klein, Andreas ; Jaegermann, W. (2000):
Chemical passivation of Si(111) capped by a thin GaSe layer.
In: Applied Surface Science, 167 (1-2), pp. 122-124. ISSN 01694332,
[Article]

Rudolph, R. ; Pettenkofer, C. ; Klein, Andreas ; Jaegermann, W. (2000):
Van der Waals-Xenotaxy: Growth of GaSe(0001) on low index silicon surfaces.
166, In: Applied Surface Science, (1-4), pp. 437-441. Elsevier, ISSN 0169-4332, e-ISSN 1873-5584,
DOI: 10.1016/S0169-4332(00)00464-5,
[Article]

Papageorgopoulos, D. C. ; Saltas, V. ; Papageorgopoulos, C. A. ; Tonti, D. ; Pettenkofer, C. ; Jaegermann, W. (2000):
Synchrotron radiation studies on the growth of TSe2 (T= Ta, Ti) thin films on Ta substrates: intercalation and deintercalation of Na.
In: Applied Surface Science, 161 (3-4), pp. 347-354. ISSN 01694332,
[Article]

Saltas, V. ; Papageorgopoulos, C. A. ; Papageorgopoulos, D. C. ; Tonti, D. ; Pettenkofer, C. ; Jaegermann, W. (2000):
A synchrotron radiation study of CuxSey and NaxCuySez thin film formation on Cu substrates: Cl2 induced outdiffusion of Na.
7, In: Surface Review and Letters, (3), pp. 235-242. [Article]

Löher, T. ; Tomm, Y. ; Pettenkofer, C. ; Klein, Andreas ; Jaegermann, W. (2000):
Structural dipoles at interfaces between polar II-VI semiconductors CdS and CdTe and non-polar layered transition metal dichalcogenide semiconductors MoTe2and WSe2.
In: Semiconductor Science and Technology, 15 (6), pp. 514-522. ISSN 0268-1242,
[Article]

Tonti, D. ; Pettenkofer, C. ; Jaegermann, W. (2000):
In-situ photoelectron spectroscopy study of a thin film cathode in an operating battery system.
6, In: Ionics, (3-4), pp. 196-202. ISSN 0947-7047,
[Article]

Tiefenbacher, S. ; Pettenkofer, C. ; Jaegermann, W. (2000):
Moiré pattern in LEED obtained by van der Waals epitaxy of lattice mismatched WS2/MoTe2(0001) heterointerfaces.
450, In: Surface Science, (3), pp. 181-190. Elsevier, ISSN 0039-6028, e-ISSN 1879-2758,
DOI: 10.1016/S0039-6028(00)00297-1,
[Article]

Tonti, D. ; Pettenkofer, C. ; Jaegermann, W. (2000):
In-situ photoelectron spectroscopy study of a TiS2 cathode in an operating battery system.
3, In: Electrochemical and Solid-State Letters, (5), pp. 220-223. Electrochemical Society (ECS) ; Institute of Electrical and Electronics Engineers (IEEE) ; IEEE Electron Devices Society (EDS), ISSN 1099-0062, e-ISSN 1944-8775,
DOI: 10.1149/1.1391007,
[Article]

Rudolph, R. ; Klein, Andreas ; Tomm, Y. ; Pettenkofer, C. ; Jaegermann, W. (2000):
Van der Waals-Xenotaxy: Oriented growth of hexagonal GaSe(0001) on rectangular GaAs(110).
76, In: Applied Physics Letters, (9), pp. 1101-1103. American Institute of Physics (AIP), ISSN 0003-6951, e-ISSN 1077-3118,
DOI: 10.1063/1.125951,
[Article]

Jaegermann, W. ; Klein, Andreas ; Pettenkofer, C. (2000):
Electronic properties of van der Waals-epitaxy films and interfaces.
24, In: Physics and Chemistry of Materials with Low-Dimensional Structures, pp. 317-402, Dordrecht, Kluwer, [Book Section]

Papageorgopoulos, C. A. ; Kamaratos, M. ; Papageorgopoulos, D. C. ; Tonti, D. ; Pettenkofer, C. ; Jaegermann, W. (1999):
Exchange reaction between intercalated Li and Na into TiS2.
436, In: Surface Science, (1-3), pp. 213-219. ISSN 00396028,
[Article]

Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. (1999):
Band line-up of SnS2/SnSe2/SnS2 semiconductor quantum well prepared by an van der Waals epitaxy.
85, In: Journal of Applied Physics, (9), pp. 6550-6556. American Institute of Physics, ISSN 00218979,
[Article]

Kamaratos, M. ; Papageorgopoulos, C. A. ; Papageorgopoulos, D. C. ; Tonti, D. ; Pettenkofer, C. ; Jaegermann, W. (1999):
Cesium deintercalation by Li or Na deposited on 1T-TaSe2 (0001) surfaces.
147, In: Applied Surface Science, (1-4), pp. 101-106. Elsevier, ISSN 01694332,
[Article]

Schlaf, R. ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. (1999):
Band line-up of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Quantum dipole correction term of the electron affinity rule.
85, In: Journal of Applied Physics, (5), pp. 2732-2753. ISSN 00218979,
[Article]

Kamaratos, M. ; Papageorgopoulos, C. A. ; Papageorgopoulos, D. C. ; Tonti, D. ; Pettenkofer, C. ; Jaegermann, W. (1999):
Interaction between Li and Na intercalated into 1T-TaSe2 layer compounds.
6, In: Surface Review and Letters, (2), pp. 205-211. ISSN 0218-625X,
[Article]

Yu, S.-W. ; Lischke, T. ; David, R. ; Müller, N. ; Heinzmann, U. ; Pettenkofer, C. ; Klein, Andreas ; Perlov, A. Y. ; Krasovskii, E. E. (1999):
Spin resolved photoemission spectroscopy on WSe2.
101-103, In: Journal of Electron Spectroscopy and Related Phenomena, pp. 449-454. Elsevier, ISSN 03682048,
[Article]

Lang, O. ; Pettenkofer, C. ; Sanchez-Royo, J. F. ; Segura, A. ; Klein, Andreas ; Jaegermann, W. (1999):
Thin film growth and band lineup of In2O3 on the layered semiconductor InSe.
86, In: Journal of applied physics, pp. 5687-5691. [Article]

Yu, S.-W. ; Lischke, T. ; Müller, N. ; Heinzmann, U. ; Pettenkofer, C. ; Klein, Andreas ; Blaha, P. ; Braun, J. (1999):
Spin resolved photoemission spectroscopy using circularly polarized radiation from InSe(0001).
In: Journal of Physics: Condensed Matter, 11 (35), pp. 6715-6723. ISSN 0953-8984,
[Article]

Papageorgopoulos, C. A. ; Karamatos, M. ; Saltas, V. ; Jaegermann, W. ; Pettenkofer, C. ; Tonti, D. ; Karamatos, M. ; Saltas, V. ; Jaegermann, W. ; Pettenkofer, C. ; Tonti, D. (1998):
Na and Cl2 interaction on 1T and 2H-TaSe2 (0001) surfaces.
5, In: Surface review and letters, (5), pp. 997-1005. [Article]

Klein, Andreas ; Tomm, Y. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. ; Lux-Steiner, M. ; Bucher, E. (1998):
Photovoltaic properties of WSe2 single crystals studied by photoelectron spectroscopy.
51, In: Solar Energy Materials and Solar Cells, (2), pp. 181-191. Elsevier, ISSN 09270248,
[Article]

Klein, Andreas ; Lang, O. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. (1998):
Electronically decoupled InSe films prepared by Van der Waals epitaxy: transition from localized two-dimensional to delocalized states.
80, In: Physical Review Letters, (2), pp. 361-364. American Physical Society (APS), ISSN 0031-9007, e-ISSN 1079-7114,
DOI: 10.1103/PhysRevLett.80.361,
[Article]

Tonti, D. ; Pettenkofer, C. ; Jaegermann, W. ; Papageorgopoulos, D. C. ; Karamatos, M. ; Papageorgopoulos, C. A. (1998):
Alkali Displacement in intercalated 1T-TaSe2.
In: Ionics, 4 (1-2), pp. 93-100. Springer Nature, ISSN 0947-7047,
DOI: 10.1007/BF02375785,
[Article]

Karamatos, M. ; Saltas, V. ; Papageorgopoulos, C. A. ; Jaegermann, W. ; Pettenkofer, C. ; Tonti, D. (1998):
Interaction of Na and Cl2 on WSe2 (0001) surfaces chlorine induced Na deintercalation.
37, In: Surface Science, pp. 402-404. ISSN 00396028,
[Article]

Tonti, D. ; Pettenkofer, C. ; Jaegermann, W. ; Papageorgopoulos, D. C. ; Kamaratos, M. ; Papageorgopoulos, C. A. (1998):
Alkali displacements in intercalated 1T-TaSe2.
In: Ionics, 4 (1-2), pp. 93-100. ISSN 0947-7047,
[Article]

Klein, Andreas ; Löher, T. ; Tomm, Y. ; Pettenkofer, C. ; Jaegermann, W. (1997):
Band line-up between CdS and UHV-cleaved CuInS2 single crystals.
70, In: Applied Physics Letters, (10), pp. 1299-1301. American Institute of Physics (AIP), ISSN 0003-6951, e-ISSN 1077-3118,
DOI: 10.1063/1.118517,
[Article]

Schlaf, R. ; Löher, T. ; Klein, Andreas ; Pettenkofer, C. ; Jaegermann, W. (1997):
Band line-up of van der Waals epitaxy interfaces.
In: Materials Research Society: Symposium Proceedings. 448 (1997), S. 469-474, 448, In: MRS Proceedings, p. 469. ISSN 1946-4274,
[Article]

Schlaf, R. ; Lang, R. ; Parkinson, C. ; Armstrong, N. R. ; Pettenkofer, C. ; Jaegermann, W. (1997):
Experimental determination of quantum dipoles at semiconductor heterojunctions prepared by van der Waals epitaxy.
15, In: Journal of vacuum science and technology A, pp. 1365-1370. [Article]

Jiang, L. ; Jaegermann, W. ; Pettenkofer, C. ; Tomm, Y. ; Iyoda, T. ; Hashimoto, K. ; Fujishima, A. (1997):
Reversible Cu deintercalation on layered chalcogenide surfaces with scanning probe techniques: Towards nanometer scale storage devices.
9, In: Advanced Materials, pp. 578-581. ISSN 09359648,
[Article]

Löher, T. ; Klein, Andreas ; Schaar-Gabriel, E. ; Rudolph, R. ; Tomm, Y. ; Giersig, M. ; Pettenkofer, C. ; Jaegermann, W. (1997):
Van der Waals epitaxy of II-VI semiconductors on layered chalcogenide (0001) substrates: Towards buffer layers for lattice mismatched systems?
In: Materials Research Society: Symposium Proceedings. 441 (1997), S. 597-601, 441, In: MRS Proceedings, p. 597. ISSN 1946-4274,
[Article]

Papageorgopoulos, C. A. ; Kamaratos, M. ; Papageorgopoulos, D. C. ; Jaegermann, W. ; Pettenkofer, C. ; Henrion, O. (1997):
Adsorption of Br2 on Na-intercalated layered compounds: Bromine-induced deintercalation.
In: Surface Review and Letters, 04 (02), pp. 237-244. ISSN 0218-625X,
[Article]

Kamaratos, M. ; Papageorgopoulos, C. A. ; Papageorgopoulos, D. C. ; Jaegermann, W. ; Pettenkofer, C. ; Lehmann, J. (1997):
Adsorption of Br2 on Na-intercalated n-WSe2: Bromine-induced deintercalation.
In: Surface Science, 377-379, pp. 659-663. ISSN 00396028,
[Article]

Löher, T. ; Klein, Andreas ; Pettenkofer, C. ; Jaegermann, W. (1997):
Partial density of states in the CuInSe2 valence bands.
In: Journal of Applied Physics, 81 (12), pp. 7806-7809. ISSN 00218979,
[Article]

Sánchez-Royo, J. F. ; Segura, A. ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. ; Chevy, A. ; Roa, L. (1997):
Photovoltaic properties of indium selenide thin films prepared by van der Waals epitaxy.
In: Thin Solid Films, 307 (1-2), pp. 283-287. ISSN 00406090,
[Article]

Bronold, M. ; Kubala, S. ; Pettenkofer, C. ; Jaegermann, W. (1997):
Thin pyrite (FeS2) films by molecular beam deposition.
In: Thin Solid Films, 304 (1-2), pp. 178-182. ISSN 00406090,
[Article]

Schlaf, R. ; Armstrong, N. R. ; Parkinson, B. A. ; Pettenkofer, C. ; Jaegermann, W. (1997):
Van der Waals epitaxy of the layered semiconductors SnSe2 and SnS2: Morphology and growth modes.
In: Surface Science, 385 (1), pp. 1-14. ISSN 00396028,
[Article]

Lang, O. ; Klein, Andreas ; Pettenkofer, C. ; Jaegermann, W. ; Chevy, A. (1996):
Band lineup of lattice mismatched InSe/GaSe quantum well structures prepared by van der Waals epitaxy: Absence of interfacial dipoles.
In: Journal of Applied Physics, 80 (7), p. 3817. ISSN 00218979,
[Article]

Tenne, R. ; Galun, E. ; Ennaoui, A. ; Fiechter, S. ; Ellmer, K. ; Kunst, M. ; Koelzow, C. ; Pettenkofer, C. ; Tiefenbacher, S. ; Scheer, R. ; Jungblut, H. ; Jaegermann, W. (1996):
Characterization of oriented thin films of WSe2 grown by van der Waals rheotaxy.
In: Thin Solid Films, 272 (1), pp. 38-42. ISSN 00406090,
[Article]

Klein, Andreas ; Löher, T. ; Pettenkofer, C. ; Jaegermann, W. (1996):
Chemical interaction of Na with cleaved (011) surfaces of CuInSe2.
In: Journal of Applied Physics, 80 (9), pp. 5039-5043. ISSN 00218979,
[Article]

Löher, T. ; Tomm, Y. ; Klein, Andreas ; Su, D. ; Pettenkofer, C. ; Jaegermann, W. (1996):
Highly oriented layers of the three-dimensional semiconductor CdTe on the two-dimensional layered semiconductors MoTe2 and WSe2.
In: Journal of Applied Physics, 80 (10), p. 5718. ISSN 00218979,
[Article]

Henrion, O. ; Löher, T. ; Klein, Andreas ; Pettenkofer, C. ; Jaegermann, W. (1996):
Low temperature adsorption of water on cleaved GaAs(110) surfaces.
In: Surface Science, 366 (1), pp. L685-L688. ISSN 00396028,
[Article]

Jaegermann, W. ; Pettenkofer, C. ; Henrion, O. ; Tomm, Y. ; Papageorgopoulos, C. A. ; Kamaratos, M. ; Papageorgopoulos, D. C. (1996):
Surface science investigations of Cu intercalation in 1T TaSe2 and TiSe2 and its deintercalation by adsorbed Br2.
In: Ionics, 2 (3-4), pp. 201-207. ISSN 0947-7047,
[Article]

Mayer, T. ; Pettenkofer, C. ; Jaegermann, W. (1996):
Synchrotron-Induced Photoelectron Spectroscopy of Semiconductor/Electrolyte Model Interfaces: Coadsorption of Br2 and H2O on WSe2(0001).
In: The Journal of Physical Chemistry, 100 (42), pp. 16966-16977. ISSN 0022-3654,
[Article]

Tiefenbacher, S. ; Pettenkofer, C. ; Jaegermann, W. (1996):
Van Der Waals Epitaxy of Transition Metal Dichalcogenides Using Metal Organic Precursors.
In: MRS Proceedings, 441, p. 591. ISSN 1946-4274,
[Article]

Foulias, S. D. ; Vlachos, D. S. ; Papageorgopoulos, C. A. ; Yavor, R. ; Pettenkofer, C. ; Jaegermann, W. (1996):
A synchrotron radiation study of the interaction of Na with WSe2 and TaSe2: Oxygen-induced deintercalation.
In: Surface Science, 352-354, pp. 463-467. ISSN 00396028,
[Article]

Schellenberger, A. ; Jaegermann, W. ; Pettenkofer, C. ; Tomm, Y. (1995):
Electronic structure and electrochemical potential of electrons during alkali intercalation in layered materials.
In: Ionics, 1 (2), pp. 115-124. ISSN 0947-7047,
[Article]

Löher, T. ; Tomm, Y. ; Pettenkofer, C. ; Giersig, M. ; Jaegermann, W. (1995):
Epitaxial films of the 3D semiconductor CdS on the 2D layered substrate MX2 prepared by Van der Waals epitaxy.
In: Journal of Crystal Growth, 146 (1-4), pp. 408-413. ISSN 00220248,
[Article]

Löher, T. ; Jaegermann, W. ; Pettenkofer, C. (1995):
Formation and electronic properties of the CdS/CuInSe2(011) heterointerface studied by synchrotron-induced photoemission.
In: Journal of Applied Physics, 77 (2), p. 731. ISSN 00218979,
[Article]

Lang, O. ; Klein, Andreas ; Schlaf, R. ; Löher, T. ; Pettenkofer, C. ; Jaegermann, W. ; Chevy, A. (1995):
InSe/GaSe heterointerfaces prepared by Van der Waals epitaxy.
In: Journal of Crystal Growth, 146 (1-4), pp. 439-443. ISSN 00220248,
[Article]

Schlaf, R. ; Louder, D. ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. ; Nebesny, K. ; Lee, P. ; Parkinson, B. A. ; Armstrong, N. R. (1995):
Molecular beam epitaxy growth of thin films of SnS2 and SnSe2 on cleaved mica and the basal planes of single-crystal layered semiconductors: Reflection high-energy electron diffraction, low-energy electron diffraction, photoemission, and scanning tunneling microscopy/atomic force microscopy characterization.
In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 13 (3), p. 1761. ISSN 07342101,
[Article]

Pettenkofer, C. ; Jaegermann, W. (1994):
Charge-density-wave transformation induced by Na-intercalation into 1T-TaS2.
In: Physical Review B, 50 (12), pp. 8816-8823. ISSN 0163-1829,
[Article]

Loher, T. ; Pettenkofer, C. ; Jaegermann, W. (1994):
Electronic properties of intimate Mo and CdS junctions in-situ formed on CuInSe2(011) cleavage planes.
1, In: Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC), pp. 295-298,
[Conference or Workshop Item]

Schellenberger, A. ; Lehmann, J. ; Pettenkofer, C. ; Jaegermann, W. (1994):
Electronic structure of in-situ (in UHV) prepared Li/InSe insertion compounds.
In: Solid State Ionics, 74 (3-4), pp. 255-262. ISSN 01672738,
[Article]

Tiefenbacher, S. ; Sehnert, H. ; Pettenkofer, C. ; Jaegermann, W. (1994):
Epitaxial films of WS2 by metal organic van der Waals epitaxy.
In: Surface Science, 318 (1-2), pp. L1161-L1164. ISSN 00396028,
[Article]

Jaegermann, W. ; Pettenkofer, C. ; Schellenberger, A. ; Papageorgopoulos, C. A. ; Kamaratos, M. ; Vlachos, D. ; Tomm, Y. (1994):
Photoelectron spectroscopy of UHV in situ intercalated Li/TiSe2: Experimental proof of the rigid band model.
In: Chemical Physics Letters, 221 (5-6), pp. 441-446. ISSN 00092614,
[Article]

Lang, O. ; Schlaf, R. ; Tomm, Y. ; Pettenkofer, C. ; Jaegermann, W. (1994):
Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy: I. Growth conditions.
In: Journal of Applied Physics, 75 (12), p. 7805. ISSN 00218979,
[Article]

Lang, O. ; Tomm, Y. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. (1994):
Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy: II. Junction characterization.
In: Journal of Applied Physics, 75 (12), p. 7814. ISSN 00218979,
[Article]

Bronold, M. ; Pettenkofer, C. ; Jaegermann, W. (1994):
Surface photovoltage measurements on pyrite(100) cleavage planes: Evidence for electronic bulk defects.
In: Journal of Applied Physics, 76 (10), p. 5800. ISSN 00218979,
[Article]

Jaegermann, W. ; Pettenkofer, C. ; Lang, O. ; Schlaf, R. ; Tiefenbacher, S. ; Tomm, Y. (1994):
Thin film solar cells based on layered chalcogenides: Fundamentals and perspectives of van der Waals epitaxy.
1, In: Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC), pp. 357-360,
[Conference or Workshop Item]

Schlaf, R. ; Tiefenbacher, S. ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. (1994):
Van der Waals epitaxy of thin InSe films on MoTe2.
In: Surface Science, 303 (1-2), pp. L343-L347. ISSN 00396028,
[Article]

Löher, T. ; Tomm, Y. ; Pettenkofer, C. ; Jaegermann, W. (1994):
Van der Waals epitaxy of three-dimensional CdS on the two-dimensional layered substrate MoTe2(0001).
In: Applied Physics Letters, 65 (5), p. 555. ISSN 00036951,
[Article]

Klein, Andreas ; Pettenkofer, C. ; Jaegermann, W. ; Lux-Steiner, M. ; Bucher, E. (1994):
A photoemission study of barrier and transport properties of the interfaces of Au and Cu with WSe2(0001) surfaces.
In: Surface Science, 321 (1-2), pp. 19-31. ISSN 00396028,
[Article]

Kamaratos, M. ; Papageorgopoulos, C. A. ; Schellenberger, A. ; Holub-Krappe, E. ; Pettenkofer, C. ; Jaegermann, W. (1993):
Adsorption of Li on WS2(0001) at Low Temperature.
In: Materials Science Forum, 126-128, pp. 687-690. ISSN 1662-9752,
[Article]

Schlaf, R. ; Klein, Andreas ; Pettenkofer, C. ; Jaegermann, W. (1993):
Laterally inhomogeneous surface-potential distribution and photovoltage at clustered In/WSe2(0001) interfaces.
In: Physical Review B, 48 (19), pp. 14242-14252. ISSN 0163-1829,
[Article]

Klein, Andreas ; Lehmann, J. ; Pettenkofer, C. ; Jaegermann, W. ; Lux-Steiner, M. ; Bucher, E. (1993):
Schottky barriers on layered semiconductors: A comparison between van der Waals and non-van der Waals faces.
In: Applied Surface Science, 70-71, pp. 470-474. ISSN 01694332,
[Article]

Schellenberger, A. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. (1993):
XPS and SXPS studies on in-situ prepared Na/InSe insertion compounds.
In: Solid State Ionics, 66 (3-4), pp. 307-312. ISSN 01672738,
[Article]

Papageorgopoulos, C. A. ; Kamaratos, M. ; Papageorgopoulos, A. ; Schellenberger, A. ; Holub-Krappe, E. ; Pettenkofer, C. ; Jaegermann, W. (1992):
Adsorption of Cs on WSe2 van der Waals surfaces: Temperature and sputter effects on growth properties.
In: Surface Science, 275 (3), pp. 314-322. ISSN 00396028,
[Article]

Schellenberger, A. ; Jaegermann, W. ; Pettenkofer, C. ; Papageorgopoulos, C. A. ; Kamaratos, M. (1992):
Alkali Intercalation into Layered Compounds: UHV in-situ Preparation and Reactivity.
In: Berichte der Bunsengesellschaft für Physikalische Chemie, 96 (11), pp. 1755-1761. ISSN 00059021,
[Article]

Mayer, T. ; Lehmann, J. ; Pettenkofer, C. ; Jaegermann, W. (1992):
Coadsorption of Na and Br2 on WSe2(0001): Creating a surface redox couple?
In: Chemical Physics Letters, 198 (6), pp. 621-627. ISSN 00092614,
[Article]

Pettenkofer, C. ; Jaegermann, W. ; Schellenberger, A. ; Holub-Krappe, E. ; Papageorgopoulos, C. A. ; Kamaratos, M. ; Papageorgopoulos, A. (1992):
Cs deposition on layered 2H TaSe2(0001) surfaces: Adsorption or intercalation?
In: Solid State Communications, 84 (9), pp. 921-926. ISSN 00381098,
[Article]

Mayer, T. ; Klein, Andreas ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. (1992):
H2O adsorption on the layered chalcogenide semiconductors WSe2, InSe and GaSe.
In: Surface Science, 269-270, pp. 909-914. ISSN 00396028,
[Article]

Klein, Andreas ; Pettenkofer, C. ; Jaegermann, W. ; Chassé, T. ; Horn, K. ; Lux-Steiner, M. C. ; Bucher, E. (1992):
Interface reaction of Pt on p-WSe2(0001) surfaces.
In: Surface Science, 264 (1-2), pp. L193-L199. ISSN 00396028,
[Article]

Schmeiβer, D. ; Jaegermann, W. ; Pettenkofer, C. ; Wachtel, H. ; Jimenez-Gonzales, A. ; Schütz, J. U. von ; Wolf, H. C. ; Erk, P. ; Meixner, H. ; Hünig, S. (1992):
One-dimensional band dispersion with a correlation modulated charge density.
In: Solid State Communications, 81 (10), pp. 827-830. ISSN 00381098,
DOI: 10.1016/0038-1098(92)90546-L,
[Article]

Schellenberger, A. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. (1992):
Synchrotron induced surface photovoltage saturation at intercalated Na/WSe2 interfaces.
In: Physical Review B, 45 (7), pp. 3538-3545. ISSN 0163-1829,
[Article]

Lang, O. ; Schlaf, R. ; Tomm, Y. ; Pettenkofer, C. ; Jaegermann, W. (1992):
Van Der Waals Epitaxy of GaSe on WSe2.
In: MRS Proceedings, 263, p. 291. ISSN 1946-4274,
[Article]

Bronold, M. ; Pettenkofer, C. ; Jaegermann, W. (1991):
Alkali metal intercalation into SnS2: UHV Investigations of (0001) Surfaces.
In: Applied Physics A Solids and Surfaces, 52 (3), pp. 171-179. ISSN 0721-7250,
[Article]

Mayer, T. ; Pettenkofer, C. ; Jaegermann, W. (1991):
Chemical reactivity of the layered chalcogenide semiconductors WSe2 and InSe controlled by structural and electronic factors.
In: Journal of Physics: Condensed Matter, 3, pp. S161-S166. ISSN 0953-8984,
[Article]

Pettenkofer, C. ; Jaegermann, W. ; Parkinson, B. A. (1991):
Copper intercalation in 1T-TaS2.
In: Surface Science, 251-252, pp. 583-586. ISSN 00396028,
[Article]

Schlaf, R. ; Sehnert, H. ; Pettenkofer, C. ; Jaegermann, W. (1991):
Inhomogeneous Electric Potential Distributions Induced by in-Clusters Grown on p-WSe2(0001) Surfaces.
In: MRS Proceedings, 221, p. 137. ISSN 1946-4274,
[Article]

Chassé, T. ; Theis, W. ; Chen, T. P. ; Evans, D. A. ; Horn, K. ; Pettenkofer, C. ; Jaegermann, W. (1991):
Interface chemistry and band bending induced by Pt deposition onto GaP(110).
In: Surface Science, 251-252, pp. 472-477. ISSN 00396028,
[Article]

Schellenberger, A. ; Schlaf, R. ; Mayer, T. ; Holub-Krappe, E. ; Pettenkofer, C. ; Jaegermann, W. ; Ditzinger, U. A. ; Neddermeyer, H. (1991):
Na adsorption on the layered semiconductors SnS2 and WSe2.
In: Surface Science Letters, 241 (3), pp. L25-L29. ISSN 01672584,
[Article]

Schmeißer, D. ; Bätz, P. ; Göpel, W. ; Jaegermann, W. ; Pettenkofer, C. ; Wachtel, H. ; Jimenez-Gonzales, A. ; Schütz, J. U. von ; Wolf, H. C. ; Taborski, J. ; Wüstenhagen, V. ; Umbach, E. ; Erk, P. ; Meixner, H. ; Hünig, S. (1991):
Semiconducting and Metallic States in Conducting Organic Low-dimensional Materials.
In: Berichte der Bunsengesellschaft für Physikalische Chemie, 95 (11), pp. 1441-1447. ISSN 00059021,
DOI: 10.1002/bbpc.19910951124,
[Article]

Mayer, T. ; Pettenkofer, C. ; Jaegermann, W. ; Levy-Clement, C. (1991):
Simulation of semiconductor/electrolyte interfaces in UHV: X-ray induced reactions of Br2 on InSe(0001) surfaces.
In: Surface Science, 254 (1-3), pp. L423-L427. ISSN 00396028,
[Article]

Pettenkofer, C. ; Jaegermann, W. ; Bronold, M. (1991):
Site Specific Surface Interaction of Electron Donors and Acceptors on FeS2(100) Cleavage Planes.
In: Berichte der Bunsengesellschaft für Physikalische Chemie, 95 (5), pp. 560-565. ISSN 00059021,
[Article]

Bronold, M. ; Pettenkofer, C. ; Jaegermann, W. (1991):
Surface Analysis Investigations on the Reaction of FeS2 with Alkali Metals.
In: Berichte der Bunsengesellschaft für Physikalische Chemie, 95 (11), pp. 1475-1479. ISSN 00059021,
[Article]

Jaegermann, W. ; Pettenkofer, C. ; Parkinson, B. A. (1990):
Ag on p-WSe2(0001) surfaces: Approaching the Schottky limit?
In: Vacuum, 41 (4-6), pp. 800-803. ISSN 0042207X,
[Article]

Jaegermann, W. ; Pettenkofer, C. ; Alonso Vante, N. ; Schwarzlose, T. ; Tributsch, H. (1990):
Chevrel Phase Type Compounds: Electronic, Chemical and Structural Factors in Oxygen Reduction Electrocatalysis.
In: Berichte der Bunsengesellschaft für Physikalische Chemie, 94 (4), pp. 513-520. ISSN 00059021,
[Article]

Jaegermann, W. ; Pettenkofer, C. ; Parkinson, B. A. (1990):
Cu and Ag deposition on layered p-type WSe2: Approaching the Schottky limit.
In: Physical Review B, 42 (12), pp. 7487-7496. ISSN 0163-1829,
[Article]

Ohuchi, F. S. ; Jaegermann, W. ; Pettenkofer, C. ; Parkinson, B. A. (1989):
Semiconductor to metal transition of WS2 induced by K intercalation in ultrahigh vacuum.
In: Langmuir, 5 (2), pp. 439-442. ISSN 0743-7463,
[Article]

Jaegermann, W. ; Pettenkofer, C. (1988):
Stability of Photoelectrodes Controlled by Electronic Factors: Layered Chalcogenides of Group IVb.
In: Berichte der Bunsengesellschaft für Physikalische Chemie, 92 (11), pp. 1354-1358. ISSN 00059021,
[Article]

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