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InSe/GaSe heterointerfaces prepared by Van der Waals epitaxy

Lang, O. and Klein, Andreas and Schlaf, R. and Löher, T. and Pettenkofer, C. and Jaegermann, W. and Chevy, A. (1995):
InSe/GaSe heterointerfaces prepared by Van der Waals epitaxy.
In: Journal of Crystal Growth, 146 (1-4), pp. 439-443, ISSN 00220248,
[Online-Edition: http://dx.doi.org/10.1016/0022-0248(94)00504-4],
[Article]

Item Type: Article
Erschienen: 1995
Creators: Lang, O. and Klein, Andreas and Schlaf, R. and Löher, T. and Pettenkofer, C. and Jaegermann, W. and Chevy, A.
Title: InSe/GaSe heterointerfaces prepared by Van der Waals epitaxy
Language: English
Journal or Publication Title: Journal of Crystal Growth
Volume: 146
Number: 1-4
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 26 Apr 2015 22:46
Official URL: http://dx.doi.org/10.1016/0022-0248(94)00504-4
Identification Number: doi:10.1016/0022-0248(94)00504-4
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