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Jaeckel, B. ; Lim, T. ; Klein, Andreas ; Jaegermann, W. ; Parkinson, B. A. :
Deposition of Tetracene on GaSe Passivated Si(111).
[Online-Edition: http://dx.doi.org/10.1021/la061361g]
In: Langmuir, 23 (9) pp. 4856-4861. ISSN 0743-7463
[Artikel], (2007)

Schlaf, R. ; Armstrong, N. R. ; Parkinson, B. A. ; Pettenkofer, C. ; Jaegermann, W. :
Van der Waals epitaxy of the layered semiconductors SnSe2 and SnS2: Morphology and growth modes.
[Online-Edition: http://dx.doi.org/10.1016/S0039-6028(97)00066-6]
In: Surface Science, 385 (1) pp. 1-14. ISSN 00396028
[Artikel], (1997)

Schlaf, R. ; Louder, D. ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. ; Nebesny, K. ; Lee, P. ; Parkinson, B. A. ; Armstrong, N. R. :
Molecular beam epitaxy growth of thin films of SnS2 and SnSe2 on cleaved mica and the basal planes of single-crystal layered semiconductors: Reflection high-energy electron diffraction, low-energy electron diffraction, photoemission, and scanning tunneling microscopy/atomic force microscopy characterization.
[Online-Edition: http://dx.doi.org/10.1116/1.579766]
In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 13 (3) p. 1761. ISSN 07342101
[Artikel], (1995)

Pettenkofer, C. ; Jaegermann, W. ; Parkinson, B. A. :
Copper intercalation in 1T-TaS2.
[Online-Edition: http://dx.doi.org/10.1016/0039-6028(91)91059-7]
In: Surface Science, 251-252 pp. 583-586. ISSN 00396028
[Artikel], (1991)

Jaegermann, W. ; Pettenkofer, C. ; Parkinson, B. A. :
Ag on p-WSe2(0001) surfaces: Approaching the Schottky limit?
[Online-Edition: http://dx.doi.org/10.1016/0042-207X(90)93788-K]
In: Vacuum, 41 (4-6) pp. 800-803. ISSN 0042207X
[Artikel], (1990)

Jaegermann, W. ; Pettenkofer, C. ; Parkinson, B. A. :
Cu and Ag deposition on layered p-type WSe2: Approaching the Schottky limit.
[Online-Edition: http://dx.doi.org/10.1103/PhysRevB.42.7487]
In: Physical Review B, 42 (12) pp. 7487-7496. ISSN 0163-1829
[Artikel], (1990)

Jaegermann, W. ; Ohuchi, F. S. ; Parkinson, B. A. :
Electrochemical and solid state reactions of copper with n-SnS2.
[Online-Edition: http://dx.doi.org/10.1002/bbpc.19890930107]
In: Berichte der Bunsengesellschaft für physikalische Chemie, 93 (1) pp. 29-37. ISSN 00059021
[Artikel], (1989)

Ohuchi, F. S. ; Jaegermann, W. ; Pettenkofer, C. ; Parkinson, B. A. :
Semiconductor to metal transition of WS2 induced by K intercalation in ultrahigh vacuum.
[Online-Edition: http://dx.doi.org/10.1021/la00086a026]
In: Langmuir, 5 (2) pp. 439-442. ISSN 0743-7463
[Artikel], (1989)

Jaegermann, W. ; Ohuchi, F. S. ; Parkinson, B. A. :
Interaction of Cu, Ag and Au with van der Waals faces of WS and SnS2.
[Online-Edition: http://dx.doi.org/10.1016/0039-6028(88)90607-3]
In: Surface Science, 201 (1-2) pp. 211-227. ISSN 00396028
[Artikel], (1988)

O'Hare, D. ; Jaegermann, W. ; Williamson, D. L. ; Ohuchi, F. S. ; Parkinson, B. A. :
X-ray photoelectron, Moessbauer, magnetic and electrical conductivity study of SnS2{CoCp2}0.31.
[Online-Edition: http://dx.doi.org/10.1021/ic00282a006]
In: Inorganic Chemistry, 27 (9) pp. 1537-1542. ISSN 0020-1669
[Artikel], (1988)

Ohuchi, F. S. ; Jaegermann, W. ; Parkinson, B. A. :
XPS investigation of the reaction of SnS2(0001) with Cu.
[Online-Edition: http://dx.doi.org/10.1016/0039-6028(94)91236-X]
In: Surface Science, 194 (1-2) L69-L76. ISSN 00396028
[Artikel], (1988)

Jaegermann, W. ; Ohuchi, F. S. ; Parkinson, B. A. :
The interaction of group IB metals with van der waals faces of semiconducting metal dichalcogenides.
[Online-Edition: http://dx.doi.org/10.1002/sia.740120504]
In: Surface and Interface Analysis, 12 (5) pp. 293-296. ISSN 0142-2421
[Artikel], (1988)

Doering, D. L. ; Ohuchi, F. S. ; Jaegermann, W. ; Parkinson, B. A. :
Epitaxial Growth of Copper, Silver and Gold on a Semiconducting Layered Material: Tungsten Disulfide.
[Online-Edition: http://dx.doi.org/10.1557/PROC-102-41]
In: MRS Proceedings, 102 p. 41. ISSN 1946-4274
[Artikel], (1987)

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