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Number of items: 13.

Jaeckel, B. and Lim, T. and Klein, Andreas and Jaegermann, W. and Parkinson, B. A. (2007):
Deposition of Tetracene on GaSe Passivated Si(111).
23, In: Langmuir, (9), pp. 4856-4861, ISSN 0743-7463, [Online-Edition: http://dx.doi.org/10.1021/la061361g],
[Article]

Schlaf, R. and Armstrong, N. R. and Parkinson, B. A. and Pettenkofer, C. and Jaegermann, W. (1997):
Van der Waals epitaxy of the layered semiconductors SnSe2 and SnS2: Morphology and growth modes.
385, In: Surface Science, (1), pp. 1-14, ISSN 00396028, [Online-Edition: http://dx.doi.org/10.1016/S0039-6028(97)00066-6],
[Article]

Schlaf, R. and Louder, D. and Lang, O. and Pettenkofer, C. and Jaegermann, W. and Nebesny, K. and Lee, P. and Parkinson, B. A. and Armstrong, N. R. (1995):
Molecular beam epitaxy growth of thin films of SnS2 and SnSe2 on cleaved mica and the basal planes of single-crystal layered semiconductors: Reflection high-energy electron diffraction, low-energy electron diffraction, photoemission, and scanning tunneling microscopy/atomic force microscopy characterization.
13, In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, (3), p. 1761, ISSN 07342101, [Online-Edition: http://dx.doi.org/10.1116/1.579766],
[Article]

Pettenkofer, C. and Jaegermann, W. and Parkinson, B. A. (1991):
Copper intercalation in 1T-TaS2.
251-252, In: Surface Science, pp. 583-586, ISSN 00396028, [Online-Edition: http://dx.doi.org/10.1016/0039-6028(91)91059-7],
[Article]

Jaegermann, W. and Pettenkofer, C. and Parkinson, B. A. (1990):
Ag on p-WSe2(0001) surfaces: Approaching the Schottky limit?
41, In: Vacuum, (4-6), pp. 800-803, ISSN 0042207X, [Online-Edition: http://dx.doi.org/10.1016/0042-207X(90)93788-K],
[Article]

Jaegermann, W. and Pettenkofer, C. and Parkinson, B. A. (1990):
Cu and Ag deposition on layered p-type WSe2: Approaching the Schottky limit.
42, In: Physical Review B, (12), pp. 7487-7496, ISSN 0163-1829, [Online-Edition: http://dx.doi.org/10.1103/PhysRevB.42.7487],
[Article]

Jaegermann, W. and Ohuchi, F. S. and Parkinson, B. A. (1989):
Electrochemical and solid state reactions of copper with n-SnS2.
93, In: Berichte der Bunsengesellschaft für physikalische Chemie, (1), pp. 29-37, ISSN 00059021, [Online-Edition: http://dx.doi.org/10.1002/bbpc.19890930107],
[Article]

Ohuchi, F. S. and Jaegermann, W. and Pettenkofer, C. and Parkinson, B. A. (1989):
Semiconductor to metal transition of WS2 induced by K intercalation in ultrahigh vacuum.
5, In: Langmuir, (2), pp. 439-442, ISSN 0743-7463, [Online-Edition: http://dx.doi.org/10.1021/la00086a026],
[Article]

Jaegermann, W. and Ohuchi, F. S. and Parkinson, B. A. (1988):
Interaction of Cu, Ag and Au with van der Waals faces of WS and SnS2.
201, In: Surface Science, (1-2), pp. 211-227, ISSN 00396028, [Online-Edition: http://dx.doi.org/10.1016/0039-6028(88)90607-3],
[Article]

O'Hare, D. and Jaegermann, W. and Williamson, D. L. and Ohuchi, F. S. and Parkinson, B. A. (1988):
X-ray photoelectron, Moessbauer, magnetic and electrical conductivity study of SnS2{CoCp2}0.31.
27, In: Inorganic Chemistry, (9), pp. 1537-1542, ISSN 0020-1669, [Online-Edition: http://dx.doi.org/10.1021/ic00282a006],
[Article]

Ohuchi, F. S. and Jaegermann, W. and Parkinson, B. A. (1988):
XPS investigation of the reaction of SnS2(0001) with Cu.
194, In: Surface Science, (1-2), pp. L69-L76, ISSN 00396028, [Online-Edition: http://dx.doi.org/10.1016/0039-6028(94)91236-X],
[Article]

Jaegermann, W. and Ohuchi, F. S. and Parkinson, B. A. (1988):
The interaction of group IB metals with van der waals faces of semiconducting metal dichalcogenides.
12, In: Surface and Interface Analysis, (5), pp. 293-296, ISSN 0142-2421, [Online-Edition: http://dx.doi.org/10.1002/sia.740120504],
[Article]

Doering, D. L. and Ohuchi, F. S. and Jaegermann, W. and Parkinson, B. A. (1987):
Epitaxial Growth of Copper, Silver and Gold on a Semiconducting Layered Material: Tungsten Disulfide.
102, In: MRS Proceedings, p. 41, ISSN 1946-4274, [Online-Edition: http://dx.doi.org/10.1557/PROC-102-41],
[Article]

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