Jaeckel, B. ; Lim, T. ; Klein, Andreas ; Jaegermann, W. ; Parkinson, B. A. (2007)
Deposition of Tetracene on GaSe Passivated Si(111).
In: Langmuir, 23 (9)
doi: 10.1021/la061361g
Artikel, Bibliographie

Schlaf, R. ; Armstrong, N. R. ; Parkinson, B. A. ; Pettenkofer, C. ; Jaegermann, W. (1997)
Van der Waals epitaxy of the layered semiconductors SnSe2 and SnS2: Morphology and growth modes.
In: Surface Science, 385 (1)
doi: 10.1016/S0039-6028(97)00066-6
Artikel, Bibliographie

Schlaf, R. ; Louder, D. ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. ; Nebesny, K. ; Lee, P. ; Parkinson, B. A. ; Armstrong, N. R. (1995)
Molecular beam epitaxy growth of thin films of SnS2 and SnSe2 on cleaved mica and the basal planes of single-crystal layered semiconductors: Reflection high-energy electron diffraction, low-energy electron diffraction, photoemission, and scanning tunneling microscopy/atomic force microscopy characterization.
In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 13 (3)
doi: 10.1116/1.579766
Artikel, Bibliographie

Pettenkofer, C. ; Jaegermann, W. ; Parkinson, B. A. (1991)
Copper intercalation in 1T-TaS2.
In: Surface Science, 251-252
doi: 10.1016/0039-6028(91)91059-7
Artikel, Bibliographie

Jaegermann, W. ; Pettenkofer, C. ; Parkinson, B. A. (1990)
Ag on p-WSe2(0001) surfaces: Approaching the Schottky limit?
In: Vacuum, 41 (4-6)
doi: 10.1016/0042-207X(90)93788-K
Artikel, Bibliographie

Jaegermann, W. ; Pettenkofer, C. ; Parkinson, B. A. (1990)
Cu and Ag deposition on layered p-type WSe2: Approaching the Schottky limit.
In: Physical Review B, 42 (12)
doi: 10.1103/PhysRevB.42.7487
Artikel, Bibliographie

Jaegermann, W. ; Ohuchi, F. S. ; Parkinson, B. A. (1989)
Electrochemical and solid state reactions of copper with n-SnS2.
In: Berichte der Bunsengesellschaft für physikalische Chemie, 93 (1)
doi: 10.1002/bbpc.19890930107
Artikel, Bibliographie

Ohuchi, F. S. ; Jaegermann, W. ; Pettenkofer, C. ; Parkinson, B. A. (1989)
Semiconductor to metal transition of WS2 induced by K intercalation in ultrahigh vacuum.
In: Langmuir, 5 (2)
doi: 10.1021/la00086a026
Artikel, Bibliographie

Jaegermann, W. ; Ohuchi, F. S. ; Parkinson, B. A. (1988)
Interaction of Cu, Ag and Au with van der Waals faces of WS and SnS2.
In: Surface Science, 201 (1-2)
doi: 10.1016/0039-6028(88)90607-3
Artikel, Bibliographie

O'Hare, D. ; Jaegermann, W. ; Williamson, D. L. ; Ohuchi, F. S. ; Parkinson, B. A. (1988)
X-ray photoelectron, Moessbauer, magnetic and electrical conductivity study of SnS2{CoCp2}0.31.
In: Inorganic Chemistry, 27 (9)
doi: 10.1021/ic00282a006
Artikel, Bibliographie

Ohuchi, F. S. ; Jaegermann, W. ; Parkinson, B. A. (1988)
XPS investigation of the reaction of SnS2(0001) with Cu.
In: Surface Science, 194 (1-2)
doi: 10.1016/0039-6028(94)91236-X
Artikel, Bibliographie

Jaegermann, W. ; Ohuchi, F. S. ; Parkinson, B. A. (1988)
The interaction of group IB metals with van der waals faces of semiconducting metal dichalcogenides.
In: Surface and Interface Analysis, 12 (5)
doi: 10.1002/sia.740120504
Artikel, Bibliographie

Doering, D. L. ; Ohuchi, F. S. ; Jaegermann, W. ; Parkinson, B. A. (1987)
Epitaxial Growth of Copper, Silver and Gold on a Semiconducting Layered Material: Tungsten Disulfide.
In: MRS Proceedings, 102
doi: 10.1557/PROC-102-41
Artikel, Bibliographie