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Number of items: 4.

Wisotzki, E. and Klein, Andreas and Jaegermann, W. (2005):
Van der Waals' condensation of ZnSe on layered GaSe van der Waals' surfaces: A new route to self-organized well-defined quantum dot structures.
17, In: Advanced Materials, (9), pp. 1173-1177, ISSN 09359648, [Article]

Fritsche, R. and Wisotzki, E. and Thißen, A. and Islam, A. B. M. O. and Klein, Andreas and Jaegermann, W. and Rudolph, R. and Tonti, D. and Pettenkofer, C. (2002):
Preparation of a Si(111):GaSe van der Waals surface termination by selenization of a monolayer Ga on Si(111).
515, In: Surface Science, (2-3), pp. 296-304, ISSN 00396028, [Online-Edition: http://dx.doi.org/10.1016/S0039-6028(02)01851-4],
[Article]

Fritsche, R. and Wisotzki, E. and Islam, A. B. M. O. and Thissen, A. and Klein, Andreas and Jaegermann, W. and Rudolph, R. and Tonti, D. and Pettenkofer, C. (2002):
Electronic passivation of Si(111) by Ga–Se half-sheet termination.
80, In: Applied Physics Letters, (8), pp. 1388-1390, ISSN 00036951, [Online-Edition: http://dx.doi.org/10.1063/1.1454228],
[Article]

Wisotzki, E. and Balogh, Adam G. and Hahn, H. and Wolan, J. T. and Hoflund, G. B. (1999):
Room-temperature growth of ZrO2 thin films using a novel hyperthermal oxygen-atom source.
A, In: Journal of Vacuum Science and Technology, (17), p. 1, [Article]

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