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Number of items: 5.

Fritsche, R. ; Wisotzki, E. ; Islam, A. B. M. O. ; Thissen, A. ; Klein, Andreas ; Jaegermann, Wolfram ; Rudolph, R. ; Tonti, D. ; Pettenkofer, C. (2021):
Electronic passivation of Si(111) by Ga–Se half-sheet termination. (Publisher's Version)
In: Applied Physics Letters, 80 (8), pp. 1388-1390. AIP Publishing, ISSN 0003-6951, e-ISSN 1077-3118,
DOI: 10.26083/tuprints-00019835,
[Article]

Wisotzki, E. ; Klein, Andreas ; Jaegermann, W. (2005):
Van der Waals' condensation of ZnSe on layered GaSe van der Waals' surfaces: A new route to self-organized well-defined quantum dot structures.
In: Advanced Materials, 17 (9), pp. 1173-1177. ISSN 09359648,
[Article]

Fritsche, R. ; Wisotzki, E. ; Thißen, A. ; Islam, A. B. M. O. ; Klein, Andreas ; Jaegermann, W. ; Rudolph, R. ; Tonti, D. ; Pettenkofer, C. (2002):
Preparation of a Si(111):GaSe van der Waals surface termination by selenization of a monolayer Ga on Si(111).
In: Surface Science, 515 (2-3), pp. 296-304. ISSN 00396028,
[Article]

Fritsche, R. ; Wisotzki, E. ; Islam, A. B. M. O. ; Thissen, A. ; Klein, Andreas ; Jaegermann, W. ; Rudolph, R. ; Tonti, D. ; Pettenkofer, C. (2002):
Electronic passivation of Si(111) by Ga–Se half-sheet termination.
In: Applied Physics Letters, 80 (8), pp. 1388-1390. ISSN 00036951,
[Article]

Wisotzki, E. ; Balogh, Adam G. ; Hahn, H. ; Wolan, J. T. ; Hoflund, G. B. (1999):
Room-temperature growth of ZrO2 thin films using a novel hyperthermal oxygen-atom source.
In: Journal of Vacuum Science and Technology A, 17 (1), pp. 14-18. American Vacuum Society (AVS), ISSN 0734-2101, e-ISSN 1520-8559,
DOI: 10.1116/1.581547,
[Article]

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