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Number of items: 15.

Schirski, Marc and Gerndt, Andreas and van Reimersdahl, Thomas and Kuhlen, Torsten and Adomeit, Philipp and Lang, O. and Pischinger, Stefan and Bischof, Christian (2003):
Vista FlowLib : a framework for interactive visualization and exploration of unsteady flows in virtual environments.
Aire-la-Ville, Switzerland, Eurographics Association, In: IPT/EGVE 2003 : Seventh Immersive Projection Technology Workshop, Ninth Eurographics Workshop on Virtual Environments ; Zurich, Switzerland, May 22 - 23, 2003 ; Eurographics/Fraunhofer IAO workshop proceedings / sponsored by the Eurographics Organization, In: ACM International Conference Proceeding Series ; Vol. 39, [Conference or Workshop Item]

Sánchez-Royo, J. F. and Segura, A. and Lang, O. and Schaar, E. and Pettenkofer, C. and Jaegermann, W. and Roa, L. and Chevy, A. (2001):
Optical and Photovoltaic Properties of InSe Thin Films Prepared by van der Waals Epitaxy.
In: Journal of Applied Physics, pp. 2818-2823, 90, (6), ISSN 00218979,
[Online-Edition: http://dx.doi.org/10.1063/1.1389479],
[Article]

Schlaf, R. and Lang, O. and Pettenkofer, C. and Jaegermann, W. (1999):
Band line-up of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Quantum dipole correction term of the electron affinity rule.
In: Journal of Applied Physics, pp. 2732-2753, 85, (5), ISSN 00218979,
[Article]

Lang, O. and Pettenkofer, C. and Sanchez-Royo, J. F. and Segura, A. and Klein, Andreas and Jaegermann, W. (1999):
Thin film growth and band lineup of In2O3 on the layered semiconductor InSe.
In: Journal of applied physics, pp. 5687-5691, 86, [Article]

Klein, Andreas and Lang, O. and Schlaf, R. and Pettenkofer, C. and Jaegermann, W. (1998):
Electronically decoupled InSe films prepared by Van der Waals epitaxy: transition from localized two-dimensional to delocalized states.
In: Physical Review Letters, p. 361, 80, ISSN 0031-9007,
[Article]

Sánchez-Royo, J. F. and Segura, A. and Lang, O. and Pettenkofer, C. and Jaegermann, W. and Chevy, A. and Roa, L. (1997):
Photovoltaic properties of indium selenide thin films prepared by van der Waals epitaxy.
In: Thin Solid Films, pp. 283-287, 307, (1-2), ISSN 00406090,
[Online-Edition: http://dx.doi.org/10.1016/S0040-6090(97)00265-4],
[Article]

Lang, O. and Klein, Andreas and Pettenkofer, C. and Jaegermann, W. and Chevy, A. (1996):
Band lineup of lattice mismatched InSe/GaSe quantum well structures prepared by van der Waals epitaxy: Absence of interfacial dipoles.
In: Journal of Applied Physics, p. 3817, 80, (7), ISSN 00218979,
[Online-Edition: http://dx.doi.org/10.1063/1.363335],
[Article]

Lang, O. and Klein, Andreas and Schlaf, R. and Löher, T. and Pettenkofer, C. and Jaegermann, W. and Chevy, A. (1995):
InSe/GaSe heterointerfaces prepared by Van der Waals epitaxy.
In: Journal of Crystal Growth, pp. 439-443, 146, (1-4), ISSN 00220248,
[Online-Edition: http://dx.doi.org/10.1016/0022-0248(94)00504-4],
[Article]

Schlaf, R. and Louder, D. and Lang, O. and Pettenkofer, C. and Jaegermann, W. and Nebesny, K. and Lee, P. and Parkinson, B. A. and Armstrong, N. R. (1995):
Molecular beam epitaxy growth of thin films of SnS2 and SnSe2 on cleaved mica and the basal planes of single-crystal layered semiconductors: Reflection high-energy electron diffraction, low-energy electron diffraction, photoemission, and scanning tunneling microscopy/atomic force microscopy characterization.
In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, p. 1761, 13, (3), ISSN 07342101,
[Online-Edition: http://dx.doi.org/10.1116/1.579766],
[Article]

Lang, O. and Schlaf, R. and Tomm, Y. and Pettenkofer, C. and Jaegermann, W. (1994):
Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy: I. Growth conditions.
In: Journal of Applied Physics, p. 7805, 75, (12), ISSN 00218979,
[Online-Edition: http://dx.doi.org/10.1063/1.356562],
[Article]

Lang, O. and Tomm, Y. and Schlaf, R. and Pettenkofer, C. and Jaegermann, W. (1994):
Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy: II. Junction characterization.
In: Journal of Applied Physics, p. 7814, 75, (12), ISSN 00218979,
[Online-Edition: http://dx.doi.org/10.1063/1.356563],
[Article]

Jaegermann, W. and Pettenkofer, C. and Lang, O. and Schlaf, R. and Tiefenbacher, S. and Tomm, Y. (1994):
Thin film solar cells based on layered chalcogenides: Fundamentals and perspectives of van der Waals epitaxy.
In: Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC), 1, [Online-Edition: http://dx.doi.org/10.1109/WCPEC.1994.519975],
[Conference or Workshop Item]

Schlaf, R. and Tiefenbacher, S. and Lang, O. and Pettenkofer, C. and Jaegermann, W. (1994):
Van der Waals epitaxy of thin InSe films on MoTe2.
In: Surface Science, pp. L343-L347, 303, (1-2), ISSN 00396028,
[Online-Edition: http://dx.doi.org/10.1016/0039-6028(94)90610-6],
[Article]

Mayer, T. and Klein, Andreas and Lang, O. and Pettenkofer, C. and Jaegermann, W. (1992):
H2O adsorption on the layered chalcogenide semiconductors WSe2, InSe and GaSe.
In: Surface Science, pp. 909-914, 269-270, ISSN 00396028,
[Online-Edition: http://dx.doi.org/10.1016/0039-6028(92)91368-L],
[Article]

Lang, O. and Schlaf, R. and Tomm, Y. and Pettenkofer, C. and Jaegermann, W. (1992):
Van Der Waals Epitaxy of GaSe on WSe2.
In: MRS Proceedings, p. 291, 263, ISSN 1946-4274,
[Online-Edition: http://dx.doi.org/10.1557/PROC-263-291],
[Article]

This list was generated on Sat Sep 21 01:00:20 2019 CEST.