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Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy: II. Junction characterization

Lang, O. ; Tomm, Y. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. (1994):
Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy: II. Junction characterization.
In: Journal of Applied Physics, 75 (12), p. 7814. ISSN 00218979,
[Article]

Item Type: Article
Erschienen: 1994
Creators: Lang, O. ; Tomm, Y. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W.
Title: Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy: II. Junction characterization
Language: English
Journal or Publication Title: Journal of Applied Physics
Journal volume: 75
Number: 12
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 26 Apr 2015 21:42
Official URL: http://dx.doi.org/10.1063/1.356563
Identification Number: doi:10.1063/1.356563
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