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Electronic passivation of Si(111) by Ga–Se half-sheet termination

Fritsche, R. and Wisotzki, E. and Islam, A. B. M. O. and Thissen, A. and Klein, Andreas and Jaegermann, W. and Rudolph, R. and Tonti, D. and Pettenkofer, C. (2002):
Electronic passivation of Si(111) by Ga–Se half-sheet termination.
80, In: Applied Physics Letters, (8), pp. 1388-1390, ISSN 00036951, [Online-Edition: http://dx.doi.org/10.1063/1.1454228],
[Article]

Item Type: Article
Erschienen: 2002
Creators: Fritsche, R. and Wisotzki, E. and Islam, A. B. M. O. and Thissen, A. and Klein, Andreas and Jaegermann, W. and Rudolph, R. and Tonti, D. and Pettenkofer, C.
Title: Electronic passivation of Si(111) by Ga–Se half-sheet termination
Language: English
Journal or Publication Title: Applied Physics Letters
Volume: 80
Number: 8
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 21 Feb 2015 15:55
Official URL: http://dx.doi.org/10.1063/1.1454228
Identification Number: doi:10.1063/1.1454228
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