Schlaf, R. and Lang, R. and Parkinson, C. and Armstrong, N. R. and Pettenkofer, C. and Jaegermann, W. (1997):
Experimental determination of quantum dipoles at semiconductor heterojunctions prepared by van der Waals epitaxy.
In: Journal of vacuum science and technology A, 15pp. 1365-1370, [Article]

Schlaf, R. and Armstrong, N. R. and Parkinson, B. A. and Pettenkofer, C. and Jaegermann, W. (1997):
Van der Waals epitaxy of the layered semiconductors SnSe2 and SnS2: Morphology and growth modes.
In: Surface Science, 385 (1), pp. 1-14, ISSN 00396028,
[Online-Edition: http://dx.doi.org/10.1016/S0039-6028(97)00066-6],
[Article]

Schlaf, R. and Louder, D. and Lang, O. and Pettenkofer, C. and Jaegermann, W. and Nebesny, K. and Lee, P. and Parkinson, B. A. and Armstrong, N. R. (1995):
Molecular beam epitaxy growth of thin films of SnS2 and SnSe2 on cleaved mica and the basal planes of single-crystal layered semiconductors: Reflection high-energy electron diffraction, low-energy electron diffraction, photoemission, and scanning tunneling microscopy/atomic force microscopy characterization.
In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 13 (3), p. 1761, ISSN 07342101,
[Online-Edition: http://dx.doi.org/10.1116/1.579766],
[Article]