Schlaf, R. ; Lang, R. ; Parkinson, C. ; Armstrong, N. R. ; Pettenkofer, C. ; Jaegermann, W. (1997)
Experimental determination of quantum dipoles at semiconductor heterojunctions prepared by van der Waals epitaxy.
In: Journal of vacuum science and technology A, 15
doi: 10.1116/1.580543
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Schlaf, R. ; Armstrong, N. R. ; Parkinson, B. A. ; Pettenkofer, C. ; Jaegermann, W. (1997)
Van der Waals epitaxy of the layered semiconductors SnSe2 and SnS2: Morphology and growth modes.
In: Surface Science, 385 (1)
doi: 10.1016/S0039-6028(97)00066-6
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Schlaf, R. ; Louder, D. ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. ; Nebesny, K. ; Lee, P. ; Parkinson, B. A. ; Armstrong, N. R. (1995)
Molecular beam epitaxy growth of thin films of SnS2 and SnSe2 on cleaved mica and the basal planes of single-crystal layered semiconductors: Reflection high-energy electron diffraction, low-energy electron diffraction, photoemission, and scanning tunneling microscopy/atomic force microscopy characterization.
In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 13 (3)
doi: 10.1116/1.579766
Artikel, Bibliographie