TU Darmstadt / ULB / TUbiblio

Browsen nach Person

Ebene hoch
Gruppiere nach: Keine Gruppierung | Typ des Eintrags | Datum | Sprache
Anzahl der Einträge: 19.

Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. :
Band line-up of SnS2/SnSe2/SnS2 semiconductor quantum well prepared by an van der Waals epitaxy.
In: Journal of Applied Physics, 85 (9) pp. 6550-6556. ISSN 00218979
[Artikel], (1999)

Schlaf, R. ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. :
Band line-up of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Quantum dipole correction term of the electron affinity rule.
In: Journal of Applied Physics, 85 (5) pp. 2732-2753. ISSN 00218979
[Artikel], (1999)

Klein, Andreas ; Tomm, Y. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. ; Lux-Steiner, M. ; Bucher, E. :
Photovoltaic properties of WSe2 single crystals studied by photoelectron spectroscopy.
In: Solar Energy Materials and Solar Cells, 51 (2) pp. 181-191. ISSN 09270248
[Artikel], (1998)

Klein, Andreas ; Lang, O. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. :
Electronically decoupled InSe films prepared by Van der Waals epitaxy: transition from localized two-dimensional to delocalized states.
In: Physical Review Letters, 80 p. 361. ISSN 0031-9007
[Artikel], (1998)

Schlaf, R. ; Löher, T. ; Klein, Andreas ; Pettenkofer, C. ; Jaegermann, W. :
Band line-up of van der Waals epitaxy interfaces.
In: MRS Proceedings, 448 p. 469. ISSN 1946-4274
[Artikel], (1997)

Schlaf, R. ; Lang, R. ; Parkinson, C. ; Armstrong, N. R. ; Pettenkofer, C. ; Jaegermann, W. :
Experimental determination of quantum dipoles at semiconductor heterojunctions prepared by van der Waals epitaxy.
In: Journal of vacuum science and technology A, 15 pp. 1365-1370.
[Artikel], (1997)

Schlaf, R. ; Armstrong, N. R. ; Parkinson, B. A. ; Pettenkofer, C. ; Jaegermann, W. :
Van der Waals epitaxy of the layered semiconductors SnSe2 and SnS2: Morphology and growth modes.
[Online-Edition: http://dx.doi.org/10.1016/S0039-6028(97)00066-6]
In: Surface Science, 385 (1) pp. 1-14. ISSN 00396028
[Artikel], (1997)

Lang, O. ; Klein, Andreas ; Schlaf, R. ; Löher, T. ; Pettenkofer, C. ; Jaegermann, W. ; Chevy, A. :
InSe/GaSe heterointerfaces prepared by Van der Waals epitaxy.
[Online-Edition: http://dx.doi.org/10.1016/0022-0248(94)00504-4]
In: Journal of Crystal Growth, 146 (1-4) pp. 439-443. ISSN 00220248
[Artikel], (1995)

Schlaf, R. ; Louder, D. ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. ; Nebesny, K. ; Lee, P. ; Parkinson, B. A. ; Armstrong, N. R. :
Molecular beam epitaxy growth of thin films of SnS2 and SnSe2 on cleaved mica and the basal planes of single-crystal layered semiconductors: Reflection high-energy electron diffraction, low-energy electron diffraction, photoemission, and scanning tunneling microscopy/atomic force microscopy characterization.
[Online-Edition: http://dx.doi.org/10.1116/1.579766]
In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 13 (3) p. 1761. ISSN 07342101
[Artikel], (1995)

Lang, O. ; Schlaf, R. ; Tomm, Y. ; Pettenkofer, C. ; Jaegermann, W. :
Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy: I. Growth conditions.
[Online-Edition: http://dx.doi.org/10.1063/1.356562]
In: Journal of Applied Physics, 75 (12) p. 7805. ISSN 00218979
[Artikel], (1994)

Lang, O. ; Tomm, Y. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. :
Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy: II. Junction characterization.
[Online-Edition: http://dx.doi.org/10.1063/1.356563]
In: Journal of Applied Physics, 75 (12) p. 7814. ISSN 00218979
[Artikel], (1994)

Jaegermann, W. ; Pettenkofer, C. ; Lang, O. ; Schlaf, R. ; Tiefenbacher, S. ; Tomm, Y. :
Thin film solar cells based on layered chalcogenides: Fundamentals and perspectives of van der Waals epitaxy.
[Online-Edition: http://dx.doi.org/10.1109/WCPEC.1994.519975]
Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)
[Konferenz- oder Workshop-Beitrag], (1994)

Schlaf, R. ; Tiefenbacher, S. ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. :
Van der Waals epitaxy of thin InSe films on MoTe2.
[Online-Edition: http://dx.doi.org/10.1016/0039-6028(94)90610-6]
In: Surface Science, 303 (1-2) L343-L347. ISSN 00396028
[Artikel], (1994)

Schlaf, R. ; Klein, Andreas ; Pettenkofer, C. ; Jaegermann, W. :
Laterally inhomogeneous surface-potential distribution and photovoltage at clustered In/WSe2(0001) interfaces.
[Online-Edition: http://dx.doi.org/10.1103/PhysRevB.48.14242]
In: Physical Review B, 48 (19) pp. 14242-14252. ISSN 0163-1829
[Artikel], (1993)

Schellenberger, A. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. :
XPS and SXPS studies on in-situ prepared Na/InSe insertion compounds.
[Online-Edition: http://dx.doi.org/10.1016/0167-2738(93)90420-8]
In: Solid State Ionics, 66 (3-4) pp. 307-312. ISSN 01672738
[Artikel], (1993)

Schellenberger, A. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. :
Synchrotron induced surface photovoltage saturation at intercalated Na/WSe2 interfaces.
[Online-Edition: http://dx.doi.org/10.1103/PhysRevB.45.3538]
In: Physical Review B, 45 (7) pp. 3538-3545. ISSN 0163-1829
[Artikel], (1992)

Lang, O. ; Schlaf, R. ; Tomm, Y. ; Pettenkofer, C. ; Jaegermann, W. :
Van Der Waals Epitaxy of GaSe on WSe2.
[Online-Edition: http://dx.doi.org/10.1557/PROC-263-291]
In: MRS Proceedings, 263 p. 291. ISSN 1946-4274
[Artikel], (1992)

Schlaf, R. ; Sehnert, H. ; Pettenkofer, C. ; Jaegermann, W. :
Inhomogeneous Electric Potential Distributions Induced by in-Clusters Grown on p-WSe2(0001) Surfaces.
[Online-Edition: http://dx.doi.org/10.1557/PROC-221-137]
In: MRS Proceedings, 221 p. 137. ISSN 1946-4274
[Artikel], (1991)

Schellenberger, A. ; Schlaf, R. ; Mayer, T. ; Holub-Krappe, E. ; Pettenkofer, C. ; Jaegermann, W. ; Ditzinger, U. A. ; Neddermeyer, H. :
Na adsorption on the layered semiconductors SnS2 and WSe2.
[Online-Edition: http://dx.doi.org/10.1016/0167-2584(91)91124-F]
In: Surface Science Letters, 241 (3) L25-L29. ISSN 01672584
[Artikel], (1991)

Diese Liste wurde am Tue Sep 19 07:48:20 2017 CEST generiert.