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Number of items: 19.

Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. (1999):
Band line-up of SnS2/SnSe2/SnS2 semiconductor quantum well prepared by an van der Waals epitaxy.
85, In: Journal of Applied Physics, (9), pp. 6550-6556. American Institute of Physics, ISSN 00218979,
[Article]

Schlaf, R. ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. (1999):
Band line-up of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Quantum dipole correction term of the electron affinity rule.
85, In: Journal of Applied Physics, (5), pp. 2732-2753. ISSN 00218979,
[Article]

Klein, Andreas ; Tomm, Y. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. ; Lux-Steiner, M. ; Bucher, E. (1998):
Photovoltaic properties of WSe2 single crystals studied by photoelectron spectroscopy.
51, In: Solar Energy Materials and Solar Cells, (2), pp. 181-191. Elsevier, ISSN 09270248,
[Article]

Klein, Andreas ; Lang, O. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. (1998):
Electronically decoupled InSe films prepared by Van der Waals epitaxy: transition from localized two-dimensional to delocalized states.
80, In: Physical Review Letters, (2), pp. 361-364. American Physical Society (APS), ISSN 0031-9007, e-ISSN 1079-7114,
DOI: 10.1103/PhysRevLett.80.361,
[Article]

Schlaf, R. ; Löher, T. ; Klein, Andreas ; Pettenkofer, C. ; Jaegermann, W. (1997):
Band line-up of van der Waals epitaxy interfaces.
In: Materials Research Society: Symposium Proceedings. 448 (1997), S. 469-474, 448, In: MRS Proceedings, p. 469. ISSN 1946-4274,
[Article]

Schlaf, R. ; Lang, R. ; Parkinson, C. ; Armstrong, N. R. ; Pettenkofer, C. ; Jaegermann, W. (1997):
Experimental determination of quantum dipoles at semiconductor heterojunctions prepared by van der Waals epitaxy.
15, In: Journal of vacuum science and technology A, pp. 1365-1370. [Article]

Schlaf, R. ; Armstrong, N. R. ; Parkinson, B. A. ; Pettenkofer, C. ; Jaegermann, W. (1997):
Van der Waals epitaxy of the layered semiconductors SnSe2 and SnS2: Morphology and growth modes.
In: Surface Science, 385 (1), pp. 1-14. ISSN 00396028,
[Article]

Lang, O. ; Klein, Andreas ; Schlaf, R. ; Löher, T. ; Pettenkofer, C. ; Jaegermann, W. ; Chevy, A. (1995):
InSe/GaSe heterointerfaces prepared by Van der Waals epitaxy.
In: Journal of Crystal Growth, 146 (1-4), pp. 439-443. ISSN 00220248,
[Article]

Schlaf, R. ; Louder, D. ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. ; Nebesny, K. ; Lee, P. ; Parkinson, B. A. ; Armstrong, N. R. (1995):
Molecular beam epitaxy growth of thin films of SnS2 and SnSe2 on cleaved mica and the basal planes of single-crystal layered semiconductors: Reflection high-energy electron diffraction, low-energy electron diffraction, photoemission, and scanning tunneling microscopy/atomic force microscopy characterization.
In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 13 (3), p. 1761. ISSN 07342101,
[Article]

Lang, O. ; Schlaf, R. ; Tomm, Y. ; Pettenkofer, C. ; Jaegermann, W. (1994):
Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy: I. Growth conditions.
In: Journal of Applied Physics, 75 (12), p. 7805. ISSN 00218979,
[Article]

Lang, O. ; Tomm, Y. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. (1994):
Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy: II. Junction characterization.
In: Journal of Applied Physics, 75 (12), p. 7814. ISSN 00218979,
[Article]

Jaegermann, W. ; Pettenkofer, C. ; Lang, O. ; Schlaf, R. ; Tiefenbacher, S. ; Tomm, Y. (1994):
Thin film solar cells based on layered chalcogenides: Fundamentals and perspectives of van der Waals epitaxy.
1, In: Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC), pp. 357-360,
[Conference or Workshop Item]

Schlaf, R. ; Tiefenbacher, S. ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. (1994):
Van der Waals epitaxy of thin InSe films on MoTe2.
In: Surface Science, 303 (1-2), pp. L343-L347. ISSN 00396028,
[Article]

Schlaf, R. ; Klein, Andreas ; Pettenkofer, C. ; Jaegermann, W. (1993):
Laterally inhomogeneous surface-potential distribution and photovoltage at clustered In/WSe2(0001) interfaces.
In: Physical Review B, 48 (19), pp. 14242-14252. ISSN 0163-1829,
[Article]

Schellenberger, A. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. (1993):
XPS and SXPS studies on in-situ prepared Na/InSe insertion compounds.
In: Solid State Ionics, 66 (3-4), pp. 307-312. ISSN 01672738,
[Article]

Schellenberger, A. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. (1992):
Synchrotron induced surface photovoltage saturation at intercalated Na/WSe2 interfaces.
In: Physical Review B, 45 (7), pp. 3538-3545. ISSN 0163-1829,
[Article]

Lang, O. ; Schlaf, R. ; Tomm, Y. ; Pettenkofer, C. ; Jaegermann, W. (1992):
Van Der Waals Epitaxy of GaSe on WSe2.
In: MRS Proceedings, 263, p. 291. ISSN 1946-4274,
[Article]

Schlaf, R. ; Sehnert, H. ; Pettenkofer, C. ; Jaegermann, W. (1991):
Inhomogeneous Electric Potential Distributions Induced by in-Clusters Grown on p-WSe2(0001) Surfaces.
In: MRS Proceedings, 221, p. 137. ISSN 1946-4274,
[Article]

Schellenberger, A. ; Schlaf, R. ; Mayer, T. ; Holub-Krappe, E. ; Pettenkofer, C. ; Jaegermann, W. ; Ditzinger, U. A. ; Neddermeyer, H. (1991):
Na adsorption on the layered semiconductors SnS2 and WSe2.
In: Surface Science Letters, 241 (3), pp. L25-L29. ISSN 01672584,
[Article]

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