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Perspectives of the concept of van der Waals epitaxy: growth of lattice mismatched GaSe (0001) films on Si (111), Si (110), and Si (100)

Jaegermann, W. ; Rudolph, R. ; Klein, Andreas ; Pettenkofer, C. (2000):
Perspectives of the concept of van der Waals epitaxy: growth of lattice mismatched GaSe (0001) films on Si (111), Si (110), and Si (100).
380, In: Thin Solid Films, (1-2), pp. 276-281. ISSN 00406090,
[Article]

Item Type: Article
Erschienen: 2000
Creators: Jaegermann, W. ; Rudolph, R. ; Klein, Andreas ; Pettenkofer, C.
Title: Perspectives of the concept of van der Waals epitaxy: growth of lattice mismatched GaSe (0001) films on Si (111), Si (110), and Si (100)
Language: English
Journal or Publication Title: Thin Solid Films
Volume: 380
Number: 1-2
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 19 Nov 2008 16:24
Identification Number: doi:10.1016/S0040-6090(00)01523-6
License: [undefiniert]
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