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Number of items: 20.

Jaeckel, B. and Gassenbauer, Y. and Jaegermann, W. and Tomm, Y. (2005):
AFM tip induced formation of nanometer scale structures on WSe2 under defined conditions.
597, 1-3In: Proceedings of the final Workshop of the Priority Program Fundamentals of Electrochemical Nanotechnology of the DFG, pp. 65-79, [Conference or Workshop Item]

Kraft, D. and Weiler, U. and Tomm, Y. and Thissen, A. and Klein, Andreas and Jaegermann, W. (2003):
Alternative back contacts for CdTe solar cells: a photoemission study of the VSe2/CdTe and TiSe2/CdTe interface formation.
In: Thin Solid Films, 431-432pp. 382-386, ISSN 00406090,
[Online-Edition: http://dx.doi.org/10.1016/S0040-6090(03)00254-2],
[Article]

Löher, T. and Tomm, Y. and Pettenkofer, C. and Klein, Andreas and Jaegermann, W. (2000):
Structural dipoles at interfaces between polar II-VI semiconductors CdS and CdTe and non-polar layered transition metal dichalcogenide semiconductors MoTe2and WSe2.
In: Semiconductor Science and Technology, 15 (6), pp. 514-522, ISSN 0268-1242,
[Online-Edition: http://dx.doi.org/10.1088/0268-1242/15/6/305],
[Article]

Gunst, S. and Klein, Andreas and Jaegermann, W. and Tomm, Y. and Crawack, H. J. and Jungblut, H. (2000):
Intercalation and deintercalation of transition metal dichalcogenides: Nanostructuring of intercalated phases by scanning probe microscopy.
In: Ionics, 6 (3-4), pp. 180-186, ISSN 0947-7047,
[Article]

Rudolph, R. and Klein, Andreas and Tomm, Y. and Pettenkofer, C. and Jaegermann, W. (2000):
Van der Waals-Xenotaxy: Oriented growth of hexagonal GaSe(0001) on rectangular GaAs(110).
In: Applied Physics Letters, 76 (9), pp. 1101-1103, ISSN 00036951,
[Article]

Klein, Andreas and Tomm, Y. and Schlaf, R. and Pettenkofer, C. and Jaegermann, W. and Lux-Steiner, M. and Bucher, E. (1998):
Photovoltaic properties of WSe2 single crystals studied by photoelectron spectroscopy.
In: Solar Energy Materials and Solar Cells, 51 (2), pp. 181-191, ISSN 09270248,
[Article]

Klein, Andreas and Löher, T. and Tomm, Y. and Pettenkofer, C. and Jaegermann, W. (1997):
Band line-up between CdS and UHV-cleaved CuInS2 single crystals.
In: Applied Physics Letters, 70pp. 1299-1301, ISSN 00036951,
[Online-Edition: http://dx.doi.org/10.1063/1.118517],
[Article]

Jiang, L. and Jaegermann, W. and Pettenkofer, C. and Tomm, Y. and Iyoda, T. and Hashimoto, K. and Fujishima, A. (1997):
Reversible Cu deintercalation on layered chalcogenide surfaces with scanning probe techniques: Towards nanometer scale storage devices.
In: Advanced Materials, 9pp. 578-581, ISSN 09359648,
[Article]

Löher, T. and Klein, Andreas and Schaar-Gabriel, E. and Rudolph, R. and Tomm, Y. and Giersig, M. and Pettenkofer, C. and Jaegermann, W. (1997):
Van der Waals epitaxy of II-VI semiconductors on layered chalcogenide (0001) substrates: Towards buffer layers for lattice mismatched systems?
In: MRS Proceedings, 441p. 597, ISSN 1946-4274,
[Article]

Löher, T. and Tomm, Y. and Klein, Andreas and Su, D. and Pettenkofer, C. and Jaegermann, W. (1996):
Highly oriented layers of the three-dimensional semiconductor CdTe on the two-dimensional layered semiconductors MoTe2 and WSe2.
In: Journal of Applied Physics, 80 (10), p. 5718, ISSN 00218979,
[Online-Edition: http://dx.doi.org/10.1063/1.363624],
[Article]

Jaegermann, W. and Pettenkofer, C. and Henrion, O. and Tomm, Y. and Papageorgopoulos, C. A. and Kamaratos, M. and Papageorgopoulos, D. C. (1996):
Surface science investigations of Cu intercalation in 1T TaSe2 and TiSe2 and its deintercalation by adsorbed Br2.
In: Ionics, 2 (3-4), pp. 201-207, ISSN 0947-7047,
[Online-Edition: http://dx.doi.org/10.1007/BF02376022],
[Article]

Schellenberger, A. and Jaegermann, W. and Pettenkofer, C. and Tomm, Y. (1995):
Electronic structure and electrochemical potential of electrons during alkali intercalation in layered materials.
In: Ionics, 1 (2), pp. 115-124, ISSN 0947-7047,
[Online-Edition: http://dx.doi.org/10.1007/BF02388668],
[Article]

Löher, T. and Tomm, Y. and Pettenkofer, C. and Giersig, M. and Jaegermann, W. (1995):
Epitaxial films of the 3D semiconductor CdS on the 2D layered substrate MX2 prepared by Van der Waals epitaxy.
In: Journal of Crystal Growth, 146 (1-4), pp. 408-413, ISSN 00220248,
[Online-Edition: http://dx.doi.org/10.1016/0022-0248(94)00505-2],
[Article]

Jaegermann, W. and Pettenkofer, C. and Schellenberger, A. and Papageorgopoulos, C. A. and Kamaratos, M. and Vlachos, D. and Tomm, Y. (1994):
Photoelectron spectroscopy of UHV in situ intercalated Li/TiSe2: Experimental proof of the rigid band model.
In: Chemical Physics Letters, 221 (5-6), pp. 441-446, ISSN 00092614,
[Online-Edition: http://dx.doi.org/10.1016/0009-2614(94)00286-X],
[Article]

Lang, O. and Schlaf, R. and Tomm, Y. and Pettenkofer, C. and Jaegermann, W. (1994):
Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy: I. Growth conditions.
In: Journal of Applied Physics, 75 (12), p. 7805, ISSN 00218979,
[Online-Edition: http://dx.doi.org/10.1063/1.356562],
[Article]

Lang, O. and Tomm, Y. and Schlaf, R. and Pettenkofer, C. and Jaegermann, W. (1994):
Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy: II. Junction characterization.
In: Journal of Applied Physics, 75 (12), p. 7814, ISSN 00218979,
[Online-Edition: http://dx.doi.org/10.1063/1.356563],
[Article]

Bronold, M. and Tomm, Y. and Jaegermann, W. (1994):
Surface states on cubic d-band semiconductor pyrite (FeS2).
In: Surface Science, 314 (3), pp. L931-L936, ISSN 00396028,
[Online-Edition: http://dx.doi.org/10.1016/0039-6028(94)90230-5],
[Article]

Jaegermann, W. and Pettenkofer, C. and Lang, O. and Schlaf, R. and Tiefenbacher, S. and Tomm, Y. (1994):
Thin film solar cells based on layered chalcogenides: Fundamentals and perspectives of van der Waals epitaxy.
1In: Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC), pp. 357-360, [Online-Edition: http://dx.doi.org/10.1109/WCPEC.1994.519975],
[Conference or Workshop Item]

Löher, T. and Tomm, Y. and Pettenkofer, C. and Jaegermann, W. (1994):
Van der Waals epitaxy of three-dimensional CdS on the two-dimensional layered substrate MoTe2(0001).
In: Applied Physics Letters, 65 (5), p. 555, ISSN 00036951,
[Online-Edition: http://dx.doi.org/10.1063/1.112294],
[Article]

Lang, O. and Schlaf, R. and Tomm, Y. and Pettenkofer, C. and Jaegermann, W. (1992):
Van Der Waals Epitaxy of GaSe on WSe2.
In: MRS Proceedings, 263p. 291, ISSN 1946-4274,
[Online-Edition: http://dx.doi.org/10.1557/PROC-263-291],
[Article]

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