TU Darmstadt / ULB / TUbiblio

Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy: I. Growth conditions

Lang, O. and Schlaf, R. and Tomm, Y. and Pettenkofer, C. and Jaegermann, W. (1994):
Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy: I. Growth conditions.
In: Journal of Applied Physics, 75 (12), p. 7805, ISSN 00218979,
[Online-Edition: http://dx.doi.org/10.1063/1.356562],
[Article]

Item Type: Article
Erschienen: 1994
Creators: Lang, O. and Schlaf, R. and Tomm, Y. and Pettenkofer, C. and Jaegermann, W.
Title: Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy: I. Growth conditions
Language: English
Journal or Publication Title: Journal of Applied Physics
Volume: 75
Number: 12
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 26 Apr 2015 21:41
Official URL: http://dx.doi.org/10.1063/1.356562
Identification Number: doi:10.1063/1.356562
Export:
Suche nach Titel in: TUfind oder in Google
Send an inquiry Send an inquiry

Options (only for editors)
Show editorial Details Show editorial Details