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Band line-up of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Quantum dipole correction term of the electron affinity rule

Schlaf, R. and Lang, O. and Pettenkofer, C. and Jaegermann, W. (1999):
Band line-up of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Quantum dipole correction term of the electron affinity rule.
In: Journal of Applied Physics, 85 (5), pp. 2732-2753, ISSN 00218979,
[Article]

Item Type: Article
Erschienen: 1999
Creators: Schlaf, R. and Lang, O. and Pettenkofer, C. and Jaegermann, W.
Title: Band line-up of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Quantum dipole correction term of the electron affinity rule
Language: English
Journal or Publication Title: Journal of Applied Physics
Volume: 85
Number: 5
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Surface Science
Date Deposited: 19 Nov 2008 15:54
Identification Number: doi:10.1063/1.369590
License: [undefiniert]
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