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Number of items: 10.

Fritsche, R. ; Wisotzki, E. ; Islam, A. B. M. O. ; Thissen, A. ; Klein, Andreas ; Jaegermann, Wolfram ; Rudolph, R. ; Tonti, D. ; Pettenkofer, C. (2021):
Electronic passivation of Si(111) by Ga–Se half-sheet termination. (Publisher's Version)
In: Applied Physics Letters, 80 (8), pp. 1388-1390. AIP Publishing, ISSN 0003-6951, e-ISSN 1077-3118,
DOI: 10.26083/tuprints-00019835,
[Article]

Rudolph, R. ; Tomm, Y. ; Pettenkofer, C. ; Klein, Andreas ; Jaegermann, Wolfram (2021):
Van der Waals xenotaxy: Oriented growth of hexagonal GaSe(001) on rectangular GaAs(110). (Publisher's Version)
In: Applied Physics Letters, 76 (9), pp. 1101-1103. AIP Publishing, ISSN 0003-6951, e-ISSN 1077-3118,
DOI: 10.26083/tuprints-00019887,
[Article]

Rudolph, R. ; Pettenkofer, C. ; Bostwick, A. A. ; Adams, J. A. ; Ohuchi, F. ; Olmstead, M. A. ; Jaeckel, B. ; Klein, Andreas ; Jaegermann, W. (2005):
Electronic structure of the Si(111): GaSe van der Waals-like surface termination.
In: New Journal of Physics, 7, pp. 108/1-108/20. ISSN 1367-2630,
[Article]

Fritsche, R. ; Wisotzki, E. ; Thißen, A. ; Islam, A. B. M. O. ; Klein, Andreas ; Jaegermann, W. ; Rudolph, R. ; Tonti, D. ; Pettenkofer, C. (2002):
Preparation of a Si(111):GaSe van der Waals surface termination by selenization of a monolayer Ga on Si(111).
In: Surface Science, 515 (2-3), pp. 296-304. ISSN 00396028,
[Article]

Fritsche, R. ; Wisotzki, E. ; Islam, A. B. M. O. ; Thissen, A. ; Klein, Andreas ; Jaegermann, W. ; Rudolph, R. ; Tonti, D. ; Pettenkofer, C. (2002):
Electronic passivation of Si(111) by Ga–Se half-sheet termination.
In: Applied Physics Letters, 80 (8), pp. 1388-1390. ISSN 00036951,
[Article]

Jaegermann, W. ; Rudolph, R. ; Klein, Andreas ; Pettenkofer, C. (2000):
Perspectives of the concept of van der Waals epitaxy: growth of lattice mismatched GaSe (0001) films on Si (111), Si (110), and Si (100).
380, In: Thin Solid Films, (1-2), pp. 276-281. ISSN 00406090,
[Article]

Rudolph, R. ; Pettenkofer, C. ; Klein, Andreas ; Jaegermann, W. (2000):
Chemical passivation of Si(111) capped by a thin GaSe layer.
In: Applied Surface Science, 167 (1-2), pp. 122-124. ISSN 01694332,
[Article]

Rudolph, R. ; Pettenkofer, C. ; Klein, Andreas ; Jaegermann, W. (2000):
Van der Waals-Xenotaxy: Growth of GaSe(0001) on low index silicon surfaces.
166, In: Applied Surface Science, (1-4), pp. 437-441. Elsevier, ISSN 0169-4332, e-ISSN 1873-5584,
DOI: 10.1016/S0169-4332(00)00464-5,
[Article]

Rudolph, R. ; Klein, Andreas ; Tomm, Y. ; Pettenkofer, C. ; Jaegermann, W. (2000):
Van der Waals-Xenotaxy: Oriented growth of hexagonal GaSe(0001) on rectangular GaAs(110).
76, In: Applied Physics Letters, (9), pp. 1101-1103. American Institute of Physics (AIP), ISSN 0003-6951, e-ISSN 1077-3118,
DOI: 10.1063/1.125951,
[Article]

Löher, T. ; Klein, Andreas ; Schaar-Gabriel, E. ; Rudolph, R. ; Tomm, Y. ; Giersig, M. ; Pettenkofer, C. ; Jaegermann, W. (1997):
Van der Waals epitaxy of II-VI semiconductors on layered chalcogenide (0001) substrates: Towards buffer layers for lattice mismatched systems?
In: Materials Research Society: Symposium Proceedings. 441 (1997), S. 597-601, 441, In: MRS Proceedings, p. 597. ISSN 1946-4274,
[Article]

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