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Number of items: 8.

Rudolph, R. and Pettenkofer, C. and Bostwick, A. A. and Adams, J. A. and Ohuchi, F. and Olmstead, M. A. and Jaeckel, B. and Klein, Andreas and Jaegermann, W. (2005):
Electronic structure of the Si(111): GaSe van der Waals-like surface termination.
7, In: New Journal of Physics, pp. 108/1-108/20, ISSN 1367-2630, [Article]

Fritsche, R. and Wisotzki, E. and Thißen, A. and Islam, A. B. M. O. and Klein, Andreas and Jaegermann, W. and Rudolph, R. and Tonti, D. and Pettenkofer, C. (2002):
Preparation of a Si(111):GaSe van der Waals surface termination by selenization of a monolayer Ga on Si(111).
515, In: Surface Science, (2-3), pp. 296-304, ISSN 00396028, [Online-Edition: http://dx.doi.org/10.1016/S0039-6028(02)01851-4],
[Article]

Fritsche, R. and Wisotzki, E. and Islam, A. B. M. O. and Thissen, A. and Klein, Andreas and Jaegermann, W. and Rudolph, R. and Tonti, D. and Pettenkofer, C. (2002):
Electronic passivation of Si(111) by Ga–Se half-sheet termination.
80, In: Applied Physics Letters, (8), pp. 1388-1390, ISSN 00036951, [Online-Edition: http://dx.doi.org/10.1063/1.1454228],
[Article]

Jaegermann, W. and Rudolph, R. and Klein, Andreas and Pettenkofer, C. (2000):
Perspectives of the concept of van der Waals epitaxy: growth of lattice mismatched GaSe (0001) films on Si (111), Si (110), and Si (100).
380, In: Thin Solid Films, (1-2), pp. 276-281, ISSN 00406090, [Article]

Rudolph, R. and Pettenkofer, C. and Klein, Andreas and Jaegermann, W. (2000):
Chemical passivation of Si(111) capped by a thin GaSe layer.
167, In: Applied Surface Science, (1-2), pp. 122-124, ISSN 01694332, [Online-Edition: http://dx.doi.org/10.1016/S0169-4332(00)00515-8],
[Article]

Rudolph, R. and Pettenkofer, C. and Klein, Andreas and Jaegermann, W. (2000):
Van der Waals-Xenotaxy: Growth of GaSe(0001) on low index silicon surfaces.
166, In: Applied Surface Science, (1-4), pp. 437-441, ISSN 01694332, [Article]

Rudolph, R. and Klein, Andreas and Tomm, Y. and Pettenkofer, C. and Jaegermann, W. (2000):
Van der Waals-Xenotaxy: Oriented growth of hexagonal GaSe(0001) on rectangular GaAs(110).
76, In: Applied Physics Letters, (9), pp. 1101-1103, ISSN 00036951, [Article]

Löher, T. and Klein, Andreas and Schaar-Gabriel, E. and Rudolph, R. and Tomm, Y. and Giersig, M. and Pettenkofer, C. and Jaegermann, W. (1997):
Van der Waals epitaxy of II-VI semiconductors on layered chalcogenide (0001) substrates: Towards buffer layers for lattice mismatched systems?
441, In: MRS Proceedings, p. 597, ISSN 1946-4274, [Article]

This list was generated on Tue Jan 21 01:18:13 2020 CET.