Evtukh, Anatoliy ; Hartnagel, Hans ; Yilmazoglu, Oktay ; Mimura, Hidenori ; Pavlidis, Dimitris (2015)
Quantum Electron Sources for High Frequency Applications.
Buch, Bibliographie

Yilmazoglu, Oktay ; Evtukh, Anatoli ; Al-Daffaie, Shihab ; Biethan, Jens-Peter ; Pavlidis, Dimitris ; Litovchenko, Vladimir ; Hartnagel, Hans L. (2014)
Electron field emission from nanostructured semiconductors under photo illumination.
In: Turkish Journal of Physics, 38 (3)
Artikel, Bibliographie

Schneider, Jörg J. ; Schlaak, Helmut F. ; Pavlidis, Dimitris ; Küppers, Franko ; Ensinger, Wolfgang (2012)
Elektromechanische Sensoren mit eindimensionalen Nanoobjekten.
Konferenzveröffentlichung, Bibliographie

Yilmazoglu, Oktay ; Mutamba, Kabula ; Pavlidis, Dimitris ; Karduman, Tamer (2010)
Gunn diode.
Norm, Patent, Standard, Bibliographie

Biethan, Jens-Peter ; Considine, Laurence ; Pavlidis, Dimitris (2008)
Epitaxial Growth of ZnO Whiskers on (100)-Silicon by Metalorganic Chemical Vapor Deposition.
Konferenzveröffentlichung, Bibliographie

Sigmund, Jochen ; Zogal, Karolina ; Lampin, J. F. ; Ivannikov, V. ; Sydlo, Cezary ; Feiginov, Michael N. ; Pavlidis, Dimitris ; Meissner, Peter ; Hartnagel, Hans L. (2007)
Low-temperature grown GaAsSb with sub-picosecond photocarrier lifetime for continuous-wave terahertz applications.
Konferenzveröffentlichung, Bibliographie

Yilmazoglu, Oktay ; Hartnagel, Hans L. ; Pavlidis, Dimitris ; Evtukh, A. ; Litovchenko, V. ; Semenenko, M. ; Gorbanyuk, T. ; Grigoriev, A. (2007)
Pecularities of electron field emission from nanostructured GaN and AlGaN.
Konferenzveröffentlichung, Bibliographie

Cho, Eunjung ; Pavlidis, Dimitris ; Zhao, Guangyuan ; Hubbard, Seth M. ; Schwank, Johannes (2006)
Improvement of CO sensitivity in GaN-based gas sensors.
In: IEICE Transactions C: IEICE Transactions on Electronics E, 89 (7)
doi: 10.1093/ietele/e89-c.7.1047
Artikel, Bibliographie

Yilmazoglu, Oktay ; Mutamba, Kabula ; Pavlidis, Dimitris ; Mbarga, Marie Rose (2006)
Strain sensitivity of AlGaN/GaN HEMT structures for sensing applications.
In: IEICE Transactions C: IEICE Transactions on Electronics E, 89 (7)
doi: 10.1093/ietele/e89-c.7.1037
Artikel, Bibliographie

Seo, S. ; Zhao, G. Y. ; Pavlidis, Dimitris ; Karaduman, T. ; Yilmazoglu, O. (2006)
Fabrication and DC Characterization of AlxGal-xN/GaN Superlattice Diodes for Millimeter Wave Generation.
Konferenzveröffentlichung, Bibliographie

Zhu, Xi. ; Wang, J. ; Pavlidis, Dimitris (2006)
First InP/GaAsSb/InP DHBT Ka-band MMIC Oscillator.
Konferenzveröffentlichung, Bibliographie

Cho, E. ; Pavlidis, Dimitris ; Seo, S. ; Jatta, Sandro ; Koegel, Benjamin ; Meissner, Peter (2006)
GaN/Air gap based micro opto electro mechanical fabry-perot filters.
Konferenzveröffentlichung, Bibliographie

Zhu, X. ; Wang, J. ; Pavlidis, Dimitris ; Hsu, S. (2006)
InP/GaAsSb/InP DHBT Technology and its Application to MM-Wave Integrated Oscillators.
Konferenzveröffentlichung, Bibliographie

Valizadeh, Pouya ; Pavlidis, Dimitris (2006)
Low-frequency noise-based degradation prediction of AlxGa1-xN/GaN MODFETs.
In: IEEE Transactions on Device and Materials Reliability, 6
Artikel, Bibliographie

Wang, J. ; Zhu, X. ; Pavlidis, Dimitris (2006)
Low-power InP/GaAsSb/InP DHBT cascode transimpedance amplifier with GBP/P-dc of 7.2 GHz/mW.
In: Electronics Letters, 42
Artikel, Bibliographie

Mutamba, Kabula ; Yilmazoglu, Oktay ; Sydlo, Cezary ; Mir, Mostafa ; Hubbard, Seth ; Zhao, G. ; Daumiller, Ingo ; Pavlidis, Dimitris (2006)
Technology aspects of GaN-based diodes for high-field operation.
In: Superlatices and Microstructures, 40
Artikel, Bibliographie

Mutamba, K. ; Yilmazoglu, Oktay ; Cojocari, Oleg ; Sydlo, Cezary ; Pavlidis, Dimitris ; Hartnagel, Hans L. (2006)
Technology of Wide-Bandgap Diode Struvtures for High Frequency Operation.
Konferenzveröffentlichung, Bibliographie

Zhao, G. ; Hubbard, S. M. ; Pavlidis, Dimitris (2004)
Yellow luminescence centers of GaN.
In: Japanese Journal of Applied Physics, 43, Part 1 (5A)
doi: 10.1143/JJAP.43.2471
Artikel, Bibliographie

Pavlidis, Dimitris (2004)
Composants nitrures pour applications THz.
Konferenzveröffentlichung, Bibliographie

Behtash, R. ; Tobler, H. ; Berlec, F.-J. ; Ziegler, V. ; Leier, H. ; Adelseck, B. ; Martin, T. ; Balmer, R. S. ; Pavlidis, Dimitris ; Jansen, R. H. ; Neuburger, M. ; Schumacher, H. (2004)
Coplanar AlGaN/GaN HEMT power amplifier MMIC at x-band.
Konferenzveröffentlichung, Bibliographie

Zhu, X. ; Pavlidis, Dimitris ; Zhao, G. ; Han, B.-K. ; Wibowo, A. ; Pan, N. (2004)
First power demonstration of InP/GaAsSb/InP double HBTs.
Konferenzveröffentlichung, Bibliographie

Pavlidis, Dimitris (2004)
GaN THz electronics.
Konferenzveröffentlichung, Bibliographie

Hubbard, S. M. ; Zhao, G. ; Pavlidis, Dimitris ; Cho, E. ; Sutton, W. (2004)
Optimization of GaN channel conductivity in AlGaN/GaN HFET structures grown by MOVPE.
Konferenzveröffentlichung, Bibliographie

Litovchenko, V. G. ; Evtukh, A. A. ; Kryuchenko, Yu. ; Goncharuk, N. M. ; Yilmazoglu, Oktay ; Mutamba, Kabula ; Hartnagel, Hans L. ; Pavlidis, Dimitris (2004)
Quantum size resonance tunneling in the field emission phenomenon.
In: Journal of applied physics, 96
Artikel, Bibliographie

Pavlidis, Dimitris (2004)
Recent advances in III-V nitride electron devices.
In: Technical digest / IEDM, IEEE International Electron Devices Meeting 2004 : San Francisco, CA, December 13 - 15, 2004 ; 50th annual meeting / sponsored by Electron Devices Society of IEEE.- Piscataway, NJ : IEEE Operations Center, 2004.-1085 S.-ISBN: 0-78
Artikel, Bibliographie

Litvinov, V. I. ; Manasson, A. ; Pavlidis, Dimitris (2004)
Short-period intrinsic stark GaN/AlGaN-superlattice as a Bloch oscillator.
In: Applied physics letters, 85
Artikel, Bibliographie

Pavlidis, Dimitris (2004)
GaN negative differential resistance components with terahertz operation capability : from fundamentals to devices.
In: Optoelectronic devices : III-nitrides
Buchkapitel, Bibliographie

Yilmazoglu, Oktay ; Pavlidis, Dimitris ; Litvin, Yu. M. ; Hubbard, S. M. ; Tiginyanu, I. M. ; Mutamba, Kabula ; Hartnagel, Hans L. ; Litovchenko, V. G. ; Evtukh, A. A. (2003)
Field emission from quantum size GaN structures.
In: Applied Surface Science, 220 (1-4)
doi: 10.1016/S0169-4332(03)00750-5
Artikel, Bibliographie

Syrbu, N. N. ; Tiginyanu, I. M. ; Ursaki, V. V. ; Zalamai, V. V. ; Popa, V. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003)
Free excitons in strained MOCVD-grown GaN layers.
In: MRS Internet Journal of Nitride Semiconductor Research, 8 (1)
doi: 10.1557/S1092578300000442
Artikel, Bibliographie

Zhu, X. ; Pavlidis, Dimitris ; Zhao, G. ; Bove, P. ; Lahrèche, H. ; Langer, R. (2003)
First microwave characteristics of InGaAlAs/GaAsSb/InP double HBTs.
In: IEICE Transactions C: IEICE Transactions on Electronics, 86 (10)
Artikel, Bibliographie

Zhao, G. Y. ; Sutton, W. ; Pavlidis, Dimitris ; Piner, E. ; Schwank, J. W. ; Hubbard, S. M. (2003)
A novel Pt-AlGaN/GaN heterostructure Schottky diode gas sensor on Si.
In: IEICE Transactions C: IEICE Transactions on Electronics, 86 (10)
Artikel, Bibliographie

Ursaki, V. V. ; Tiginyanu, I. M. ; Zalamai, V. V. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003)
Optical characterization of AlN/GaN heterostructure.
In: Journal of Applied Physics, 94 (8)
doi: 10.1063/1.1609048
Artikel, Bibliographie

Hsu, S. S. H. ; Pavlidis, Dimitris (2003)
A comparison of low frequency noise characteristics and noise sources in NPN and PNP InP-based heterojunction bipolar transistors.
In: IEEE Transactions on Electron Devices, 50 (9)
doi: 10.1109/TED.2003.815367
Artikel, Bibliographie

Ursaki, V. V. ; Tiginyanu, I. M. ; Ricci, P. C. ; Anedda, A. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003)
Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation.
In: Journal of Applied Physics, 94 (6)
doi: 10.1063/1.1604950
Artikel, Bibliographie

Tiginyanu, I. M. ; Ursaki, V. V. ; Zalamai, V. V. ; Langa, S. ; Hubbard, S. M. ; Pavlidis, Dimitris ; Föll, H. (2003)
Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching.
In: Applied Physics Letters, 83 (8)
doi: 10.1063/1.1605231
Artikel, Bibliographie

Litovchenko, V. G. ; Evtukh, A. A. ; Litvin, Yu. M. ; Goncharuk, N. M. ; Hartnagel, Hans L. ; Yilmazoglu, Oktay ; Pavlidis, Dimitris (2003)
Peculiarities of the electron field emission from quantum-size structures.
In: Applied Surface Science, 215 (1-4)
doi: 10.1016/S0169-4332(03)00283-6
Artikel, Bibliographie

Pavlidis, Dimitris ; Hubbard, S. M. ; Hsu, S. S. H. ; Seo, S. (2003)
AlGaN/GaN and AlN/GaN heterostructure devices : a possible device technology for high RF power wireless transmission.
Konferenzveröffentlichung, Bibliographie

Mortazawi, A. ; Pavlidis, Dimitris (2003)
AlGaN/GaN heterostructure field effect transistor free-space combining oscillator arrays : an approach for solar power conversion to high RF power for wireless transmission.
Konferenzveröffentlichung, Bibliographie

Hsu, S. H. ; Pavlidis, Dimitris (2003)
Analysis and modeling of dispersion characteristics in AlGaN/GaN MODFETs.
Konferenzveröffentlichung, Bibliographie

Siah, E. S. ; Volakis, J. L. ; Pavlidis, Dimitris ; Liepa, V. V. (2003)
Electromagnetic analysis of plane wave illumination effects onto passive and active circuit topologies.
In: IEEE Antennas and Wireless Propagation Letters, 2
doi: 10.1109/LAWP.2003.819691
Artikel, Bibliographie

Valizadeh, P. ; Alekseev, E. ; Pavlidis, Dimitris ; Yun, F. ; Morkoc, H. (2003)
Enhancement-mode AlGal-xN/GaN modulation doped field effect transistors.
Konferenzveröffentlichung, Bibliographie

Zhu, X. ; Pavlidis, Dimitris ; Zhao, G. (2003)
First high-frequency amd power demonstration of InGaAlAs/GaAsSb/InP double HBTs.
Konferenzveröffentlichung, Bibliographie

Sutton, W. ; Pavlidis, Dimitris ; Lahrèche, H. ; Damilano, B. ; Langer, R. (2003)
Large signal properties of AlGaN/GaN HEMTs on high resistivity substrates grown by MBE.
Konferenzveröffentlichung, Bibliographie

Valizadeh, P. ; Pavlidis, Dimitris (2003)
Low frequency noise-based monitoring of the effects of RF and DC stress on AlGaN/GaN MODFETs.
Konferenzveröffentlichung, Bibliographie

Siah, E. S. ; Volakis, J. L. ; Pavlidis, Dimitris ; Liepa, V. V. (2003)
Plane wave illumination effects onto circuit topologies.
Konferenzveröffentlichung, Bibliographie

Wood, C. E. C. ; Pavlidis, Dimitris (2003)
Recent advantages, remaining challenges in wide bandgap semiconductors.
Konferenzveröffentlichung, Bibliographie

Ursaki, V. V. ; Tiginyanu, I. M. ; Syrbu, N. N. ; Zalamai, V. V. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003)
Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures.
In: Semiconductor science and technology, 18
Artikel, Bibliographie

Yilmazoglu, Oktay ; Pavlidis, Dimitris ; Litvin, Yu. M. ; Hubbard, S. M. ; Tiginyanu, I. ; Mutamba, Kabula ; Hartnagel, Hans L. ; Litovchenko, V. G. ; Evtukh, A. A. (2002)
Field emission from quantum size GaN whiskers.
Konferenzveröffentlichung, Bibliographie

Dehé, Alfons ; Pavlidis, Dimitris ; Hong, K. S. ; Hartnagel, Hans L. (1997)
InGaAs/InP thermoelectric infrared sensor utilizing surface bulk micromachining technology.
In: IEEE Transactions on Electron Devices, 44 (7)
doi: 10.1109/16.595931
Artikel, Bibliographie

Dehé, Alfons ; Hartnagel, Hans L. ; Pavlidis, Dimitris ; Hong, Kyushik ; Kuphal, E. (1996)
Properties of InGaAs/InP thermoelectric and surface bulk micromachined infrared sensors.
In: Applied physics letters. 69 (1996), S. 3039-3041, 69
doi: 10.1063/1.116832
Artikel, Bibliographie

Horn, Joachim ; Pavlidis, Dimitris ; Park, Yongjo ; Hartnagel, Hans L. (1996)
Scanning tunneling microscopy characterization of MOCVD grown GaN.
In: Materials Science and Engineering: B, 44 (1/3)
doi: 10.1016/S0921-5107(96)01791-6
Artikel, Bibliographie