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Number of items: 47.

Evtukh, Anatoliy ; Hartnagel, Hans ; Yilmazoglu, Oktay ; Mimura, Hidenori ; Pavlidis, Dimitris (2015):
Quantum Electron Sources for High Frequency Applications.
Wiley Online Library, [Book]

Yilmazoglu, Oktay ; Evtukh, Anatoli ; Al-Daffaie, Shihab ; Biethan, Jens-Peter ; Pavlidis, Dimitris ; Litovchenko, Vladimir ; Hartnagel, Hans L. (2014):
Electron field emission from nanostructured semiconductors under photo illumination.
In: Turkish Journal of Physics, 38 (3), pp. 543-562. The Scientific and Technological Research Council of Turkey, [Article]

Schneider, Jörg J. ; Schlaak, Helmut F. ; Pavlidis, Dimitris ; Küppers, Franko ; Ensinger, Wolfgang (2012):
Elektromechanische Sensoren mit eindimensionalen Nanoobjekten.
In: Öffentliches Status-/Abschlussmeeting für die Projekte aus den Bekanntmachungen "Mikro-Nano-Integration als Schlüsseltechnologie für die nächste Generation von Sensoren und Aktoren" und "Magnetische Mikro- und Nanotechnologien", [Conference or Workshop Item]

Biethan, Jens-Peter ; Considine, Laurence ; Pavlidis, Dimitris (2008):
Epitaxial Growth of ZnO Whiskers on (100)-Silicon by Metalorganic Chemical Vapor Deposition.
In: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) <Leuven (Belgien),2008> ; Abstract book WOCSDICE 2008 ; 53-54, pp. 53-54, [Conference or Workshop Item]

Sigmund, Jochen ; Zogal, Karolina ; Lampin, J. F. ; Ivannikov, V. ; Sydlo, Cezary ; Feiginov, Michael N. ; Pavlidis, Dimitris ; Meissner, Peter ; Hartnagel, Hans L. (2007):
Low-temperature grown GaAsSb with sub-picosecond photocarrier lifetime for continuous-wave terahertz applications.
In: Proceedings of Topical Workshop on Heterostructure Microelectronic (TWHM), Kisarazu, Chiba, Japan, Aug. 2007, [Conference or Workshop Item]

Yilmazoglu, Oktay ; Hartnagel, Hans L. ; Pavlidis, Dimitris ; Evtukh, A. ; Litovchenko, V. ; Semenenko, M. ; Gorbanyuk, T. ; Grigoriev, A. (2007):
Pecularities of electron field emission from nanostructured GaN and AlGaN.
In: Proceedings of the 3rd Ukrainian Conference on Semiconductor Physics, Odessa, Ukraina, 17-22 June 2007.- S. 120, [Conference or Workshop Item]

Cho, Eunjung ; Pavlidis, Dimitris ; Zhao, Guangyuan ; Hubbard, Seth M. ; Schwank, Johannes (2006):
Improvement of CO sensitivity in GaN-based gas sensors.
In: IEICE Transactions C: IEICE Transactions on Electronics E, 89 (7), pp. 1047-1051. Institute of Electronics, Information and Communication Engineers (IEICE), ISSN 0916-8524, e-ISSN 1745-1353,
DOI: 10.1093/ietele/e89-c.7.1047,
[Article]

Yilmazoglu, Oktay ; Mutamba, Kabula ; Pavlidis, Dimitris ; Mbarga, Marie Rose (2006):
Strain sensitivity of AlGaN/GaN HEMT structures for sensing applications.
In: IEICE Transactions C: IEICE Transactions on Electronics E, 89 (7), pp. 1037-1041. Institute of Electronics, Information and Communication Engineers (IEICE), ISSN 0916-8516, e-ISSN 1745-1353,
DOI: 10.1093/ietele/e89-c.7.1037,
[Article]

Seo, S. ; Zhao, G. Y. ; Pavlidis, Dimitris ; Karaduman, T. ; Yilmazoglu, O. (2006):
Fabrication and DC Characterization of AlxGal-xN/GaN Superlattice Diodes for Millimeter Wave Generation.
In: Proceedings of WOCSDICE 06, Sweden, 15-17 May 2006, S. 51-53, [Conference or Workshop Item]

Zhu, Xi. ; Wang, J. ; Pavlidis, Dimitris (2006):
First InP/GaAsSb/InP DHBT Ka-band MMIC Oscillator.
In: Proceedings of European Microwave Integrated Circuits Conference, European Microwave Week, Manchester, U.K., 10-15 September, 2006, S. 153-156, [Conference or Workshop Item]

Cho, E. ; Pavlidis, Dimitris ; Seo, S. ; Jatta, Sandro ; Koegel, Benjamin ; Meissner, Peter (2006):
GaN/Air gap based micro opto electro mechanical fabry-perot filters.
In: International Workshop on Nitride Semiconductors (IWN 2006), Kyoto, Japan, pages Session TuP2Þ52, October 2006, [Conference or Workshop Item]

Zhu, X. ; Wang, J. ; Pavlidis, Dimitris ; Hsu, S. (2006):
InP/GaAsSb/InP DHBT Technology and its Application to MM-Wave Integrated Oscillators.
In: Proceedings of WOCSDICE 06, Sweden, 15-17 May 2006, S. 51-53, [Conference or Workshop Item]

Valizadeh, Pouya ; Pavlidis, Dimitris (2006):
Low-frequency noise-based degradation prediction of AlxGa1-xN/GaN MODFETs.
In: IEEE Transactions on Device and Materials Reliability, 6, pp. 479-485. [Article]

Wang., J. ; Zhu, X. ; Pavlidis, Dimitris (2006):
Low-power InP/GaAsSb/InP DHBT cascode transimpedance amplifier with GBP/P-dc of 7.2 GHz/mW.
In: Electronics Letters, 42, pp. 25-27. [Article]

Mutamba, Kabula ; Yilmazoglu, Oktay ; Sydlo, Cezary ; Mir, Mostafa ; Hubbard, Seth ; Zhao, G. ; Daumiller, Ingo ; Pavlidis, Dimitris (2006):
Technology aspects of GaN-based diodes for high-field operation.
In: Superlatices and Microstructures, 40, pp. 363-368. [Article]

Mutamba, K. ; Yilmazoglu, Oktay ; Cojocari, Oleg ; Sydlo, Cezary ; Pavlidis, Dimitris ; Hartnagel, Hans L. (2006):
Technology of Wide-Bandgap Diode Struvtures for High Frequency Operation.
In: International Semiconductor Conference, 2006 : 29th edition ; September 27 - 29, 2006, Sinaia, Romania ; CAS 2006 / organized by National Institute for Research and Development in Microtechnologies (IMT-Bucharest). - Piscataway, NJ : IEEE Operations Cente, Piscataway, NJ, IEEE Operations Center, [Conference or Workshop Item]

Zhao, G. ; Hubbard, S. M. ; Pavlidis, Dimitris (2004):
Yellow luminescence centers of GaN.
In: Japanese Journal of Applied Physics, 43, Part 1 (5A), pp. 2471-2472. IOP Publishing, ISSN 0021-4922,
DOI: 10.1143/JJAP.43.2471,
[Article]

Pavlidis, Dimitris (2004):
Composants nitrures pour applications THz.
In: Groupe de Recherche "Semi-Conducteurs à Large Bande Interdite" <2004, Fréjus>: Proceedings ... Session Composants et dispositifs électroniques, [Conference or Workshop Item]

Behtash, R. ; Tobler, H. ; Berlec, F.-J. ; Ziegler, V. ; Leier, H. ; Adelseck, B. ; Martin, T. ; Balmer, R. S. ; Pavlidis, Dimitris ; Jansen, R. H. ; Neuburger, M. ; Schumacher, H. (2004):
Coplanar AlGaN/GaN HEMT power amplifier MMIC at x-band.
In: 2004 IEEE MTT-S International Microwave Symposium digest : June 6 - 11, 2004, Fort Worth Convention Center, Fort Worth, Texas / digest ed.: David B. Denniston.- Vol. 3 -. Piscataway, NJ : IEEE Service Center, 2004.- V S., S. 1291-2070, LXXX S.- S. 1657-16,
IEEE Service Center, [Conference or Workshop Item]

Zhu, X. ; Pavlidis, Dimitris ; Zhao, G. ; Han, B.-K. ; Wibowo, A. ; Pan, N. (2004):
First power demonstration of InP/GaAsSb/InP double HBTs.
In: Conference proceedings / 2004 International Conference Indium Phosphide and Related Materials, 16th IPRM : May 31 (Mon.) - June 4 (Fri.), 2004, Kagoshima Shimin Bunka Hall, Kagoshima, Jaoan / sponsored by the Japan Society of Applied Physics, IEEE Lasers, Piscataway, NJ, IEEE Operations Center, [Conference or Workshop Item]

Pavlidis, Dimitris (2004):
GaN THz electronics.
In: Conference proceedings / 12th European Gallium Arsenide and other Compound Semiconductors Application Symposium : Monday 11th & Tuesday 12th October 2004 ; [at European Microwave Week, Amsterdam, 11 - 15 October 2004] / [endorsed by IEEE; Electron Devices, [Conference or Workshop Item]

Hubbard, S. M. ; Zhao, G. ; Pavlidis, Dimitris ; Cho, E. ; Sutton, W. (2004):
Optimization of GaN channel conductivity in AlGaN/GaN HFET structures grown by MOVPE.
In: Materials Research Society Fall Meeting, Boston, Mass., November 29-December 3, 2004, proceedings.- Paper E11.11, [Conference or Workshop Item]

Litovchenko, V. G. ; Evtukh, A. A. ; Kryuchenko, Yu. ; Goncharuk, N. M. ; Yilmazoglu, Oktay ; Mutamba, Kabula ; Hartnagel, Hans L. ; Pavlidis, Dimitris (2004):
Quantum size resonance tunneling in the field emission phenomenon.
In: Journal of applied physics, 96, pp. 867-877. [Article]

Pavlidis, Dimitris (2004):
Recent advances in III-V nitride electron devices.
In: Technical digest / IEDM, IEEE International Electron Devices Meeting 2004 : San Francisco, CA, December 13 - 15, 2004 ; 50th annual meeting / sponsored by Electron Devices Society of IEEE.- Piscataway, NJ : IEEE Operations Center, 2004.-1085 S.-ISBN: 0-78, IEEE Operations Center, [Article]

Litvinov, V. I. ; Manasson, A. ; Pavlidis, Dimitris (2004):
Short-period intrinsic stark GaN/AlGaN-superlattice as a Bloch oscillator.
In: Applied physics letters, 85, pp. 600-602. [Article]

Pavlidis, Dimitris (2004):
GaN negative differential resistance components with terahertz operation capability : from fundamentals to devices.
In: Optoelectronic devices : III-nitrides / [ed. by:] M. Razeghi; M. Henini.-1. ed.-, pp. Chapter 13, Amsterdam [u.a.], Elsevier, ISBN 0-08-044426-1,
[Book Section]

Yilmazoglu, Oktay ; Pavlidis, Dimitris ; Litvin, Yu. M. ; Hubbard, S. M. ; Tiginyanu, I. M. ; Mutamba, Kabula ; Hartnagel, Hans L. ; Litovchenko, V. G. ; Evtukh, A. A. (2003):
Field emission from quantum size GaN structures.
In: Applied Surface Science, 220 (1-4), pp. 46-50. Elsevier, ISSN 01694332,
DOI: 10.1016/S0169-4332(03)00750-5,
[Article]

Syrbu, N. N. ; Tiginyanu, I. M. ; Ursaki, V. V. ; Zalamai, V. V. ; Popa, V. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003):
Free excitons in strained MOCVD-grown GaN layers.
In: MRS Internet Journal of Nitride Semiconductor Research, 8 (1), Springer Nature, e-ISSN 1092-5783,
DOI: 10.1557/S1092578300000442,
[Article]

Zhu, X. ; Pavlidis, Dimitris ; Zhao, G. ; Bove, P. ; Lahrèche, H. ; Langer, R. (2003):
First microwave characteristics of InGaAlAs/GaAsSb/InP double HBTs.
In: IEICE Transactions C: IEICE Transactions on Electronics, 86 (10), pp. 2010-2014. IEICE, ISSN 1745-1353,
[Article]

Zhao, G. Y. ; Sutton, W. ; Pavlidis, Dimitris ; Piner, E. ; Schwank, J. W. ; Hubbard, S. M. (2003):
A novel Pt-AlGaN/GaN heterostructure Schottky diode gas sensor on Si.
In: IEICE Transactions C: IEICE Transactions on Electronics, 86 (10), pp. 2027-2031. IEICE, ISSN 1745-1353,
[Article]

Ursaki, V. V. ; Tiginyanu, I. M. ; Zalamai, V. V. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003):
Optical characterization of AlN/GaN heterostructure.
In: Journal of Applied Physics, 94 (8), pp. 4813-4818. American Institute of Physics, ISSN 00218979,
DOI: 10.1063/1.1609048,
[Article]

Hsu, S. S. H. ; Pavlidis, Dimitris (2003):
A comparison of low frequency noise characteristics and noise sources in NPN and PNP InP-based heterojunction bipolar transistors.
50, In: IEEE Transactions on Electron Devices, (9), pp. 1974-1982. IEEE, ISSN 1557-9646,
DOI: 10.1109/TED.2003.815367,
[Article]

Ursaki, V. V. ; Tiginyanu, I. M. ; Ricci, P. C. ; Anedda, A. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003):
Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation.
In: Journal of Applied Physics, 94 (6), pp. 3875-3882. American Institute of Physics, ISSN 0021-8979, e-ISSN 1089-7550,
DOI: 10.1063/1.1604950,
[Article]

Tiginyanu, I. M. ; Ursaki, V. V. ; Zalamai, V. V. ; Langa, S. ; Hubbard, S. M. ; Pavlidis, Dimitris ; Föll, H. (2003):
Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching.
In: Applied Physics Letters, 83 (8), pp. 1551-1553. AIP Publishing, ISSN 0003-6951,
DOI: 10.1063/1.1605231,
[Article]

Litovchenko, V. G. ; Evtukh, A. A. ; Litvin, Yu. M. ; Goncharuk, N. M. ; Hartnagel, Hans L. ; Yilmazoglu, Oktay ; Pavlidis, Dimitris (2003):
Peculiarities of the electron field emission from quantum-size structures.
In: Applied Surface Science, 215 (1-4), pp. 160-168. Elsevier, ISSN 0169-4332,
DOI: 10.1016/S0169-4332(03)00283-6,
[Article]

Pavlidis, Dimitris ; Hubbard, S. M. ; Hsu, S. S. H. ; Seo, S. (2003):
AlGaN/GaN and AlN/GaN heterostructure devices : a possible device technology for high RF power wireless transmission.
In: JUSPS, Japan-United States Joint Workshop on Space Solar Power System <2003, Kyoto>: Proceedings ..., [Conference or Workshop Item]

Mortazawi, A. ; Pavlidis, Dimitris (2003):
AlGaN/GaN heterostructure field effect transistor free-space combining oscillator arrays : an approach for solar power conversion to high RF power for wireless transmission.
In: JUSPS, Japan-United States Joint Workshop on Space Solar Power System <2003, Kyoto>: Proceedings ..., [Conference or Workshop Item]

Hsu, S. H. ; Pavlidis, Dimitris (2003):
Analysis and modeling of dispersion characteristics in AlGaN/GaN MODFETs.
In: GaAs IC Symposium <25, 2003, San Diego, Calif.>: Technical digest 2003 ...- Piscataway, NJ: IEEE Service Center, 2003.- 304 S.- ISBN 0-7803-7833-4.- S. 119-122, Piscataway, NJ, IEEE Service Center, [Conference or Workshop Item]

Siah, E. S. ; Volakis, J. L. ; Pavlidis, Dimitris ; Liepa, V. V. (2003):
Electromagnetic analysis of plane wave illumination effects onto passive and active circuit topologies.
2, In: IEEE Antennas and Wireless Propagation Letters, pp. 230-233. IEEE, ISSN 15361225,
DOI: 10.1109/LAWP.2003.819691,
[Article]

Valizadeh, P. ; Alekseev, E. ; Pavlidis, Dimitris ; Yun, F. ; Morkoc, H. (2003):
Enhancement-mode AlGal-xN/GaN modulation doped field effect transistors.
In: WOCSDICE, Workshop on Compound Semiconductor Devices and Integrated Circuits <27, 2003, Fürigen>: Proceedings ...- Zürich: ETH Zentrum, 2003.- 126 S., Zürich, ETH Zentrum, [Conference or Workshop Item]

Zhu, X. ; Pavlidis, Dimitris ; Zhao, G. (2003):
First high-frequency amd power demonstration of InGaAlAs/GaAsSb/InP double HBTs.
In: International Conference on Indium Phosphide and Related Materials <2003, Santa Barbara, Calif.>: Proceedings ...- Piscataway, NJ: IEEE Service Center, 2003.- 578 S.- ISBN 0-7803-7704-4.- S. 149-152, Piscataway, NJ, IEEE Service Center, [Conference or Workshop Item]

Sutton, W. ; Pavlidis, Dimitris ; Lahrèche, H. ; Damilano, B. ; Langer, R. (2003):
Large signal properties of AlGaN/GaN HEMTs on high resistivity substrates grown by MBE.
In: GAAS, European Gallium Arsenide and Other Compound Semiconductors Application Symposium <11, 2003, München>: Proceedings ...- London: Horizon House Publ., 2003.- 540 S.- ISBN 1-580-53837-1, London, Horizon House Publ., [Conference or Workshop Item]

Valizadeh, P. ; Pavlidis, Dimitris (2003):
Low frequency noise-based monitoring of the effects of RF and DC stress on AlGaN/GaN MODFETs.
In: GaAs IC Symposium <25, 2003, San Diego, Calif.>: Technical digest 2003 ...- Piscataway, NJ: IEEE Service Center, 2003.- 304 S.- ISBN 0-7803-7833-4.- S. 78-81, Piscataway, NJ, IEEE Service Center, [Conference or Workshop Item]

Siah, E. S. ; Volakis, J. L. ; Pavlidis, Dimitris ; Liepa, V. V. (2003):
Plane wave illumination effects onto circuit topologies.
In: IEEE Antennas and Propagation Society : 2003 digest ... international symposium, June 22-27, 2003, Columbus, Ohio ...- Piscataway, NJ: IEEE Operations Center, 2003.- ISBN 0-7803-7846-6, Piscataway, NJ, IEEE Operations Center, [Conference or Workshop Item]

Wood, C. E. C. ; Pavlidis, Dimitris (2003):
Recent advantages, remaining challenges in wide bandgap semiconductors.
In: WOCSDICE, Workshop on Compound Semiconductor Devices and Integrated Circuits <27, 2003, Fürigen>: Proceedings ...- Zürich: ETH Zentrum, 2003.- 126 S., Zürich, ETH Zentrum, [Conference or Workshop Item]

Ursaki, V. V. ; Tiginyanu, I. M. ; Syrbu, N. N. ; Zalamai, V. V. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003):
Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures.
18, In: Semiconductor science and technology, pp. L9-L11. [Article]

Yilmazoglu, Oktay ; Pavlidis, Dimitris ; Litvin, Yu. M. ; Hubbard, S. M. ; Tiginyanu, I. ; Mutamba, Kabula ; Hartnagel, Hans L. ; Litovchenko, V. G. ; Evtukh, A. A. (2002):
Field emission from quantum size GaN whiskers.
In: International Vacuum Microelectronics Conference <15, 2002, Lyon>: Proceedings ... IVMC 2002.- Lyon, 2002.- QB3.07, [Conference or Workshop Item]

This list was generated on Tue Jun 22 00:35:35 2021 CEST.