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Number of items: 47.

Evtukh, Anatoliy and Hartnagel, Hans and Yilmazoglu, Oktay and Mimura, Hidenori and Pavlidis, Dimitris:
Quantum Electron Sources for High Frequency Applications.
[Online-Edition: http://dx.doi.org/10.1002/9781119037989.ch9]
Wiley Online Library , pp. 375-446.
[Book] , (2015)

Yilmazoglu, Oktay and Evtukh, Anatoli and Al-Daffaie, Shihab and Biethan, Jens-Peter and Pavlidis, Dimitris and Litovchenko, Vladimir and Hartnagel, Hans L. :
Electron field emission from nanostructured semiconductors under photo illumination.
In: Turkish Journal of Physics, 38 (3) pp. 543-562.
[Article] , (2014)

Schneider, Jörg J. and Schlaak, Helmut F. and Pavlidis, Dimitris and Küppers, Franko and Ensinger, Wolfgang :
Elektromechanische Sensoren mit eindimensionalen Nanoobjekten.
[Online-Edition: http://www.vdivde-it.de/anmeldung/mni-mag-2012/vortraege]
In: Öffentliches Status-/Abschlussmeeting für die Projekte aus den Bekanntmachungen "Mikro-Nano-Integration als Schlüsseltechnologie für die nächste Generation von Sensoren und Aktoren" und "Magnetische Mikro- und Nanotechnologien" .
[Conference or Workshop Item] , (2012)

Biethan, Jens-Peter and Considine, Laurence and Pavlidis, Dimitris :
Epitaxial Growth of ZnO Whiskers on (100)-Silicon by Metalorganic Chemical Vapor Deposition.
In: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) <Leuven (Belgien),2008> ; Abstract book WOCSDICE 2008 ; 53-54 .
[Conference or Workshop Item] , (2008)

Sigmund, Jochen and Zogal, Karolina and Lampin, J. F. and Ivannikov, V. and Sydlo, Cezary and Feiginov, Michael N. and Pavlidis, Dimitris and Meissner, Peter and Hartnagel, Hans L. :
Low-temperature grown GaAsSb with sub-picosecond photocarrier lifetime for continuous-wave terahertz applications.
In: Proceedings of Topical Workshop on Heterostructure Microelectronic (TWHM), Kisarazu, Chiba, Japan, Aug. 2007 .
[Conference or Workshop Item] , (2007)

Yilmazoglu, Oktay and Hartnagel, Hans L. and Pavlidis, Dimitris and Evtukh, A. and Litovchenko, V. and Semenenko, M. and Gorbanyuk, T. and Grigoriev, A. :
Pecularities of electron field emission from nanostructured GaN and AlGaN.
In: Proceedings of the 3rd Ukrainian Conference on Semiconductor Physics, Odessa, Ukraina, 17-22 June 2007.- S. 120 .
[Conference or Workshop Item] , (2007)

Seo, S. and Zhao, G. Y. and Pavlidis, Dimitris and Karaduman, T. and Yilmazoglu, O. :
Fabrication and DC Characterization of AlxGal-xN/GaN Superlattice Diodes for Millimeter Wave Generation.
In: Proceedings of WOCSDICE 06, Sweden, 15-17 May 2006, S. 51-53 .
[Conference or Workshop Item] , (2006)

Zhu, Xi. and Wang, J. and Pavlidis, Dimitris :
First InP/GaAsSb/InP DHBT Ka-band MMIC Oscillator.
In: Proceedings of European Microwave Integrated Circuits Conference, European Microwave Week, Manchester, U.K., 10-15 September, 2006, S. 153-156 .
[Conference or Workshop Item] , (2006)

Cho, E. and Pavlidis, Dimitris and Seo, S. and Jatta, Sandro and Koegel, Benjamin and Meissner, Peter :
GaN/Air gap based micro opto electro mechanical fabry-perot filters.
In: International Workshop on Nitride Semiconductors (IWN 2006), Kyoto, Japan, pages Session TuP2Þ52, October 2006 .
[Conference or Workshop Item] , (2006)

Cho, Eunjung and Pavlidis, Dimitris and Zhao, Guangyuan and Hubbard, Seth M. and Schwank, Johannes :
Improvement of CO sensitivity in GaN-based gas sensors.
In: IEICE Transactions on Electronics E, 89-C pp. 1047-1051.
[Article] , (2006)

Zhu, X. and Wang, J. and Pavlidis, Dimitris and Hsu, S. :
InP/GaAsSb/InP DHBT Technology and its Application to MM-Wave Integrated Oscillators.
In: Proceedings of WOCSDICE 06, Sweden, 15-17 May 2006, S. 51-53 .
[Conference or Workshop Item] , (2006)

Valizadeh, Pouya and Pavlidis, Dimitris :
Low-frequency noise-based degradation prediction of AlxGa1-xN/GaN MODFETs.
In: IEEE Transactions on Device and Materials Reliability, 6 pp. 479-485.
[Article] , (2006)

Wang., J. and Zhu, X. and Pavlidis, Dimitris :
Low-power InP/GaAsSb/InP DHBT cascode transimpedance amplifier with GBP/P-dc of 7.2 GHz/mW.
In: Electronics Letters, 42 pp. 25-27.
[Article] , (2006)

Yilmazoglu, Oktay and Mutamba, Kabula and Pavlidis, Dimitris and Mbarga, Marie Rose :
Strain sensitivity of AlGaN/GaN HEMT structures for sensing applications.
In: EICE Transactions on Electronics E, 89-C pp. 1037-1041.
[Article] , (2006)

Mutamba, Kabula and Yilmazoglu, Oktay and Sydlo, Cezary and Mir, Mostafa and Hubbard, Seth and Zhao, G. and Daumiller, Ingo and Pavlidis, Dimitris :
Technology aspects of GaN-based diodes for high-field operation.
In: Superlatices and Microstructures, 40 pp. 363-368.
[Article] , (2006)

Mutamba, K. and Yilmazoglu, Oktay and Cojocari, Oleg and Sydlo, Cezary and Pavlidis, Dimitris and Hartnagel, Hans L. :
Technology of Wide-Bandgap Diode Struvtures for High Frequency Operation.
In: International Semiconductor Conference, 2006 : 29th edition ; September 27 - 29, 2006, Sinaia, Romania ; CAS 2006 / organized by National Institute for Research and Development in Microtechnologies (IMT-Bucharest). - Piscataway, NJ : IEEE Operations Cente . IEEE Operations Center , Piscataway, NJ
[Conference or Workshop Item] , (2006)

Pavlidis, Dimitris :
Composants nitrures pour applications THz.
In: Groupe de Recherche "Semi-Conducteurs à Large Bande Interdite" <2004, Fréjus>: Proceedings ... Session Composants et dispositifs électroniques .
[Conference or Workshop Item] , (2004)

Behtash, R. and Tobler, H. and Berlec, F.-J. and Ziegler, V. and Leier, H. and Adelseck, B. and Martin, T. and Balmer, R. S. and Pavlidis, Dimitris and Jansen, R. H. and Neuburger, M. and Schumacher, H. :
Coplanar AlGaN/GaN HEMT power amplifier MMIC at x-band.
2004 IEEE MTT-S International Microwave Symposium digest : June 6 - 11, 2004, Fort Worth Convention Center, Fort Worth, Texas / digest ed.: David B. Denniston.- Vol. 3 -. Piscataway, NJ : IEEE Service Center, 2004.- V S., S. 1291-2070, LXXX S.- S. 1657-16 IEEE Service Center
[Conference or Workshop Item] , (2004)

Zhu, X. and Pavlidis, Dimitris and Zhao, G. and Han, B.-K. and Wibowo, A. and Pan, N. :
First power demonstration of InP/GaAsSb/InP double HBTs.
In: Conference proceedings / 2004 International Conference Indium Phosphide and Related Materials, 16th IPRM : May 31 (Mon.) - June 4 (Fri.), 2004, Kagoshima Shimin Bunka Hall, Kagoshima, Jaoan / sponsored by the Japan Society of Applied Physics, IEEE Lasers . IEEE Operations Center , Piscataway, NJ
[Conference or Workshop Item] , (2004)

Pavlidis, Dimitris :
GaN THz electronics.
In: Conference proceedings / 12th European Gallium Arsenide and other Compound Semiconductors Application Symposium : Monday 11th & Tuesday 12th October 2004 ; [at European Microwave Week, Amsterdam, 11 - 15 October 2004] / [endorsed by IEEE; Electron Devices .
[Conference or Workshop Item] , (2004)

Hubbard, S. M. and Zhao, G. and Pavlidis, Dimitris and Cho, E. and Sutton, W. :
Optimization of GaN channel conductivity in AlGaN/GaN HFET structures grown by MOVPE.
In: Materials Research Society Fall Meeting, Boston, Mass., November 29-December 3, 2004, proceedings.- Paper E11.11 .
[Conference or Workshop Item] , (2004)

Litovchenko, V. G. and Evtukh, A. A. and Kryuchenko, Yu. and Goncharuk, N. M. and Yilmazoglu, Oktay and Mutamba, Kabula and Hartnagel, Hans L. and Pavlidis, Dimitris :
Quantum size resonance tunneling in the field emission phenomenon.
In: Journal of applied physics, 96 pp. 867-877.
[Article] , (2004)

Pavlidis, Dimitris :
Recent advances in III-V nitride electron devices.
In: Technical digest / IEDM, IEEE International Electron Devices Meeting 2004 : San Francisco, CA, December 13 - 15, 2004 ; 50th annual meeting / sponsored by Electron Devices Society of IEEE.- Piscataway, NJ : IEEE Operations Center, 2004.-1085 S.-ISBN: 0-78
[Article] , (2004)

Litvinov, V. I. and Manasson, A. and Pavlidis, Dimitris :
Short-period intrinsic stark GaN/AlGaN-superlattice as a Bloch oscillator.
In: Applied physics letters, 85 pp. 600-602.
[Article] , (2004)

Zhao, G. and Hubbard, S. M. and Pavlidis, Dimitris :
Yellow luminescence centers of GaN.
In: Japanese journal of applied physics, Vol. 4 pp. 2471-2472.
[Article] , (2004)

Pavlidis, Dimitris :
GaN negative differential resistance components with terahertz operation capability : from fundamentals to devices.
In: Optoelectronic devices : III-nitrides / [ed. by:] M. Razeghi; M. Henini.-1. ed.-. Elsevier, Amsterdam [u.a.] , Chapter 13. ISBN 0-08-044426-1
[Book Section] , (2004)

Pavlidis, Dimitris and Hubbard, S. M. and Hsu, S. S. H. and Seo, S. :
AlGaN/GaN and AlN/GaN heterostructure devices : a possible device technology for high RF power wireless transmission.
In: JUSPS, Japan-United States Joint Workshop on Space Solar Power System <2003, Kyoto>: Proceedings ... .
[Conference or Workshop Item] , (2003)

Mortazawi, A. and Pavlidis, Dimitris :
AlGaN/GaN heterostructure field effect transistor free-space combining oscillator arrays : an approach for solar power conversion to high RF power for wireless transmission.
In: JUSPS, Japan-United States Joint Workshop on Space Solar Power System <2003, Kyoto>: Proceedings ... .
[Conference or Workshop Item] , (2003)

Hsu, S. H. and Pavlidis, Dimitris :
Analysis and modeling of dispersion characteristics in AlGaN/GaN MODFETs.
In: GaAs IC Symposium <25, 2003, San Diego, Calif.>: Technical digest 2003 ...- Piscataway, NJ: IEEE Service Center, 2003.- 304 S.- ISBN 0-7803-7833-4.- S. 119-122 . IEEE Service Center , Piscataway, NJ
[Conference or Workshop Item] , (2003)

Siah, E. S. and Volakis, J. L. and Pavlidis, Dimitris and Liepa, V. V. :
Electromagnetic analysis of plane wave illumination effects onto passive and active circuit topologies.
In: IEEE antennas and wireless propagation letters, Vol. 2 pp. 230-233.
[Article] , (2003)

Valizadeh, P. and Alekseev, E. and Pavlidis, Dimitris and Yun, F. and Morkoc, H. :
Enhancement-mode AlGal-xN/GaN modulation doped field effect transistors.
In: WOCSDICE, Workshop on Compound Semiconductor Devices and Integrated Circuits <27, 2003, Fürigen>: Proceedings ...- Zürich: ETH Zentrum, 2003.- 126 S. . ETH Zentrum , Zürich
[Conference or Workshop Item] , (2003)

Yilmazoglu, Oktay and Pavlidis, Dimitris and Litvin, Yu. M. and Hubbard, S. M. and Tiginyanu, I. M. and Mutamba, Kabula and Hartnagel, Hans L. and Litovchenko, V. G. and Evtukh, A. A. :
Field emission from quantum size GaN structures.
In: Applied surface science, Vol. 2 pp. 46-50.
[Article] , (2003)

Zhu, X. and Pavlidis, Dimitris and Zhao, G. :
First high-frequency amd power demonstration of InGaAlAs/GaAsSb/InP double HBTs.
In: International Conference on Indium Phosphide and Related Materials <2003, Santa Barbara, Calif.>: Proceedings ...- Piscataway, NJ: IEEE Service Center, 2003.- 578 S.- ISBN 0-7803-7704-4.- S. 149-152 . IEEE Service Center , Piscataway, NJ
[Conference or Workshop Item] , (2003)

Zhu, X. and Pavlidis, Dimitris and Zhao, G. and Bove, P. and Lahrèche, H. and Langer, R. :
First microwave characteristics of InGaAlAs/GaAsSb/InP double HBTs.
In: IEICE transactions on electronics / E / C, Vol. 8 pp. 2010-2014.
[Article] , (2003)

Syrbu, N. N. and Tiginyanu, I. M. and Ursaki, V. V. and Zalamai, V. V. and Popa, V. and Hubbard, S. M. and Pavlidis, Dimitris :
Free excitons in strained MOCVD-grown GaN layers.
In: MRS internet journal of nitride semiconductor research, Vol. 8 pp. 1-5.
[Article] , (2003)

Sutton, W. and Pavlidis, Dimitris and Lahrèche, H. and Damilano, B. and Langer, R. :
Large signal properties of AlGaN/GaN HEMTs on high resistivity substrates grown by MBE.
In: GAAS, European Gallium Arsenide and Other Compound Semiconductors Application Symposium <11, 2003, München>: Proceedings ...- London: Horizon House Publ., 2003.- 540 S.- ISBN 1-580-53837-1 . Horizon House Publ. , London
[Conference or Workshop Item] , (2003)

Valizadeh, P. and Pavlidis, Dimitris :
Low frequency noise-based monitoring of the effects of RF and DC stress on AlGaN/GaN MODFETs.
In: GaAs IC Symposium <25, 2003, San Diego, Calif.>: Technical digest 2003 ...- Piscataway, NJ: IEEE Service Center, 2003.- 304 S.- ISBN 0-7803-7833-4.- S. 78-81 . IEEE Service Center , Piscataway, NJ
[Conference or Workshop Item] , (2003)

Tiginyanu, I. M. and Ursaki, V. V. and Zalamai, V. V. and Langa, S. and Hubbard, S. M. and Pavlidis, Dimitris and Föll, H. :
Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching.
In: Applied physics letters, Vol. 8 pp. 1551-1553.
[Article] , (2003)

Ursaki, V. V. and Tiginyanu, I. M. and Zalamai, V. V. and Hubbard, S. M. and Pavlidis, Dimitris :
Optical characterization of AlN/GaN heterostructure.
In: Journal of applied physics, Vol. 9 pp. 4813-481.
[Article] , (2003)

Litovchenko, V. G. and Evtukh, A. A. and Litvin, Yu. M. and Goncharuk, N. M. and Hartnagel, Hans L. and Yilmazoglu, Oktay and Pavlidis, Dimitris :
Pecularities of the electron field emission from quantum-size structures.
In: Applied surface science, Vol. 2 pp. 160-168.
[Article] , (2003)

Ursaki, V. V. and Tiginyanu, I. M. and Ricci, P. C. and Anedda, A. and Hubbard, S. M. and Pavlidis, Dimitris :
Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation.
In: Journal of applied physics, Vol. 9 pp. 3875-388.
[Article] , (2003)

Siah, E. S. and Volakis, J. L. and Pavlidis, Dimitris and Liepa, V. V. :
Plane wave illumination effects onto circuit topologies.
In: IEEE Antennas and Propagation Society : 2003 digest ... international symposium, June 22-27, 2003, Columbus, Ohio ...- Piscataway, NJ: IEEE Operations Center, 2003.- ISBN 0-7803-7846-6 . IEEE Operations Center , Piscataway, NJ
[Conference or Workshop Item] , (2003)

Wood, C. E. C. and Pavlidis, Dimitris :
Recent advantages, remaining challenges in wide bandgap semiconductors.
In: WOCSDICE, Workshop on Compound Semiconductor Devices and Integrated Circuits <27, 2003, Fürigen>: Proceedings ...- Zürich: ETH Zentrum, 2003.- 126 S. . ETH Zentrum , Zürich
[Conference or Workshop Item] , (2003)

Ursaki, V. V. and Tiginyanu, I. M. and Syrbu, N. N. and Zalamai, V. V. and Hubbard, S. M. and Pavlidis, Dimitris :
Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures.
In: Semiconductor science and technology, 18 L9-L11.
[Article] , (2003)

Hsu, S. S. H. and Pavlidis, Dimitris :
A comparison of low frequency noise characteristics and noise sources in NPN and PNP InP-based heterojunction bipolar transistors.
In: IEEE transactions on electron devices, Vol. 5 pp. 1974-1982.
[Article] , (2003)

Zhao, G. Y. and Sutton, W. and Pavlidis, Dimitris and Piner, E. and Schwank, J. W. and Hubbard, S. M. :
A novel Pt-AlGaN/GaN heterostructure Schottky diode gas sensor on Si.
In: IEICE transactions on electronics / E / C, Vol. 8 pp. 2027-2031.
[Article] , (2003)

Yilmazoglu, Oktay and Pavlidis, Dimitris and Litvin, Yu. M. and Hubbard, S. M. and Tiginyanu, I. and Mutamba, Kabula and Hartnagel, Hans L. and Litovchenko, V. G. and Evtukh, A. A. :
Field emission from quantum size GaN whiskers.
In: International Vacuum Microelectronics Conference <15, 2002, Lyon>: Proceedings ... IVMC 2002.- Lyon, 2002.- QB3.07 .
[Conference or Workshop Item] , (2002)

This list was generated on Tue May 21 00:22:46 2019 CEST.