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A novel Pt-AlGaN/GaN heterostructure Schottky diode gas sensor on Si

Zhao, G. Y. and Sutton, W. and Pavlidis, Dimitris and Piner, E. and Schwank, J. W. and Hubbard, S. M. (2003):
A novel Pt-AlGaN/GaN heterostructure Schottky diode gas sensor on Si.
In: IEICE Transactions C: IEICE Transactions on Electronics, (10), 86. IEICE, pp. 2027-2031, ISSN 1745-1353,
[Article]

Item Type: Article
Erschienen: 2003
Creators: Zhao, G. Y. and Sutton, W. and Pavlidis, Dimitris and Piner, E. and Schwank, J. W. and Hubbard, S. M.
Title: A novel Pt-AlGaN/GaN heterostructure Schottky diode gas sensor on Si
Language: English
Journal or Publication Title: IEICE Transactions C: IEICE Transactions on Electronics
Number: 10
Publisher: IEICE
Divisions: 18 Department of Electrical Engineering and Information Technology
Date Deposited: 20 Nov 2008 08:18
Additional Information:

Ebenfalls ersch. in: TWHM, Topical Workshop on Heterostructure Microelectronics <2003, Okinawa>: Proceedings...- S. 54-55

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