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Number of items: 4.

Ursaki, V. V. and Tiginyanu, I. M. and Zalamai, V. V. and Hubbard, S. M. and Pavlidis, Dimitris (2003):
Optical characterization of AlN/GaN heterostructure.
In: Journal of Applied Physics, 94 (8), pp. 4813-4818. American Institute of Physics, ISSN 00218979,
DOI: 10.1063/1.1609048,
[Article]

Tiginyanu, I. M. and Ursaki, V. V. and Zalamai, V. V. and Langa, S. and Hubbard, S. M. and Pavlidis, Dimitris and Föll, H. (2003):
Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching.
In: Applied Physics Letters, 83 (8), pp. 1551-1553. AIP Publishing, ISSN 0003-6951,
DOI: 10.1063/1.1605231,
[Article]

Syrbu, N. N. and Tiginyanu, I. M. and Ursaki, V. V. and Zalamai, V. V. and Popa, V. and Hubbard, S. M. and Pavlidis, Dimitris (2003):
Free excitons in strained MOCVD-grown GaN layers.
In: MRS internet journal of nitride semiconductor research, 8, pp. 1-5. [Article]

Ursaki, V. V. and Tiginyanu, I. M. and Syrbu, N. N. and Zalamai, V. V. and Hubbard, S. M. and Pavlidis, Dimitris (2003):
Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures.
18, In: Semiconductor science and technology, pp. L9-L11. [Article]

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