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Number of items: 3.

Cojocari, Oleg and Popa, V. and Ursaki, V. V. and Tiginyanu, I. M. and Hartnagel, Hans L. and Daumiller, I. (2004):
GaN Schottky multiplier diodes prepared by electroplating : a study of passivation technology.
In: Semiconductor science and technology, pp. 1273-1279, 19, [Article]

Cojocari, Oleg and Popa, V. and Ursaki, V. V. and Tiginyanu, I. M. and Mutamba, Kabula and Saglam, Mustafa and Hartnagel, Hans L. (2004):
Micrometer-size GaN Schottky-diodes for MM-wave frequency multipliers.
M. Thumm ..., ed.- Piscataway, NJ, IEEE Operations Center, In: Conference digest of the 2004 joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics : September 27 - October 1, 2004, University of Karlsruhe (TH), Karlsruhe, Germany / [sponsored b, [Conference or Workshop Item]

Syrbu, N. N. and Tiginyanu, I. M. and Ursaki, V. V. and Zalamai, V. V. and Popa, V. and Hubbard, S. M. and Pavlidis, Dimitris (2003):
Free excitons in strained MOCVD-grown GaN layers.
In: MRS internet journal of nitride semiconductor research, pp. 1-5, Vol. 8, [Article]

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