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Number of items: 4.

Horn, Joachim (1998):
Lumineszenzuntersuchungen an Verbindungshalbleitern nach Anregung mit einem Rastertunnelmikroskop.
Aachen: Shaker, 1998. VIII,129 S,
Aachen, Shaker, TU Darmstadt, [Ph.D. Thesis]

Horn, Joachim and Pavlidis, and Park, and Hartnagel, (1996):
Scanning tunneling microscopy characterization of MOCVD grown GaN.
In: EXMATEC: International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies <3, 1996, Breisgau>: Proceedings, [Conference or Workshop Item]

Horn, Joachim and Vogt, and Aller, and Hartnagel, (1996):
Semiconductor heterostructure interface characterization using scanning tunneling microscope excited time-resolved luminescence.
In: Journal of vacuum science and technology. B 14 (1996), S. 820-823, [Article]

Horn, Joachim and Marx, and Weiss, and Hartnagel, and Stehle, and Bischoff, and Pagnia, (1995):
High resolution surface characterization using STM light emission techniques.
In: Passivation of metals and semiconductors. Hrsg.: K.E. Heusler. S. 145-154, Aedermannsdorf: Trans Tech Publ., 1995,
Aedermannsdorf, Trans Tech Publ, [Book Section]

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