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Hafnium oxide thin films: Effect of growth parameters on oxygen and hafnium vacancies

Hildebrandt, E. and Kurian, J. and Zimmermann, J. and Fleissner, A. and von Seggern, H. and Alff, L. (2009):
Hafnium oxide thin films: Effect of growth parameters on oxygen and hafnium vacancies.
In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, pp. 325-328, 27, (1), ISSN 10711023, [Online-Edition: http://dx.doi.org/10.1116/1.3043474],
[Article]

Abstract

Thin films of hafnium oxide were grown by reactive molecular beam epitaxy. The growth parameters, substrate temperature, and oxidation conditions were varied in a wide range in order to investigate their influence on the thin film characteristics. The oxidation conditions during growth were decisive to hafnium oxide film orientation on c-cut sapphire substrates; it was possible to grow single oriented (00l) or (−111) oriented hafnium oxide films depending upon the oxidation conditions. The authors could successfully grow hafnium oxide thin films with oxygen or hafnium vacancies, depending on the oxidation conditions during growth, evident from optical band gap measurements. All the hafnium oxide thin films investigated in this study, irrespective of oxygen/hafnium vacancies, failed to show any ferromagnetic characteristics.

Item Type: Article
Erschienen: 2009
Creators: Hildebrandt, E. and Kurian, J. and Zimmermann, J. and Fleissner, A. and von Seggern, H. and Alff, L.
Title: Hafnium oxide thin films: Effect of growth parameters on oxygen and hafnium vacancies
Language: English
Abstract:

Thin films of hafnium oxide were grown by reactive molecular beam epitaxy. The growth parameters, substrate temperature, and oxidation conditions were varied in a wide range in order to investigate their influence on the thin film characteristics. The oxidation conditions during growth were decisive to hafnium oxide film orientation on c-cut sapphire substrates; it was possible to grow single oriented (00l) or (−111) oriented hafnium oxide films depending upon the oxidation conditions. The authors could successfully grow hafnium oxide thin films with oxygen or hafnium vacancies, depending on the oxidation conditions during growth, evident from optical band gap measurements. All the hafnium oxide thin films investigated in this study, irrespective of oxygen/hafnium vacancies, failed to show any ferromagnetic characteristics.

Journal or Publication Title: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Volume: 27
Number: 1
Uncontrolled Keywords: aluminium compounds, dielectric thin films, energy gap, hafnium compounds, magnetisation, molecular beam epitaxial growth, optical constants, oxidation, permittivity, vacancies (crystal), HfOx, HfO2, Hf, Al2O3, high-κ dielectric, hafnium oxide thin film, reactive molecular beam epitaxy
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
11 Department of Materials and Earth Sciences > Material Science > Electronic Materials
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 30 Mar 2012 08:02
Official URL: http://dx.doi.org/10.1116/1.3043474
Identification Number: doi:10.1116/1.3043474
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