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Epitaxial growth of Gd2-xCexCuO4 thin films

Krockenberger, Y. ; Kurian, J. ; Naitoh, M. ; Alff, L. (2008)
Epitaxial growth of Gd2-xCexCuO4 thin films.
In: Journal of Physics: Conference Series, 108
doi: 10.1088/1742-6596/108/1/012041
Artikel, Bibliographie

Kurzbeschreibung (Abstract)

We have grown (001)-oriented thin films of Gd2-xCexCuO4with cerium composition 0 < x < 0.2 by state-of-the-art reactive molecular beam epitaxy and characterized them by x-ray diffraction and transport measurements. A systematical change in the c-axis length upon cerium doping indicates that single-phase films were obtained for the whole doping range. Based on a log po2 - 1/T phase diagram in combination with reflection high energy electron diffraction (RHEED), phase stability has been determined in order to achieve optimized reduction conditions. Gd2-xCexCuO4 thin films even after controlled reductions treatment did not show superconductivity in the whole range of Ce concentration studied. However, the room temperature resistivity of optimally reduced Gd2-xCexCuO4 thin films shows a minimum at around xCe = 0.16. Our results on the growth and characterization of Gd2-xCexCuO4 thin films on (100) SrTiO3 substrates are described in detail.

Typ des Eintrags: Artikel
Erschienen: 2008
Autor(en): Krockenberger, Y. ; Kurian, J. ; Naitoh, M. ; Alff, L.
Art des Eintrags: Bibliographie
Titel: Epitaxial growth of Gd2-xCexCuO4 thin films
Sprache: Englisch
Publikationsjahr: 2008
Titel der Zeitschrift, Zeitung oder Schriftenreihe: Journal of Physics: Conference Series
Jahrgang/Volume einer Zeitschrift: 108
DOI: 10.1088/1742-6596/108/1/012041
Kurzbeschreibung (Abstract):

We have grown (001)-oriented thin films of Gd2-xCexCuO4with cerium composition 0 < x < 0.2 by state-of-the-art reactive molecular beam epitaxy and characterized them by x-ray diffraction and transport measurements. A systematical change in the c-axis length upon cerium doping indicates that single-phase films were obtained for the whole doping range. Based on a log po2 - 1/T phase diagram in combination with reflection high energy electron diffraction (RHEED), phase stability has been determined in order to achieve optimized reduction conditions. Gd2-xCexCuO4 thin films even after controlled reductions treatment did not show superconductivity in the whole range of Ce concentration studied. However, the room temperature resistivity of optimally reduced Gd2-xCexCuO4 thin films shows a minimum at around xCe = 0.16. Our results on the growth and characterization of Gd2-xCexCuO4 thin films on (100) SrTiO3 substrates are described in detail.

Fachbereich(e)/-gebiet(e): 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten
11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft
11 Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 29 Mär 2012 11:19
Letzte Änderung: 25 Apr 2016 07:52
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