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Number of items: 14.

Petzold, Stefan and Piros, Eszter and Eilhardt, Robert and Zintler, Alexander and Vogel, Tobias and Kaiser, Nico and Radetinac, Aldin and Komissinskiy, Philipp and Jalaguier, Eric and Nolot, Emmanuel and Charpin-Nicolle, Christelle and Wengerter, Christian and Molina-Luna, Leopoldo and Miranda, Enrique and Alff, Lambert (2020):
Neuromorphic Computing: Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching.
In: Advanced Electronic Materials, 6 (11), p. 2070044. Wiley, ISSN 2199160X,
DOI: 10.1002/aelm.202070044,
[Article]

Piros, Eszter and Lonsky, Martin and Petzold, Stefan and Zintler, Alexander and Sharath, S.U. and Vogel, Tobias and Kaiser, Nico and Eilhardt, Robert and Molina-Luna, Leopoldo and Wenger, Christian and Müller, Jens and Alff, Lambert (2020):
Role of Oxygen Defects in Conductive-Filament Formation in Y2O3 -Based Analog RRAM Devices as Revealed by Fluctuation Spectroscopy.
In: Physical Review Applied, 14 (3), pp. 034029. American Physical Society, ISSN 2331-7019,
DOI: 10.1103/PhysRevApplied.14.034029,
[Article]

Petzold, Stefan and Piros, Eszter and Eilhardt, Robert and Zintler, Alexander and Vogel, Tobias and Kaiser, Nico and Radetinac, Aldin and Komissinskiy, Philipp and Jalaguir, Eric and Nolot, Emmanuel and Charpin-Nicolle, Christelle and Wenger, Christian and Molina-Luna, Leopoldo and Miranda, Enrique and Alff, Lambert (2020):
Tailoring the Switching Dynamics in Yttrium Oxide-Based RRAM Devices by Oxygen Engineering: From Digital to Multi-Level Quantization toward Analog Switching.
In: Advanced Electronic Materials, 2020, Wiley, ISSN 2199160X,
DOI: 10.1002/aelm.202000439,
[Article]

Petzold, Stefan and Piros, Eszter and Eilhardt, Robert and Zintler, Alexander and Vogel, Tobias and Kaiser, Nico and Radetinac, Aldin and Komissinskiy, Philipp and Jalaguier, Eric and Nolot, Emmanuel and Charpin‐Nicolle, Christelle and Wenger, Christian and Molina‐Luna, Leopoldo and Miranda, Enrique and Alff, Lambert (2020):
Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching.
In: Advanced Electronic Materials, 6 (11), p. 2000439. Wiley, ISSN 2199-160X,
DOI: 10.1002/aelm.202000439,
[Article]

Zintler, Alexander and Eilhardt, Robert and Wang, Shuai and Krajnak, Matus and Schramowski, Patrick and Stammer, Wolfgang and Petzold, Stefan and Kaiser, Nico and Kerstling, Kristian and Alff, Lambert and Molina-Luna, Leopoldo (2020):
Machine Learning Assisted Pattern Matching: Insight into Oxide Electronic Device Performance by Phase Determination in 4D-STEM Datasets.
In: Microscopy and Microanalysis, 2020, pp. 1-3. Cambridge University Press, ISSN 1431-9276, e-ISSN 1435-8115,
DOI: 10.1017/S1431927620019790,
[Article]

Krajnak, Matus and Blazit, Jean-Denis and Zintler, Alexander and Eilhardt, Robert and Weiss, Jon and Cosart, Doug and Molina-Luna, Leopoldo and Tencé, Marcel and Gloter, Alexandre and Allen, Chrsitopher and McGrouther, Damien (2020):
Transforming Transmission Electron Microscopy with MerlinEM Electron Counting Detector.
In: Microscopy and Microanalysis, 2020, pp. 1-3. Cambridge University Press, ISSN 1431-9276, e-ISSN 1435-8115,
DOI: 10.1017/S1431927620019893,
[Article]

Piros, Eszter and Petzold, Stefan and Zintler, Alexander and Kaiser, Nico and Vogel, Tobias and Eilhardt, Robert and Wenger, Christian and Molina-Luna, Leopoldo and Alff, Lambert (2020):
Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier.
In: Applied Physics Letters, 117 (1), pp. 013504. American Institute of Physics, ISSN 0003-6951,
DOI: 10.1063/5.0009645,
[Article]

Cherkashinin, Gennady and Yu, Zhihang and Eilhardt, Robert and Alff, Lambert and Jaegermann, Wolfram (2020):
The Effect of Interfacial Charge Distribution on Chemical Compatibility and Stability of the High Voltage Electrodes (LiCoPO 4 , LiNiPO 4 )/Solid Electrolyte (LiPON) Interface.
In: Advanced Materials Interfaces, 7 (12), p. 2000276. Wiley, ISSN 2196-7350,
DOI: 10.1002/admi.202000276,
[Article]

Piros, Eszter and Lonsky, Martin and Petzold, Martin and Zintler, Alexander and Sharath, S.U. and Vogel, Tobias and Kaiser, Nico and Eilhardt, Robert and Molina-Luna, Leopoldo and Wenger, Christian and Müller, Jens and Alff, Lambert (2020):
Role of oxygen defects in forming conductive filaments in Y2O3-based analog RRAM devices as revealed by fluctuation spectroscopy.
In: Physical Review Applied, APS Publishing, ISSN 2331-7019,
[Article]

Petzold, S. and Zintler, Alexander and Eilhardt, Robert and Piros, E. and Kaiser, N. and Sharath, S. U. and Vogel, T. and Major, M. and McKenna, K. P. and Molina-Luna, Leopoldo and Alff, Lambert (2019):
Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices.
In: Advanced Electronic Materials, 25 (S2), pp. 1842-1843. WILEY, ISSN 2199160X,
DOI: 0.1017/S1431927619009942,
[Article]

Petzold, S. and Miranda, E. and Sharath, S.U. and Munos-Gorriz, J. and Vogel, T. and Piros, E. and Kaiser, N. and Eilhardt, Robert and Zintler, Alexander and Molina-Luna, Leopoldo and Sune, J. and Alff, Lambert (2019):
Analysis and simulation of the multiple resistive switching modes occurring in HfOx-based resistive random access memories using memdiodes.
In: Journal of Applied Physics, (125), p. 234503. ISSN 00218979,
DOI: 10.1063/1.5094864,
[Article]

Zintler, Alexander and Eilhardt, Robert and Petzold, S. and Kaiser, N. and Ulhas, S. and Alff, Lambert and Molina-Luna, Leopoldo (2019):
Correlation of Structural Modifications by Multiscale Phase Mapping in Filamentary Type HfO2-based RRAM: Towards a Component Specific in situ TEM Investigation.
In: Proceedings of Microscopy & Microanalysis, 25 (S2), pp. 1842-1843. Microscopy Society of America, DOI: 10.1017/S1431927619009942,
[Article]

Zintler, Alexander and Eilhardt, Robert and Petzold, Stefan and Kaiser, Nico and Ulhas, Sharath and Alff, Lambert and Molina-Luna, Leopoldo (2019):
Correlation of Structural Modifications by Multiscale Phase Mapping in Filamentary Type HfO2-based RRAM: Towards a Component Specific in situ TEM Investigation.
In: Microscopy and Microanalysis, 25 (S2), pp. 1842-1843. Cambridge University Press, ISSN 1431-9276,
DOI: 10.1017/S1431927619009942,
[Article]

Cherkashinin, Gennady and Eilhardt, Robert and Lebedev, Mikhail V. and Nappini, Silvia and Magnano, Elena and Jaegermann, Wolfram (2018):
Olivine-LiNiPO 4 Thin Films: Chemical Compatibility with Liquid Electrolyte and Interface Stability at High Potential.
In: Journal of The Electrochemical Society, 165 (4), pp. H3143-H3147. ISSN 0013-4651,
DOI: 10.1149/2.0211804jes,
[Article]

This list was generated on Tue Jan 26 01:05:24 2021 CET.