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Number of items: 4.

Petzold, S. and Zintler, Alexander and Eilhardt, Robert and Piros, E. and Kaiser, N. and Sharath, S. U. and Vogel, T. and Major, M. and McKenna, K. P. and Molina-Luna, Leopoldo and Alff, Lambert (2019):
Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices.
In: Advanced Electronic Materials, WILEY, pp. 1842-1843, 25, (S2), ISSN 2199160X,
DOI: 0.1017/S1431927619009942,

Petzold, S. and Miranda, E. and Sharath, S.U. and Munos-Gorriz, J. and Vogel, T. and Piros, E. and Kaiser, N. and Eilhardt, Robert and Zintler, Alexander and Molina-Luna, Leopoldo and Sune, J. and Alff, Lambert (2019):
Analysis and simulation of the multiple resistive switching modes occurring in HfOx-based resistive random access memories using memdiodes.
In: Journal of Applied Physics, p. 234503, (125), ISSN 00218979,
DOI: 10.1063/1.5094864,

Zintler, Alexander and Eilhardt, Robert and Petzold, S. and Kaiser, N. and Ulhas, S. and Alff, Lambert and Molina-Luna, Leopoldo (2019):
Correlation of Structural Modifications by Multiscale Phase Mapping in Filamentary Type HfO2-based RRAM: Towards a Component Specific in situ TEM Investigation.
In: Proceedings of Microscopy & Microanalysis, Microscopy Society of America, pp. 1842-1843, 25, (S2), DOI: 10.1017/S1431927619009942,

Cherkashinin, Gennady and Eilhardt, Robert and Lebedev, Mikhail V. and Nappini, Silvia and Magnano, Elena and Jaegermann, Wolfram (2018):
Olivine-LiNiPO 4 Thin Films: Chemical Compatibility with Liquid Electrolyte and Interface Stability at High Potential.
In: Journal of The Electrochemical Society, pp. H3143-H3147, 165, (4), ISSN 0013-4651,
DOI: 10.1149/2.0211804jes,
[Online-Edition: https://doi.org/10.1149/2.0211804jes],

This list was generated on Tue Oct 15 01:02:58 2019 CEST.