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Operando two-terminal devices inside a transmission electron microscope.
In: Communications Engineering, 2
doi: 10.1038/s44172-023-00133-9
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Kim, Taewook ; Vogel, Tobias ; Piros, Eszter ; Nasiou, Déspina ; Kaiser, Nico ; Schreyer, Philipp ; Winkler, Robert ; Zintler, Alexander ; Arzumanov, Alexey ; Petzold, Stefan ; Molina-Luna, Leopoldo ; Alff, Lambert (2023)
Oxide thickness-dependent resistive switching characteristics of Cu/HfO2/Pt ECM devices.
In: Applied Physics Letters, 2023 (122)
doi: 10.1063/5.0124781
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Mohammadi, Mahdad ; Xie, Ruiwen ; Hadaeghi, Niloofar ; Radetinac, Aldin ; Arzumanov, Alexey ; Komissinskiy, Philipp ; Zhang, Hongbin ; Alff, Lambert (2023)
Tailoring Optical Properties in Transparent Highly Conducting Perovskites by Cationic Substitution.
In: Advanced Materials, 35 (7)
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Vogel, Tobias ; Zintler, Alexander ; Kaiser, Nico ; Guillaume, Nicolas ; Lefèvre, Gauthier ; Lederer, Maximilian ; Serra, Anna Lisa ; Piros, Eszter ; Kim, Taewook ; Schreyer, Philipp ; Winkler, Robert ; Nasiou, Déspina ; Revello Olivo, Ricardo ; Ali, Tarek ; Lehninger, David ; Arzumanov, Alexey ; Charpin-Nicolle, Christelle ; Bourgeois, Guillaume ; Grenouillet, Laurent ; Cyrille, Marie-Claire ; Navarro, Gabriele ; Seidel, Konrad ; Kämpfe, Thomas ; Petzold, Stefan ; Trautmann, Christina ; Molina-Luna, Leopoldo ; Alff, Lambert (2022)
Structural and Electrical Response of Emerging Memories Exposed to Heavy Ion Radiation.
In: ACS Nano, 16 (9)
doi: 10.1021/acsnano.2c04841
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Kaiser, Nico ; Vogel, Tobias ; Zintler, Alexander ; Petzold, Stefan ; Arzumanov, Alexey ; Piros, Eszter ; Eilhardt, Robert ; Molina-Luna, Leopoldo ; Alff, Lambert (2021)
Defect-Stabilized Substoichiometric Polymorphs of Hafnium Oxide with Semiconducting Properties.
In: ACS Applied Materials & Interfaces, 2021
doi: 10.1021/acsami.1c09451
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Walk, Dominik ; Agrawal, Prannoy ; Zeinar, Lukas ; Salg, Patrick ; Arzumanov, Alexey ; Komissinskiy, Philipp ; Alff, Lambert ; Jakoby, Rolf ; Rupitsch, Stefan J. ; Maune, Holger (2021)
All-Oxide Varactor Electromechanical Properties Extracted by Highly Accurate Modeling Over a Broad Frequency and Electric Bias Range.
In: IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 68 (8)
doi: 10.1109/TUFFC.2021.3070749
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