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Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

Petzold, S. ; Zintler, Alexander ; Eilhardt, Robert ; Piros, E. ; Kaiser, N. ; Sharath, S. U. ; Vogel, T. ; Major, M. ; McKenna, K. P. ; Molina-Luna, Leopoldo ; Alff, Lambert (2019):
Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices.
In: Advanced Electronic Materials, 25 (S2), pp. 1842-1843. WILEY, ISSN 2199160X,
DOI: 0.1017/S1431927619009942,
[Article]

Item Type: Article
Erschienen: 2019
Creators: Petzold, S. ; Zintler, Alexander ; Eilhardt, Robert ; Piros, E. ; Kaiser, N. ; Sharath, S. U. ; Vogel, T. ; Major, M. ; McKenna, K. P. ; Molina-Luna, Leopoldo ; Alff, Lambert
Title: Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices
Language: English
Journal or Publication Title: Advanced Electronic Materials
Journal volume: 25
Number: S2
Publisher: WILEY
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Advanced Electron Microscopy (aem)
11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
Date Deposited: 14 Aug 2019 12:54
DOI: 0.1017/S1431927619009942
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