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Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

Petzold, S. and Zintler, Alexander and Eilhardt, Robert and Piros, E. and Kaiser, N. and Sharath, S. U. and Vogel, T. and Major, M. and McKenna, K. P. and Molina-Luna, Leopoldo and Alff, Lambert (2019):
Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices.
In: Advanced Electronic Materials, WILEY, pp. 1842-1843, 25, (S2), ISSN 2199160X,
DOI: 0.1017/S1431927619009942,
[Article]

Item Type: Article
Erschienen: 2019
Creators: Petzold, S. and Zintler, Alexander and Eilhardt, Robert and Piros, E. and Kaiser, N. and Sharath, S. U. and Vogel, T. and Major, M. and McKenna, K. P. and Molina-Luna, Leopoldo and Alff, Lambert
Title: Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices
Language: English
Journal or Publication Title: Advanced Electronic Materials
Volume: 25
Number: S2
Publisher: WILEY
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Advanced Electron Microscopy (aem)
11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
Date Deposited: 14 Aug 2019 12:54
DOI: 0.1017/S1431927619009942
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