Piros, Eszter ; Lonsky, Martin ; Petzold, Stefan ; Zintler, Alexander ; Sharath, S.U. ; Vogel, Tobias ; Kaiser, Nico ; Eilhardt, Robert ; Molina-Luna, Leopoldo ; Wenger, Christian ; Müller, Jens ; Alff, Lambert (2020)
Role of Oxygen Defects in Conductive-Filament Formation in Y2O3 -Based Analog RRAM Devices as Revealed by Fluctuation Spectroscopy.
In: Physical Review Applied, 14 (3)
doi: 10.1103/PhysRevApplied.14.034029
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Low-frequency noise in Y2O3-based resistive random-access memory devices with analog switching is studied at intermediate resistive states and as a function of dc cycling. A universal 1/f(alpha)-type behavior is found, with a frequency exponent of alpha approximate to 1.2 that is independent of the applied reset voltage or the device resistance and is attributed to the intrinsic abundance of oxygen vacancies unique to the structure of yttria. Remarkably, the noise magnitude in the high resistive state systematically decreases through dc training. This effect is attributed to the stabilization of the conductive filament via the consumption of oxygen vacancies, thus reducing the number of active fluctuators in the vicinity of the filament.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2020 |
| Autor(en): | Piros, Eszter ; Lonsky, Martin ; Petzold, Stefan ; Zintler, Alexander ; Sharath, S.U. ; Vogel, Tobias ; Kaiser, Nico ; Eilhardt, Robert ; Molina-Luna, Leopoldo ; Wenger, Christian ; Müller, Jens ; Alff, Lambert |
| Art des Eintrags: | Bibliographie |
| Titel: | Role of Oxygen Defects in Conductive-Filament Formation in Y2O3 -Based Analog RRAM Devices as Revealed by Fluctuation Spectroscopy |
| Sprache: | Englisch |
| Publikationsjahr: | 11 September 2020 |
| Verlag: | American Physical Society |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Physical Review Applied |
| Jahrgang/Volume einer Zeitschrift: | 14 |
| (Heft-)Nummer: | 3 |
| DOI: | 10.1103/PhysRevApplied.14.034029 |
| URL / URN: | https://journals.aps.org/prapplied/abstract/10.1103/PhysRevA... |
| Kurzbeschreibung (Abstract): | Low-frequency noise in Y2O3-based resistive random-access memory devices with analog switching is studied at intermediate resistive states and as a function of dc cycling. A universal 1/f(alpha)-type behavior is found, with a frequency exponent of alpha approximate to 1.2 that is independent of the applied reset voltage or the device resistance and is attributed to the intrinsic abundance of oxygen vacancies unique to the structure of yttria. Remarkably, the noise magnitude in the high resistive state systematically decreases through dc training. This effect is attributed to the stabilization of the conductive filament via the consumption of oxygen vacancies, thus reducing the number of active fluctuators in the vicinity of the filament. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Elektronenmikroskopie 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten |
| Hinterlegungsdatum: | 20 Nov 2020 11:46 |
| Letzte Änderung: | 20 Nov 2020 11:46 |
| PPN: | |
| Projekte: | Electronic Components and Systems for European Leadership Joint Undertaking, European Union (EU), Grant number H2020/2014-2020, Grant Agreement No. 3783176, Deutscher Akademischer Austausch Dienst (DAAD), German Research Foundation (DFG), Grant number AL 560/13-2, Federal Ministry of Education & Research (BMBF), Grant number 16ES0250; 16ESE0298, ENIAC JU within the PANACHE project, German Research Foundation (DFG), Grant number MO 3010/3-1, European Research Council (ERC), Grant number 805359-FOXON |
| Export: | |
| Suche nach Titel in: | TUfind oder in Google |
 |
Frage zum Eintrag |
Optionen (nur für Redakteure)
 |
Redaktionelle Details anzeigen |
Drucken
Impressum