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Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier

Piros, Eszter and Petzold, Stefan and Zintler, Alexander and Kaiser, Nico and Vogel, Tobias and Eilhardt, Robert and Wenger, Christian and Molina-Luna, Leopoldo and Alff, Lambert (2020):
Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier.
In: Applied Physics Letters, 117 (1), pp. 013504. American Institute of Physics, ISSN 0003-6951,
DOI: 10.1063/5.0009645,
[Article]

Abstract

This work addresses the thermal stability of bipolar resistive switching in yttrium oxide-based resistive random access memory revealed through the temperature dependence of the DC switching behavior. The operation voltages, current levels, and charge transport mechanisms are investigated at 25 °C, 85 °C, and 125 °C, and show overall good temperature immunity. The set and reset voltages, as well as the device resistance in both the high and low resistive states, are found to scale inversely with increasing temperatures. The Schottky-barrier height was observed to increase from approximately 1.02 eV at 25 °C to approximately 1.35 eV at 125 °C, an uncommon behavior explained by interface phenomena.

Item Type: Article
Erschienen: 2020
Creators: Piros, Eszter and Petzold, Stefan and Zintler, Alexander and Kaiser, Nico and Vogel, Tobias and Eilhardt, Robert and Wenger, Christian and Molina-Luna, Leopoldo and Alff, Lambert
Title: Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier
Language: English
Abstract:

This work addresses the thermal stability of bipolar resistive switching in yttrium oxide-based resistive random access memory revealed through the temperature dependence of the DC switching behavior. The operation voltages, current levels, and charge transport mechanisms are investigated at 25 °C, 85 °C, and 125 °C, and show overall good temperature immunity. The set and reset voltages, as well as the device resistance in both the high and low resistive states, are found to scale inversely with increasing temperatures. The Schottky-barrier height was observed to increase from approximately 1.02 eV at 25 °C to approximately 1.35 eV at 125 °C, an uncommon behavior explained by interface phenomena.

Journal or Publication Title: Applied Physics Letters
Journal volume: 117
Number: 1
Publisher: American Institute of Physics
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Advanced Electron Microscopy (aem)
11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
Date Deposited: 17 Jul 2020 05:54
DOI: 10.1063/5.0009645
Projects: This work was supported by the Deutscher Akademischer Austauschdienst (DAAD) and the Deutsche Forschungsgemeinschaft under Project No. AL 560/21-1., The authors gratefully acknowledge financial support by the Federal Ministry of Education and Research (BMBF) under Contract Nos. 16ES0250 and 16ESE0298 and by ENIAC JU within the project PANACHE., WAKeMeUP project which received funding from the Electronic Components and Systems for European Leadership Joint Undertaking in collaboration with the European Union's H2020 Framew. Progr. (H2020/2014-2020) and Nat. Auth., under No. 783176., Also, funding from DFG Grant No. MO 3010/3-1 and the European Research Council (ERC) "Horizon 2020" Program under Grant No. 805359-FOXON is gratefully acknowledged.
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