Piros, Eszter ; Petzold, Stefan ; Zintler, Alexander ; Kaiser, Nico ; Vogel, Tobias ; Eilhardt, Robert ; Wenger, Christian ; Molina-Luna, Leopoldo ; Alff, Lambert (2020)
Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier.
In: Applied Physics Letters, 117 (1)
doi: 10.1063/5.0009645
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
This work addresses the thermal stability of bipolar resistive switching in yttrium oxide-based resistive random access memory revealed through the temperature dependence of the DC switching behavior. The operation voltages, current levels, and charge transport mechanisms are investigated at 25 °C, 85 °C, and 125 °C, and show overall good temperature immunity. The set and reset voltages, as well as the device resistance in both the high and low resistive states, are found to scale inversely with increasing temperatures. The Schottky-barrier height was observed to increase from approximately 1.02 eV at 25 °C to approximately 1.35 eV at 125 °C, an uncommon behavior explained by interface phenomena.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2020 |
| Autor(en): | Piros, Eszter ; Petzold, Stefan ; Zintler, Alexander ; Kaiser, Nico ; Vogel, Tobias ; Eilhardt, Robert ; Wenger, Christian ; Molina-Luna, Leopoldo ; Alff, Lambert |
| Art des Eintrags: | Bibliographie |
| Titel: | Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier |
| Sprache: | Englisch |
| Publikationsjahr: | 10 Juli 2020 |
| Verlag: | American Institute of Physics |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Applied Physics Letters |
| Jahrgang/Volume einer Zeitschrift: | 117 |
| (Heft-)Nummer: | 1 |
| DOI: | 10.1063/5.0009645 |
| Kurzbeschreibung (Abstract): | This work addresses the thermal stability of bipolar resistive switching in yttrium oxide-based resistive random access memory revealed through the temperature dependence of the DC switching behavior. The operation voltages, current levels, and charge transport mechanisms are investigated at 25 °C, 85 °C, and 125 °C, and show overall good temperature immunity. The set and reset voltages, as well as the device resistance in both the high and low resistive states, are found to scale inversely with increasing temperatures. The Schottky-barrier height was observed to increase from approximately 1.02 eV at 25 °C to approximately 1.35 eV at 125 °C, an uncommon behavior explained by interface phenomena. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Elektronenmikroskopie 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten |
| Hinterlegungsdatum: | 17 Jul 2020 05:54 |
| Letzte Änderung: | 20 Nov 2020 09:03 |
| PPN: | |
| Projekte: | This work was supported by the Deutscher Akademischer Austauschdienst (DAAD) and the Deutsche Forschungsgemeinschaft under Project No. AL 560/21-1., The authors gratefully acknowledge financial support by the Federal Ministry of Education and Research (BMBF) under Contract Nos. 16ES0250 and 16ESE0298 and by ENIAC JU within the project PANACHE., WAKeMeUP project which received funding from the Electronic Components and Systems for European Leadership Joint Undertaking in collaboration with the European Union's H2020 Framew. Progr. (H2020/2014-2020) and Nat. Auth., under No. 783176., Also, funding from DFG Grant No. MO 3010/3-1 and the European Research Council (ERC) "Horizon 2020" Program under Grant No. 805359-FOXON is gratefully acknowledged. |
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