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Tailoring the Switching Dynamics in Yttrium Oxide-Based RRAM Devices by Oxygen Engineering: From Digital to Multi-Level Quantization toward Analog Switching

Petzold, Stefan and Piros, Eszter and Eilhardt, Robert and Zintler, Alexander and Vogel, Tobias and Kaiser, Nico and Radetinac, Aldin and Komissinskiy, Philipp and Jalaguir, Eric and Nolot, Emmanuel and Charpin-Nicolle, Christelle and Wenger, Christian and Molina-Luna, Leopoldo and Miranda, Enrique and Alff, Lambert (2020):
Tailoring the Switching Dynamics in Yttrium Oxide-Based RRAM Devices by Oxygen Engineering: From Digital to Multi-Level Quantization toward Analog Switching.
In: Advanced Electronic Materials, 2020, Wiley, ISSN 2199160X,
DOI: 10.1002/aelm.202000439,
[Article]

Item Type: Article
Erschienen: 2020
Creators: Petzold, Stefan and Piros, Eszter and Eilhardt, Robert and Zintler, Alexander and Vogel, Tobias and Kaiser, Nico and Radetinac, Aldin and Komissinskiy, Philipp and Jalaguir, Eric and Nolot, Emmanuel and Charpin-Nicolle, Christelle and Wenger, Christian and Molina-Luna, Leopoldo and Miranda, Enrique and Alff, Lambert
Title: Tailoring the Switching Dynamics in Yttrium Oxide-Based RRAM Devices by Oxygen Engineering: From Digital to Multi-Level Quantization toward Analog Switching
Language: English
Journal or Publication Title: Advanced Electronic Materials
Journal volume: 2020
Publisher: Wiley
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Advanced Electron Microscopy (aem)
11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
Date Deposited: 11 Sep 2020 07:09
DOI: 10.1002/aelm.202000439
Official URL: https://onlinelibrary.wiley.com/doi/full/10.1002/aelm.202000...
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