TU Darmstadt / ULB / TUbiblio

Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching

Petzold, Stefan and Piros, Eszter and Eilhardt, Robert and Zintler, Alexander and Vogel, Tobias and Kaiser, Nico and Radetinac, Aldin and Komissinskiy, Philipp and Jalaguier, Eric and Nolot, Emmanuel and Charpin‐Nicolle, Christelle and Wenger, Christian and Molina‐Luna, Leopoldo and Miranda, Enrique and Alff, Lambert (2020):
Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching.
In: Advanced Electronic Materials, 6 (11), p. 2000439. Wiley, ISSN 2199-160X,
DOI: 10.1002/aelm.202000439,
[Article]

Abstract

This work investigates the transition from digital to gradual or analog resistive switching in yttrium oxide-based resistive random-access memory devices. It is shown that this transition is determined by the amount of oxygen in the functional layer. A homogeneous reduction of the oxygen content not only reduces the electroforming voltage, allowing for forming-free devices, but also decreases the voltage operation window of switching, thereby reducing intra-device variability. The most important effect as the dielectric becomes substoichiometric by oxygen engineering is that more intermediate (quantized) conduction states are accessible. A key factor for this reproducibly controllable behavior is the reduced local heat dissipation in the filament region due to the increased thermal conductivity of the oxygen depleted layer. The improved accessibility of quantized resistance states results in a semi-gradual switching both for the set and reset processes, as strongly desired for multi-bit storage and for an accurate definition of the synaptic weights in neuromorphic systems. A theoretical model based on the physics of mesoscopic structures describing current transport through a nano-constriction including asymmetric potential drops at the electrodes and non-linear conductance quantization is provided. The results contribute to a deeper understanding on how to tailor materials properties for novel memristive functionalities.

Item Type: Article
Erschienen: 2020
Creators: Petzold, Stefan and Piros, Eszter and Eilhardt, Robert and Zintler, Alexander and Vogel, Tobias and Kaiser, Nico and Radetinac, Aldin and Komissinskiy, Philipp and Jalaguier, Eric and Nolot, Emmanuel and Charpin‐Nicolle, Christelle and Wenger, Christian and Molina‐Luna, Leopoldo and Miranda, Enrique and Alff, Lambert
Title: Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching
Language: English
Abstract:

This work investigates the transition from digital to gradual or analog resistive switching in yttrium oxide-based resistive random-access memory devices. It is shown that this transition is determined by the amount of oxygen in the functional layer. A homogeneous reduction of the oxygen content not only reduces the electroforming voltage, allowing for forming-free devices, but also decreases the voltage operation window of switching, thereby reducing intra-device variability. The most important effect as the dielectric becomes substoichiometric by oxygen engineering is that more intermediate (quantized) conduction states are accessible. A key factor for this reproducibly controllable behavior is the reduced local heat dissipation in the filament region due to the increased thermal conductivity of the oxygen depleted layer. The improved accessibility of quantized resistance states results in a semi-gradual switching both for the set and reset processes, as strongly desired for multi-bit storage and for an accurate definition of the synaptic weights in neuromorphic systems. A theoretical model based on the physics of mesoscopic structures describing current transport through a nano-constriction including asymmetric potential drops at the electrodes and non-linear conductance quantization is provided. The results contribute to a deeper understanding on how to tailor materials properties for novel memristive functionalities.

Journal or Publication Title: Advanced Electronic Materials
Journal volume: 6
Number: 11
Publisher: Wiley
Uncontrolled Keywords: Analog, conductance quantization, gradual, neuromorphic, oxygen engineering, resistive switching memory, yttria, yttrium oxide
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Advanced Electron Microscopy (aem)
11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
Date Deposited: 20 Nov 2020 11:44
DOI: 10.1002/aelm.202000439
Official URL: https://onlinelibrary.wiley.com/doi/10.1002/aelm.202000439
Projects: Electronic Components and Systems for European Leadership Joint Undertaking, European Union (EU), Auvergne-Rhone Alpes Region, Federal Ministry of Education & Research (BMBF), Grant number 16ESE0298, Deutscher Akademischer Austausch Dienst (DAAD), German Research Foundation (DFG), Grant number AL 560/13-2, German Research Foundation (DFG), Grant number 384682067; MO 3010/3-1; AL 560/21-1, European Research Council (ERC), Grant number 805359-FOXON, Ministerio de Ciencia, Innovacion y Universidades, Spain, Grant number TEC2017-84321-C4-4-R PCI2018-093107, WAKeMeUP project, Projekt DEAL, Grant number 783176
Export:
Suche nach Titel in: TUfind oder in Google
Send an inquiry Send an inquiry

Options (only for editors)
Show editorial Details Show editorial Details