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Role of oxygen defects in forming conductive filaments in Y2O3-based analog RRAM devices as revealed by fluctuation spectroscopy

Piros, Eszter and Lonsky, Martin and Petzold, Martin and Zintler, Alexander and Sharath, S.U. and Vogel, Tobias and Kaiser, Nico and Eilhardt, Robert and Molina-Luna, Leopoldo and Wenger, Christian and Müller, Jens and Alff, Lambert (2020):
Role of oxygen defects in forming conductive filaments in Y2O3-based analog RRAM devices as revealed by fluctuation spectroscopy.
In: Physical Review Applied, APS Publishing, ISSN 2331-7019,
[Article]

Item Type: Article
Erschienen: 2020
Creators: Piros, Eszter and Lonsky, Martin and Petzold, Martin and Zintler, Alexander and Sharath, S.U. and Vogel, Tobias and Kaiser, Nico and Eilhardt, Robert and Molina-Luna, Leopoldo and Wenger, Christian and Müller, Jens and Alff, Lambert
Title: Role of oxygen defects in forming conductive filaments in Y2O3-based analog RRAM devices as revealed by fluctuation spectroscopy
Language: English
Journal or Publication Title: Physical Review Applied
Publisher: APS Publishing
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Advanced Electron Microscopy (aem)
11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
Date Deposited: 20 May 2020 07:03
Official URL: https://journals.aps.org/prapplied/accepted/86072YacA411cc69...
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