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Number of items: 6.

Petzold, Stefan and Piros, Eszter and Eilhardt, Robert and Zintler, Alexander and Vogel, Tobias and Kaiser, Nico and Radetinac, Aldin and Komissinskiy, Philipp and Jalaguier, Eric and Nolot, Emmanuel and Charpin-Nicolle, Christelle and Wengerter, Christian and Molina-Luna, Leopoldo and Miranda, Enrique and Alff, Lambert (2020):
Neuromorphic Computing: Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching.
In: Advanced Electronic Materials, 6 (11), p. 2070044. Wiley, ISSN 2199160X,
DOI: 10.1002/aelm.202070044,
[Article]

Piros, Eszter and Lonsky, Martin and Petzold, Stefan and Zintler, Alexander and Sharath, S.U. and Vogel, Tobias and Kaiser, Nico and Eilhardt, Robert and Molina-Luna, Leopoldo and Wenger, Christian and Müller, Jens and Alff, Lambert (2020):
Role of Oxygen Defects in Conductive-Filament Formation in Y2O3 -Based Analog RRAM Devices as Revealed by Fluctuation Spectroscopy.
In: Physical Review Applied, 14 (3), pp. 034029. American Physical Society, ISSN 2331-7019,
DOI: 10.1103/PhysRevApplied.14.034029,
[Article]

Petzold, Stefan and Piros, Eszter and Eilhardt, Robert and Zintler, Alexander and Vogel, Tobias and Kaiser, Nico and Radetinac, Aldin and Komissinskiy, Philipp and Jalaguir, Eric and Nolot, Emmanuel and Charpin-Nicolle, Christelle and Wenger, Christian and Molina-Luna, Leopoldo and Miranda, Enrique and Alff, Lambert (2020):
Tailoring the Switching Dynamics in Yttrium Oxide-Based RRAM Devices by Oxygen Engineering: From Digital to Multi-Level Quantization toward Analog Switching.
In: Advanced Electronic Materials, 2020, Wiley, ISSN 2199160X,
DOI: 10.1002/aelm.202000439,
[Article]

Petzold, Stefan and Piros, Eszter and Eilhardt, Robert and Zintler, Alexander and Vogel, Tobias and Kaiser, Nico and Radetinac, Aldin and Komissinskiy, Philipp and Jalaguier, Eric and Nolot, Emmanuel and Charpin‐Nicolle, Christelle and Wenger, Christian and Molina‐Luna, Leopoldo and Miranda, Enrique and Alff, Lambert (2020):
Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching.
In: Advanced Electronic Materials, 6 (11), p. 2000439. Wiley, ISSN 2199-160X,
DOI: 10.1002/aelm.202000439,
[Article]

Piros, Eszter and Petzold, Stefan and Zintler, Alexander and Kaiser, Nico and Vogel, Tobias and Eilhardt, Robert and Wenger, Christian and Molina-Luna, Leopoldo and Alff, Lambert (2020):
Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier.
In: Applied Physics Letters, 117 (1), pp. 013504. American Institute of Physics, ISSN 0003-6951,
DOI: 10.1063/5.0009645,
[Article]

Piros, Eszter and Lonsky, Martin and Petzold, Martin and Zintler, Alexander and Sharath, S.U. and Vogel, Tobias and Kaiser, Nico and Eilhardt, Robert and Molina-Luna, Leopoldo and Wenger, Christian and Müller, Jens and Alff, Lambert (2020):
Role of oxygen defects in forming conductive filaments in Y2O3-based analog RRAM devices as revealed by fluctuation spectroscopy.
In: Physical Review Applied, APS Publishing, ISSN 2331-7019,
[Article]

This list was generated on Sat Dec 5 01:01:15 2020 CET.