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Analysis and simulation of the multiple resistive switching modes occurring in HfOx-based resistive random access memories using memdiodes

Petzold, S. and Miranda, E. and Sharath, S.U. and Munos-Gorriz, J. and Vogel, T. and Piros, E. and Kaiser, N. and Eilhardt, Robert and Zintler, Alexander and Molina-Luna, Leopoldo and Sune, J. and Alff, Lambert (2019):
Analysis and simulation of the multiple resistive switching modes occurring in HfOx-based resistive random access memories using memdiodes.
In: Journal of Applied Physics, p. 234503, (125), ISSN 00218979,
DOI: 10.1063/1.5094864,
[Article]

Item Type: Article
Erschienen: 2019
Creators: Petzold, S. and Miranda, E. and Sharath, S.U. and Munos-Gorriz, J. and Vogel, T. and Piros, E. and Kaiser, N. and Eilhardt, Robert and Zintler, Alexander and Molina-Luna, Leopoldo and Sune, J. and Alff, Lambert
Title: Analysis and simulation of the multiple resistive switching modes occurring in HfOx-based resistive random access memories using memdiodes
Language: English
Journal or Publication Title: Journal of Applied Physics
Number: 125
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Advanced Electron Microscopy (aem)
Date Deposited: 26 Jun 2019 05:26
DOI: 10.1063/1.5094864
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