Browse by Person
![]() | Up a level |
Ensinger, W. ; Lensch, O. ; Sittner, F. ; Knecht, J. ; Volz, K. ; Matsutani, T. ; Kiuchi, M. (2003):
Argon versus nitrogen ion beam assisted deposition of amorphous carbon and carbon–nitrogen films on aluminum for protection against aqueous corrosion.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 206, pp. 334-338. Elsevier, ISSN 0168583X,
[Article]
Ensinger, W. ; Lensch, O. ; Knecht, J. ; Volz, K. ; Matsutani, T. ; Kiuchi, M. (2002):
Pitting corrosion of aluminum coated by ion beam assisted deposition of carbon with argon ions at different ion-to-atom arrival ratios.
In: Surface and Coatings Technology, 158-159, pp. 594-598. Elsevier, ISSN 0257-8972,
[Article]
Volz, K. ; Ensinger, W. (2002):
Growth of the carbide, nitride and oxide of silicon by plasma immersion ion implantation.
In: Surface and Coatings Technology, 156 (1-3), pp. 237-243. Elsevier, ISSN 02578972,
[Article]
Ensinger, W. ; Volz, K. ; Galonska, M. ; Gabor, Ch. ; Klein, H. (2002):
The multi-aperture hollow target: a method for determining ion incidence angles in plasma immersion ion implantation.
In: Surface & coatings technology, 156 (1-3), pp. 92-96. ISSN 0257-8972,
[Article]
Galonska, M. ; Gabor, Ch. ; Thomae, R. W. ; Klein, H. ; Volz, K. ; Ensinger, W. (2001):
Determination of ion incidence angles in plasma immersion ion implantation by means of a hollow multi-aperture target.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, (175-177), pp. 658-662. ISSN 0168-583X,
[Article]
Volz, K. ; Klatt, Ch. ; Ensinger, W. (2001):
Heteroepitaxial SiC films grown in Si by CH4 plasma immersion ion implantation: Conditions and mechanisms of their formation.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, (175-177), pp. 569-574. ISSN 0168-583X,
[Article]
Lensch, O. ; Volz, K. ; Kiuchi, M. ; Ensinger, W. (2001):
Pitting corrosion of aluminium coated with amorphous carbon films by argon ion beam assisted deposition at low process temperature.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, (175-177), pp. 575-579. ISSN 0168-583X,
[Article]
Ensinger, W. ; Volz, K. ; Enders, B. (2001):
Inner wall coating of cylinders by plasma immersion ion implantation for corrosion protection.
In: Surface & coatings technology, 136 (1-3), pp. 202-206. ISSN 0257-8972,
[Article]
Volz, K. ; Baba, K. ; Hatada, R. ; Ensinger, W. (2001):
Silicon carbide and amorphous carbon film formation by plasma immersion ion implantation: a comparison of methane and toluene as plasma forming gases.
In: Surface & coatings technology, 136 (1-3), pp. 197-201. ISSN 0257-8972,
[Article]
Volz, K. ; Hasse, A. ; Ensinger, W. (2001):
Studies on treatment homogeneity of plasma immersion ion implantation by an optical method.
In: Surface and Coatings Technology, 136 (1-3), pp. 80-84. Elsevier, ISSN 02578972,
[Article]
Volz, K. ; Schreiber, S. ; Gerlach, J. W. ; Reiber, W. ; Rauschenbach, B. ; Stritzker, B. ; Assmann, W. ; Ensinger, W. (2000):
Heteroepitaxial growth of 3C-SiC on (100) silicon by C60 and Si molecular beam epitaxy.
In: Materials Science and Engineering: A, 289 (1-2), pp. 255-264. Elsevier, ISSN 09215093,
[Article]
Volz, K. ; Kiuchi, M. ; Okumura, M. ; Ensinger, W. (2000):
C–SiC–Si gradient films formed on silicon by ion beam assisted deposition at room temperature.
In: Surface and Coatings Technology, (128-129), pp. 274-279. Elsevier, ISSN 02578972,
[Article]
Ensinger, W. ; Volz, K. ; Kiuchi, M. (2000):
Ion beam-assisted deposition of nitrides of the 4th group of transition metals.
In: Surface and Coatings Technology, (128-129), pp. 81-84. Elsevier, ISSN 02578972,
[Article]
Ensinger, Wolfgang ; Volz, K. (2000):
Ion-beam assisted coating of tube inner walls by plasma immersion ion implantation.
In: Surface and Coatings Technology, (128-129), pp. 270-273. Elsevier, ISSN 02578972,
[Article]
Volz, K. ; Enders, B. ; Ensinger, W. (2000):
Nitrogen plasma immersion ion implantation and silicon sputter deposition combined with methane implantation as an in-line process for improving corrosion and wear performance of stainless steels.
In: Surface and Coatings Technology, (128-129), pp. 479-483. Elsevier, ISSN 02578972,
[Article]
Ensinger, Wolfgang ; Volz, K. ; Höchbauer, T. (2000):
Plasma immersion ion implantation of complex-shaped objects: an experimental study on the treatment homogeneity.
In: Surface and Coatings Technology, (128-129), pp. 265-269. Elsevier, ISSN 02578972,
[Article]
Volz, K. ; Kiuchi, M. ; Ensinger, W. (2000):
Tantalum nitride films formed by ion beam assisted deposition: analysis of the structure in dependence on the ion irradiation intensity.
In: Surface and Coatings Technology, (128-129), pp. 298-302. Elsevier, ISSN 02578972,
[Article]
Volz, K. ; Rauschenbach, B. ; Klatt, C. ; Ensinger, W. (2000):
Ammonia plasma immersion ion implantation into silicon: Composition and structure of the resulting silicon–nitrogen–hydrogen system.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, (166-167), pp. 75-81. ISSN 0168583X,
[Article]
Ensinger, W. ; Volz, K. (2000):
Thin film oxides as probe for homogeneity measurements of 3-dimensional objects treated by plasma immersion ion implantation.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, (166-167), pp. 154-158. Elsevier, ISSN 0168583X,
[Article]
Volz, K. ; Klatt, Ch. ; Ensinger, Wolfgang (2000):
Composition and structure of SiCx:H Films Formed by Plasma Immersion Ion Implantation from a Methane Plasma.
In: Mat. Res. Soc. Symp. Proc. 609, p. 271. [Article]