TU Darmstadt / ULB / TUbiblio

Browse by Person

Up a level
Export as [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Group by: No Grouping | Item Type | Date | Language
Number of items: 4.

Toulemonde, M. ; Assmann, W. ; Muller, D. ; Trautmann, C. (2017):
Electronic sputtering of LiF, CaF 2 , LaF 3 and UF 4 with 197 MeV Au ions. Is the stoichiometry of atom emission preserved?
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 406, pp. 501-506. Elsevier Science Publishing, ISSN 0168583X,
DOI: 10.1016/j.nimb.2016.11.034,
[Article]

Assmann, W. ; Ban-d'Etat, B. ; Bender, M. ; Boduch, P. ; Grande, P. L. ; Lebius, H. ; Lelièvre, D. ; Marmitt, G. G. ; Rothard, H. ; Seidl, T. ; Severin, D. ; Voss, K.-O. ; Toulemonde, M. ; Trautmann, C. (2017):
Charge-state related effects in sputtering of LiF by swift heavy ions.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 392, pp. 94-101. Elsevier Science Publishing, ISSN 0168583X,
DOI: 10.1016/j.nimb.2016.12.013,
[Article]

Toulemonde, M. ; Assmann, W. ; Trautmann, C. (2016):
Electronic sputtering of vitreous SiO2: Experimental and modeling results.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 379, pp. 2-8. Elsevier Science Publishing, ISSN 0168583X,
DOI: 10.1016/j.nimb.2016.03.023,
[Article]

Volz, K. ; Schreiber, S. ; Gerlach, J. W. ; Reiber, W. ; Rauschenbach, B. ; Stritzker, B. ; Assmann, W. ; Ensinger, W. (2000):
Heteroepitaxial growth of 3C-SiC on (100) silicon by C60 and Si molecular beam epitaxy.
In: Materials Science and Engineering: A, 289 (1-2), pp. 255-264. Elsevier, ISSN 09215093,
[Article]

This list was generated on Tue Jan 25 02:42:16 2022 CET.