Volz, K. ; Schreiber, S. ; Gerlach, J. W. ; Reiber, W. ; Rauschenbach, B. ; Stritzker, B. ; Assmann, W. ; Ensinger, W. (2000)
Heteroepitaxial growth of 3C-SiC on (100) silicon by C60 and Si molecular beam epitaxy.
In: Materials Science and Engineering: A, 289 (1-2)
doi: 10.1016/S0921-5093(00)00825-X
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Volz, K. ; Rauschenbach, B. ; Klatt, C. ; Ensinger, W. (2000)
Ammonia plasma immersion ion implantation into silicon: Composition and structure of the resulting silicon–nitrogen–hydrogen system.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, (166-167)
doi: 10.1016/S0168-583X(99)00866-6
Artikel, Bibliographie