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Volz, K. and Schreiber, S. and Gerlach, J. W. and Reiber, W. and Rauschenbach, B. and Stritzker, B. and Assmann, W. and Ensinger, W. (2000):
Heteroepitaxial growth of 3C-SiC on (100) silicon by C60 and Si molecular beam epitaxy.
In: Materials Science and Engineering: A, Elsevier, pp. 255-264, 289, (1-2), ISSN 09215093,
[Online-Edition: http://dx.doi.org/10.1016/S0921-5093(00)00825-X],

Volz, K. and Rauschenbach, B. and Klatt, C. and Ensinger, W. (2000):
Ammonia plasma immersion ion implantation into silicon: Composition and structure of the resulting silicon–nitrogen–hydrogen system.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, pp. 75-81, (166-167), ISSN 0168583X,
[Online-Edition: http://dx.doi.org/10.1016/S0168-583X(99)00866-6],

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