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Volz, K. and Klatt, Ch. and Ensinger, W. (2001):
Heteroepitaxial SiC films grown in Si by CH4 plasma immersion ion implantation: Conditions and mechanisms of their formation.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, pp. 569-574, (175-177), ISSN 0168-583X,
[Online-Edition: http://dx.doi.org/10.1016/S0168-583X(00)00629-7],

Volz, K. and Klatt, Ch. and Ensinger, Wolfgang (2000):
Composition and structure of SiCx:H Films Formed by Plasma Immersion Ion Implantation from a Methane Plasma.
In: Mat. Res. Soc. Symp. Proc. 609, p. 271, [Article]

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