TU Darmstadt / ULB / TUbiblio

Browse by Person

Up a level
Export as [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Group by: No Grouping | Item Type | Date | Language
Jump to: 2003 | 2002 | 2001 | 2000
Number of items: 20.

2003

Ensinger, W. ; Lensch, O. ; Sittner, F. ; Knecht, J. ; Volz, K. ; Matsutani, T. ; Kiuchi, M. (2003)
Argon versus nitrogen ion beam assisted deposition of amorphous carbon and carbon–nitrogen films on aluminum for protection against aqueous corrosion.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 206
doi: 10.1016/S0168-583X(03)00757-2
Article, Bibliographie

2002

Ensinger, W. ; Lensch, O. ; Knecht, J. ; Volz, K. ; Matsutani, T. ; Kiuchi, M. (2002)
Pitting corrosion of aluminum coated by ion beam assisted deposition of carbon with argon ions at different ion-to-atom arrival ratios.
In: Surface and Coatings Technology, 158-159
doi: 10.1016/S0257-8972(02)00315-8
Article, Bibliographie

Volz, K. ; Ensinger, W. (2002)
Growth of the carbide, nitride and oxide of silicon by plasma immersion ion implantation.
In: Surface and Coatings Technology, 156 (1-3)
doi: 10.1016/S0257-8972(02)00098-1
Article, Bibliographie

Ensinger, W. ; Volz, K. ; Galonska, M. ; Gabor, Ch. ; Klein, H. (2002)
The multi-aperture hollow target: a method for determining ion incidence angles in plasma immersion ion implantation.
In: Surface & coatings technology, 156 (1-3)
doi: 10.1016/S0257-8972(02)00129-9
Article, Bibliographie

2001

Galonska, M. ; Gabor, Ch. ; Thomae, R. W. ; Klein, H. ; Volz, K. ; Ensinger, W. (2001)
Determination of ion incidence angles in plasma immersion ion implantation by means of a hollow multi-aperture target.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, (175-177)
doi: 10.1016/S0168-583X(00)00653-4
Article, Bibliographie

Volz, K. ; Klatt, Ch. ; Ensinger, W. (2001)
Heteroepitaxial SiC films grown in Si by CH4 plasma immersion ion implantation: Conditions and mechanisms of their formation.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, (175-177)
doi: 10.1016/S0168-583X(00)00629-7
Article, Bibliographie

Lensch, O. ; Volz, K. ; Kiuchi, M. ; Ensinger, W. (2001)
Pitting corrosion of aluminium coated with amorphous carbon films by argon ion beam assisted deposition at low process temperature.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, (175-177)
doi: 10.1016/S0168-583X(00)00649-2
Article, Bibliographie

Ensinger, W. ; Volz, K. ; Enders, B. (2001)
Inner wall coating of cylinders by plasma immersion ion implantation for corrosion protection.
In: Surface & coatings technology, 136 (1-3)
doi: 10.1016/S0257-8972(00)01056-2
Article, Bibliographie

Volz, K. ; Baba, K. ; Hatada, R. ; Ensinger, W. (2001)
Silicon carbide and amorphous carbon film formation by plasma immersion ion implantation: a comparison of methane and toluene as plasma forming gases.
In: Surface & coatings technology, 136 (1-3)
doi: 10.1016/S0257-8972(00)01055-0
Article, Bibliographie

Volz, K. ; Hasse, A. ; Ensinger, W. (2001)
Studies on treatment homogeneity of plasma immersion ion implantation by an optical method.
In: Surface and Coatings Technology, 136 (1-3)
doi: 10.1016/S0257-8972(00)01016-1
Article, Bibliographie

2000

Volz, K. ; Schreiber, S. ; Gerlach, J. W. ; Reiber, W. ; Rauschenbach, B. ; Stritzker, B. ; Assmann, W. ; Ensinger, W. (2000)
Heteroepitaxial growth of 3C-SiC on (100) silicon by C60 and Si molecular beam epitaxy.
In: Materials Science and Engineering: A, 289 (1-2)
doi: 10.1016/S0921-5093(00)00825-X
Article, Bibliographie

Volz, K. ; Kiuchi, M. ; Okumura, M. ; Ensinger, W. (2000)
C–SiC–Si gradient films formed on silicon by ion beam assisted deposition at room temperature.
In: Surface and Coatings Technology, (128-129)
doi: 10.1016/S0257-8972(00)00604-6
Article, Bibliographie

Ensinger, W. ; Volz, K. ; Kiuchi, M. (2000)
Ion beam-assisted deposition of nitrides of the 4th group of transition metals.
In: Surface and Coatings Technology, (128-129)
doi: 10.1016/S0257-8972(00)00662-9
Article, Bibliographie

Ensinger, Wolfgang ; Volz, K. (2000)
Ion-beam assisted coating of tube inner walls by plasma immersion ion implantation.
In: Surface and Coatings Technology, (128-129)
doi: 10.1016/S0257-8972(00)00603-4
Article, Bibliographie

Volz, K. ; Enders, B. ; Ensinger, W. (2000)
Nitrogen plasma immersion ion implantation and silicon sputter deposition combined with methane implantation as an in-line process for improving corrosion and wear performance of stainless steels.
In: Surface and Coatings Technology, (128-129)
doi: 10.1016/S0257-8972(00)00624-1
Article, Bibliographie

Ensinger, Wolfgang ; Volz, K. ; Höchbauer, T. (2000)
Plasma immersion ion implantation of complex-shaped objects: an experimental study on the treatment homogeneity.
In: Surface and Coatings Technology, (128-129)
doi: 10.1016/S0257-8972(00)00601-0
Article, Bibliographie

Volz, K. ; Kiuchi, M. ; Ensinger, W. (2000)
Tantalum nitride films formed by ion beam assisted deposition: analysis of the structure in dependence on the ion irradiation intensity.
In: Surface and Coatings Technology, (128-129)
doi: 10.1016/S0257-8972(00)00583-1
Article, Bibliographie

Volz, K. ; Rauschenbach, B. ; Klatt, C. ; Ensinger, W. (2000)
Ammonia plasma immersion ion implantation into silicon: Composition and structure of the resulting silicon–nitrogen–hydrogen system.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, (166-167)
doi: 10.1016/S0168-583X(99)00866-6
Article, Bibliographie

Ensinger, W. ; Volz, K. (2000)
Thin film oxides as probe for homogeneity measurements of 3-dimensional objects treated by plasma immersion ion implantation.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, (166-167)
doi: 10.1016/S0168-583X(99)00739-9
Article, Bibliographie

Volz, K. ; Klatt, Ch. ; Ensinger, Wolfgang (2000)
Composition and structure of SiCx:H Films Formed by Plasma Immersion Ion Implantation from a Methane Plasma.
In: Mat. Res. Soc. Symp. Proc. 609
Article, Bibliographie

This list was generated on Tue Jun 18 01:51:20 2024 CEST.